BC 2001 TRANSISTOR Search Results

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

TRANSISTOR 237b

Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

100az

Abstract: BCW65A BCW66F BCW66G BCW66H BCW68F BCW68G BCW68H FMMTA05 FMMTA06
Contextual Info: SOT 23 TRANSISTORS NPN MEDIUM POWER RATINGS AND CHARACTERISTICS at 25°C ambient temperature. Type FM M TA06 V c es Volts VcEO Volts 80 80 lc mA 500 Ptot* mW 350 h FE VcE {sat min/max at Ic /V c e max at Ic /Ib m A/Volts Volts mA 5 0 /- 10/1 Noise Figure at

I3C327

Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com ­

transistors BC 487

Contextual Info: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

bc487

Abstract: transistors BC 487 bc487b
Contextual Info: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous

BCX56

Abstract: BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16
Contextual Info: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount

BC253

Abstract: BC251 BC252 BC 251 BC256 transistor bc 102 BC309 BC307 BC308
Contextual Info: BC251 . . BC307 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC256 is available in groups A and B only. BC253 and BC309 are low noise types.

BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

BC173

Abstract: BC171 BC174 bc172 BC238 BC239 BC238 h parameter transistor bc171 transistor bc237 bc337 BC237
Contextual Info: BC171 . . BC237 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and

Bc449

Abstract: BC447
Contextual Info: BC447, BC449, BC449A High Voltage Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

Contextual Info: BC488B High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –60 Vdc Collector-Base Voltage VCBO –60 Vdc Emitter-Base Voltage VEBO –4.0 Vdc Collector Current – Continuous IC –1.0

BC488B

Contextual Info: BC488B High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −60 Vdc Collector-Base Voltage VCBO −60 Vdc Emitter-Base Voltage VEBO −4.0 Vdc Collector Current − Continuous IC −1.0

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

Contextual Info: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

TL081

Abstract: TL081 equivalent TL081A TL081B TL081M TL081CD TL081IN tl081 PIN DIAGRAM
Contextual Info: TL081 TL081A - TL081B GENERAL PURPOSE J-FET SINGLE OPERATIONAL AMPLIFIERS • WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION ■ HIGH INPUT IMPEDANCE J–FET INPUT N DIP8

tl071 datasheet

Abstract: TL071 PIN DIAGRAM TL071 pin diagram of tl071 datasheet tl071 TL071I TL071A TL071B TL071CN TL071M
Contextual Info: TL071 TL071A - TL071B LOW NOISE J-FET SINGLE OPERATIONAL AMPLIFIERS • WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE en = 15nV/√Hz (typ) ■ OUTPUT SHORT-CIRCUIT PROTECTION N DIP8 (Plastic Package)

TL072

Abstract: tl072 equivalent TL072 PIN DIAGRAM TL072A TL072B TL072CN TL072I TL072M
Contextual Info: TL072 TL072A - TL072B LOW NOISE J-FET DUAL OPERATIONAL AMPLIFIERS • WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE en = 15nV/√Hz (typ) ■ OUTPUT SHORT-CIRCUIT PROTECTION N DIP8 (Plastic Package)

tl0721

Abstract: TL072CL TL072 tl072 cl TL072 PIN DIAGRAM tl072 equivalent tl072 output resistance TL072I diode st 4148 tl072 datasheet
Contextual Info: TL072 TL072A - TL072B LOW NOISE J-FET DUAL OPERATIONAL AMPLIFIERS • WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE en = 15nV/√Hz (typ) ■ OUTPUT SHORT-CIRCUIT PROTECTION N DIP8 (Plastic Package)