BC 2001 TRANSISTOR Search Results

transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Contextual Info: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC546 "cross reference"

Abstract: transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference bc550 BC547ATA Amplifier with transistor BC549 bc549 of transistor BC 548
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

transistor bc 102

Abstract: TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC337 BC338 BC 170 transistor BC 2001 transistor
Contextual Info: HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-drlver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

transistor bc 102

Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

TRANSISTOR 237b

Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

100az

Abstract: BCW65A BCW66F BCW66G BCW66H BCW68F BCW68G BCW68H FMMTA05 FMMTA06
Contextual Info: SOT 23 TRANSISTORS NPN MEDIUM POWER RATINGS AND CHARACTERISTICS at 25°C ambient temperature. Type FM M TA06 V c es Volts VcEO Volts 80 80 lc mA 500 Ptot* mW 350 h FE VcE {sat min/max at Ic /V c e max at Ic /Ib m A/Volts Volts mA 5 0 /- 10/1 Noise Figure at

I3C327

Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com ­

bcx56

Abstract: BCX54 Bcx56-16
Contextual Info: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

bc487

Abstract: transistors BC 487 bc487b
Contextual Info: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous

marking B22 sot-23

Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
Contextual Info: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO

BCX56

Abstract: BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16
Contextual Info: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

BC253

Abstract: BC251 BC252 BC 251 BC256 transistor bc 102 BC309 BC307 BC308
Contextual Info: BC251 . . BC307 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC256 is available in groups A and B only. BC253 and BC309 are low noise types.

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

thermistor TH101

Abstract: pin diagram of ic 7493 240vac to 12vdc rectifier circuit AMPLIFIER U201 CR25 resistor 120vac to 12vdc schematic diagram 120v AC to 12V dc transformer CNY17-2Z CR102 zener diode DE C308
Contextual Info: Application Note AN 139 Designing Power Supplies Using Xicor’s XDCP Mixed Signal Products By Bill Slack Abstract I. The objective of this Application Note is to illustrate the use of a Xicor XDCP Digitally Controlled Potentiometer in the design of switching power supply. A

BC107 characteristic

Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109
Contextual Info: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type

BCX56

Abstract: BCX54 BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium power transistors Product specification Supersedes data of 1999 Apr 19 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56

BC173

Abstract: BC171 BC174 bc172 BC238 BC239 BC238 h parameter transistor bc171 transistor bc237 bc337 BC237
Contextual Info: BC171 . . BC237 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and

bc487

Abstract: bc487b
Contextual Info: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous