NX8564LE Search Results

pd 223

Abstract: NX8564LE311-CC NX8564LE318-CC NX8564LE326-CC NX8564LE334-CC NX8564LE342-CC NX8564LE350-CC NX8564LE-CC
Contextual Info: DATA SHEET LASER DIODE NX8564LE-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km APPLICATIONS DESCRIPTION The NX8564LE-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW)

bc 303 transistor

Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC

NX8564LE311-CC

Abstract: NX8564LE318-CC NX8564LE326-CC NX8564LE334-CC NX8564LE342-CC NX8564LE350-CC NX8564LE358-CC NX8564LE366-CC NX8564LE-CC 160832
Contextual Info: EA MODULATOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE NX8564LE-CC FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8564LE-CC is an Electro-Absorption EA modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured

edfa rise time specifications

Abstract: NX8564LE311-CC NX8564LE318-CC NX8564LE326-CC NX8564LE334-CC NX8564LE342-CC NX8564LE350-CC NX8564LE-CC
Contextual Info: DATA SHEET LASER DIODE NX8564LE-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km APPLICATIONS DESCRIPTION The NX8564LE-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW)

NX8300CE-CC

Abstract: NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC NX8300BE-CC
Contextual Info: DATA SHEET LASER DIODE NX8504BE-CC,NX8504CE-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Gb/s DESCRIPTION The NX8504BE-CC and NX8504CE-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with an internal optical isolator.

NR3470MU

Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
Contextual Info: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

NX8303CG-CC

Abstract: NX8304BE-CC STM-16 NX8300BE-CC NX8300CE-CC NX8303BG-CC 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8300BE-CC,NX8300CE-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX8300BE-CC and NX8300CE-CC are 1 310 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with an internal optical isolator.

pd 223

Abstract: edfa rise time specifications NX8565LE541-CC NX8565LE311-CC NX8565LE318-CC NX8565LE326-CC NX8565LE334-CC NX8565LE342-CC NX8565LE350-CC NX8565LE-CC
Contextual Info: DATA SHEET LASER DIODE NX8565LE-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 600 km APPLICATIONS DESCRIPTION The NX8565LE-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW)

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back

STM-16

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8503BG-CC NX8504BE-CC NX8504CE-CC
Contextual Info: DATA SHEET LASER DIODE NX8504BE-CC,NX8504CE-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Gb/s DESCRIPTION The NX8504BE-CC and NX8504CE-CC are 1 310 nm Distributed Feed-Back DFB laser diode coaxial modules with an internal optical isolator. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single

NX8563LB

Abstract: NX8563LB279 NX8563LB287 NX8563LB295 NX8563LB303 NX8563LB311 NX8563LB318 NX8563LB326 continuous wave laser stm-16 C11159
Contextual Info: DATA SHEET LASER DIODE NX8563LB 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LB is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).

nec 3114

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8503BG-CC STM-16 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8300BE-CC,NX8300CE-CC 1 310 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX8300BE-CC and NX8300CE-CC are 1 310 nm Distributed Feed-Back DFB laser diode coaxial modules with an internal optical isolator. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8503BG-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC is a 1 550 nm Distributed Feed-Back DFB laser diode coaxial module with single mode fiber. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

l42 DIODE

Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

electroabsorption

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8503BG-CC NX8503CG-CC NX8560LJ-CC 10 gb laser diode
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560LJ-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode. It is capable of transmitting up to 40 km for 10 Gb/s applications

10 gb laser diode

Abstract: NX8560LJ NX8560MC NX8560MC-BC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC NX8560SJ stm 64 laser diode
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560MC Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560MC Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed

10 gb laser diode

Abstract: NX8566LE NX8560MC Series bfy 421
Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

NX8563LB

Abstract: NX8563LB279 NX8563LB287 NX8563LB295 NX8563LB303 NX8563LB311 NX8563LB318 NX8563LB326
Contextual Info: DATA SHEET LASER DIODE NX8563LB 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LB is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).

Contextual Info: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator

NX8560LJ

Abstract: NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE NX8566LE NX8567SA 10 gb laser diode bfy 40
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

10 gb laser diode

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

bc 303 transistor

Abstract: NX8564LE NX8566LE UL1581VW-1
Contextual Info: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption