BC 557 Search Results

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

TRANSISTOR C 557 B

Abstract: transistor B 560 transistor c 557 TRANSISTOR BC 560 transistor c 558 transistor bc 557 c le B 557 PNP TRANSISTOR TRANSISTOR BC 553 transistor 557 b BC557
Contextual Info: BC 556 *BC 557 BC 558 BC 559, BC560 PNP SIL IC O N T R A N SIS T O R T R A N S IS T O R P N P S IL IC IU M Compì, of BC 546 at BC 550 % Preferred device D isp o sitif recomm andé General purpose BC 556/BC 557/BC 558 Usage général BC 556/BC 557/BC 558 —65 V

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

BC 247 b transistor

Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
Contextual Info: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in

transistor BC 667

Abstract: transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247
Contextual Info: - asc î • öE35bG5 o o o m ^ b a « s i e û - D PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 SIEMENS AKTIEN6ESELLSCHAF- f"-2$ - 2./ ' for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
Contextual Info: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

equivalent transistor 8550

Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

ic 558

Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
Contextual Info: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

bc557

Abstract: BC557A BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC556 BC557C BC558B
Contextual Info: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45

BC557A

Abstract: BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B
Contextual Info: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45

BC557A

Abstract: BC556B BC558B transistor BC 557B BC556 BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA
Contextual Info: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45

transistor BC 557B

Abstract: BC557A BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557
Contextual Info: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

BC557

Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
Contextual Info: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C

Contextual Info: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,

BC5578

Abstract: BC556-558 BC556 BC557 BC558 T1 BC558
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B BC 557, 8, A, B, C TO-92 EBC Boca Semiconductor Corp.

Contextual Info: BC 556 . BC 559 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

BC 547 data base

Abstract: BC 548C
Contextual Info: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

transistors BC 557C

Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
Contextual Info: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0