BC167 Search Results

BC169C

Abstract: BC168 BC168A BC168C BC167 BC167A BC167B BC168B BC169 BC169B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

bc169

Abstract: BC168 BC167 BC169 TRANSISTOR BC167B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

BC519

Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC5471

Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
Contextual Info: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N

2N2648

Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

BC238 h parameter

Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

bc177

Abstract: BC257
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

bc107bp

Abstract: 2N3247 2N304 BC560 MOTOROLA JC501P ZTX237 BC330 LOW-POWER SILICON NPN BC107B, MOTOROLA BC237B5
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

BC257

Abstract: BC307 BC107 BC307 micro electronics bci77 BC177 BC178 BC179 BC237 BC258
Contextual Info: BC 177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 / o o er o LU LU THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC167, 8, 9

BC257

Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

BC174

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless O therw ise Specified) M axim um Ratings Type Pd (W) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD786S 50 40 5 0.25 0.3 BC167 50 45 6 0.3 0.1 No. BC167A BC167B BC16S BC168A B (1 6 8 B

BC169C transistors

Abstract: BC169 BC169C BC168B BC167B BC167A BC168 BC168C BC169B BC169C equivalent
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.

BC167

Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

C184L

Abstract: BC184LC
Contextual Info: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)

transistor BC137

Abstract: BC137 RE5RE50 24516 bc107 connections bc136 VP1127 transistor bc102 vp251 M37274EFSP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

2SD468C

Abstract: 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786 2SD261 2SD468
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vcbo (V) Min V C E0 ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°t @ lc & (mA) 'cBO V CB 'c e s v ce (UA) Max § (V) (UA) Max 0 (V )

Contextual Info: CSD17507Q5A SLPS243E – JULY 2010 – REVISED JULY 2011 www.ti.com 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17507Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

Contextual Info: CSD17510Q5A SLPS271F – JULY 2010 – REVISED OCTOBER 2011 www.ti.com 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

Contextual Info: CSD17302Q5A www.ti.com SLPS216A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17302Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance