337A1 Search Results

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

100FXFG13

Abstract: 100FXFH13
Contextual Info: TOSHIBA 10OFXFG 13,1 OOFXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 3300V Average Forward Current ÏF AV = 1(>0a Reverse Recovery Time (Tj = 25°C) tj»j»—3.1/¿s

TOSHIBA RECTIFIER

Contextual Info: TOSHIBA 200FXG13f200FXH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 2QQFXG13, 2QQFXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage : V r r ]V[ = 3000V a » n ♦ x jj•^ • Reverse Recovery Time Tj = 25°C

Contextual Info: TOSHIBA 200FXG13,200FXH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C VRRM = 3000 V

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

337A1

Abstract: 12v 100 amp battery load flame arrestor 337A1 battery charger electrochemical gas sensors datasheet slc series 5 12 volt lead acid battery construction 40797 valve regulated battery charger IR-30EC
Contextual Info: IR-30EC and IR-40EC Series I Batteries KS-23815 Product Manual Select Code 157-622-020 Comcode 107078859 Issue 10 January 2008 Product Manual KS-23815 Select Code 157-622-020 Comcode 107078859 Issue 10 January 2008 IR-30EC and IR-40EC Series I Batteries Notice:

200FXH13

Abstract: 200FXG13
Contextual Info: TOSHIBA 200FXG13#200FXH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage VRRM = 3000V Average Forward Current ÏF A V V O C A Reverse Recovery Time (Tj = 25°C tj»j»—4.5 jus

100FXFG13

Contextual Info: TO SH IB A 100FXFG13,100FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1nnFYFGi3 1nnpypHiq •v w ■ w m. m ' w ■v g m ^ur w ■ ^ m ■ ■ ■ ■ w Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage «» n v ±-

TOSHIBA RECTIFIER

Contextual Info: TOSHIBA 100FXFG13J00FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C Vr r m = 3300V

Contextual Info: TOSHIBA 200FXG13#200FXH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 3 — 0 6.4 ± 0.5 • • • Repetitive Peak Reverse Voltage VRRM = 3000V Average Forward Current ÏF AV —200A

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

Contextual Info: TOSHIBA 100FXFG13J00FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time Tj = 25°C Vr r m = 3300V