BC337 40 Search Results

BC337 figure

Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC337

Abstract: bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc

BC337 figure

Abstract: BC337 BC337 NPN transistor datasheet BC338
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

Contextual Info: Pro Electron Series /% JkJ » \ / w Sem iconductor'" V D e v ice C ase No. S ty le BC327 BC327A BC327-16 BC327-25 2-66 BC328 BC328-25 BC337 BC337A BC337-16 BC337-25 BC338 BC368 D iscrete POWER & Signal Technologies National TO-92 97 TO-92 (97) TO-92 (97)

BC337

Abstract: BC337 B 011
Contextual Info: MCC Micro Commercial Components Features • • • Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) • Case Material: Molded Plastic. Classification Rating 94V-0 BC337-16/25/40

bc337 transistor datasheet

Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338
Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage

C 337-25

Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
Contextual Info: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

BC337

Abstract: bc337 fairchild BC338
Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC338C

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

BC337 pnp transistor

Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC

Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage

BC327

Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25

BC337

Abstract: BC337 pnp transistor pin configuration Bc337 PNP TRANSISTOR bc338 npn bc338 signal transistor BC337 NPN transistor datasheet bc337 transistor datasheet pin configuration Bc327 BC327 BC328
Contextual Info: BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-226AA (TO-92) Features • NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages.

bc337-40 npn transistor

Abstract: BC337 8H721 bc337a BC338-16 NPN bc338 TRANSISTOR BC337-25 PNP transistor bc337 npn NPN TRANSISTOR BC337 40 transistor BC337-16
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • General purpose switching and amplification,

bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Contextual Info: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C

OF TRANSISTOR BC337

Contextual Info: BC337 NPN EPITAXIAL PLANAR TRANSISTOR POWER SEMICONDUCTOR Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E A C Mechanical Data • • • • TO-92

2n185

Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434

BC33B

Abstract: BC413B BC413C bc414b BC414C NPN/BC33B BC36B BC447A BC337-25 BC337-40
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Type ^C BO No. (V) Min BC337-25 ’ CEO (V) Min 50 EBO (VI Win 45 Pd (W) 'c & (mA) 'C E S (A) (pA) @Tc=25°c @ (V ) M ax 0.625 0.5 0.1

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BC327 NPN transistor

Abstract: BC327 NPN transistor datasheet pin configuration Bc327 pin configuration PNP transistor BC327 BC328 st BC328 BC327 transistor BC327 BC337 BC338
Contextual Info: ST BC327…BC328 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC

BC170C

Abstract: BC170B "bc170c"
Contextual Info: 4 68 4 9 5 5 I T T SEMICONDUCTORS_ NPN TRANSISTORS a? de| 87D 02320 ¿7 - D 2 ^/ □ □ □5 3 e d 3 f mlsmtss NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura­

ISS400

Abstract: BC857BM3T5G BAS16XV2T1 MPSA42 168 BC237 MMBT2907AM3T5G BC856BM3T5G BC847BPDW1T1 Series 2n3904 409 BC847CPDW1T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1681 Small−Signal Device Index Device Number Page Device Number Page BAS20LT1 2N3819 43, 53 BAS21DW5T1 2N3903 59 BAS21HT1 49, 174 2N3904 25, 35, 59 BAS21LT1 48, 168, 176 BC213 272 2N3906 25, 35, 65 BAS21SLT1 48, 178 BC237