BC 549 DIODE Search Results

BC649

Abstract: BC550 MOTOROLA bc649c BC549 BC550 bc549c BC549B bc550 noise figure VQE-10 BC549 NPN transistor
Contextual Info: MOTOROLA SC 1SE D I b3b?2S4 GOÛ5flbb T I XSTRS/R F T-M-Zl BC549, A, B, C BC550, A, B, C M A X IM U M RATINGS Sym bol R a tin g BC BC 549 550 CASE 29-04, STYLE 17 TO-92 TO-226AA U n it C ollector-E m itter Voltage V cE O 30 45 Vdc Colfector-B ase Voltage

BC549B

Abstract: transistor BC 549 TRANSISTOR BC 550 b bc550b
Contextual Info: BC549B,C BC550B,C M A X IM U M R A TIN G S R a tin g Sym bol BC 549 BC 550 U n it C o lle c to r-E m itte r V o ltag e VCEO 30 45 Vdc C o lle c to r-B a s e V o ltag e VCBO 30 E m itte r-B a s e V o ltag e VEBO 5 .0 Vdc C o lle c to r C u rre n t - C o n tin u o u s

C549B

Abstract: 549B c550b BC549B
Contextual Info: BC549B,C BC550B,C M A X IM U M R A T IN G S R a tin g Sym bol BC 549 BC 550 U n it C o H e c to r-E m itte r V o lta g e VCEO 30 45 Vdc C o lle c to r-B a s e V o lta g e VC BO 30 50 Vdc E m itte r-B a s e V o lta g e vebo 5 0 Vdc C o lle c to r C u rre n t - C o n tin u o u s

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

Transistor NPN BC 549B

Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
Contextual Info: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ

NR3470MU

Abstract: NX8560LJ vw 19320
Contextual Info: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560LJ LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR SERIES FOR 10 Gb/s DWDM APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560LJ Series are an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diodes. It is capable

bc 549 diode

Contextual Info: HL1341AC Laser Diode Description H L 1341A C is a 1.3 /um In G aA sP distributedfeedback D FB laser diode with buried h e te ro ­ stru ctu re. It is su itable as a light source in high-bit-rate, long-distance fiberoptic com m u n icatio n s and v ario u s o th e r types o f optical equipm ent.

10 gb laser diode

Abstract: upc 577 TLD 521 NX8560SJ electroabsorption
Contextual Info: PRELIMINARY DATA SHEET NEC's EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS NX8560SJ Series FEATURES DESCRIPTION • INTEGRATED ELECTRO-ABSORPTION MODULATOR NEC's NX8560SJ Series is an Electro-Absorption EA Modulator and wavelength monitor intergraded, 1550 nm Multiple

TLD 521

Abstract: IC UPC 354 TLD 721 upc 577 NX8567SA NX8567SAM NX8567SAS 2N 1564 19275
Contextual Info: NEC'S EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS NX8567SA Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8567SA Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple

7Pin Connector

Abstract: bc 541 transistor bc 557 datasheet NR3470MU NX8560LJ NX8560LJ-AZ
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS NX8560LJ SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • UP TO 40 km TRANSMISSION CAPABILITY WITH STANDARD SINGLE MODE FIBER

bc 303 transistor

Abstract: NX8564LE NX8566LE UL1581VW-1
Contextual Info: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption

BYD31

Abstract: BYD31D BYD31G BYD31J BYD31K BYD31M
Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bhSBTBl DOEbSbS TSb ■ APX Philips Sem iconductors Prelim inary specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD91 implosion diode ID glass

6V relay

Abstract: relay 6v relay pin out diagram DATA SHEET IC 4011 veroboard Futaba circuit radio control chloride ups circuit diagram FUTABA SERVO futaba servo motor futaba radio control circuit diagram
Contextual Info: Radio Control Electric Switch T his switch is quite simple but has some great features and worth a try. All of the parts are readily available from most electronics stores or if you tinker with electronics a bit you may have them in your junk box as odd spares.

bc 303 transistor

Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC

NR3470MU

Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
Contextual Info: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

thermistor 220

Contextual Info: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

NX8567SA

Abstract: NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8567SA Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 240 km, 360 km, 600 km APPLICATIONS DESCRIPTION The NX8567SA Series is an Electro-Absorption EA modulator and

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

54ABT125

Abstract: 54*125
Contextual Info: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers

54ABT125

Contextual Info: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers