BBY 10 Search Results
BBY 10 Price and Stock
Vishay Intertechnologies PRV6SAABBYB25104KAPotentiometers 1.5w 100Kohms 10% |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PRV6SAABBYB25104KA | 166 |
|
Buy Now | |||||||
Vishay Intertechnologies PRV6SAABBYB25103KLPotentiometers 1.5watt 10K 10% |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PRV6SAABBYB25103KL | 59 |
|
Buy Now | |||||||
Vishay Intertechnologies PRV6SAABBYB25101MAPotentiometers 1.5watt 100ohm 20% |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PRV6SAABBYB25101MA | 46 |
|
Buy Now | |||||||
Vishay Intertechnologies PRV6AAABBYB25104MAPotentiometers 0.75W 100Kohms 20% Shaft 12.5mm |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PRV6AAABBYB25104MA | 31 |
|
Buy Now | |||||||
Vishay Intertechnologies PRV6SEABBYB25502JAPotentiometers PVR62 HCM 5K 5% A CONDUCTIVE PLASTIC |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PRV6SEABBYB25502JA | 27 |
|
Buy Now | |||||||
BBY 10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194 |
OCR Scan |
Q62702-B257 Q62702-B194 a235bD5 B235bOS Qbb72 | |
ves05991
Abstract: SCD-80
|
Original |
3-02W VES05991 SCD-80 Mar-23-1999 ves05991 SCD-80 | |
A2 diode
Abstract: BBY 10 DIODE MARKING B4 VSO05561
|
Original |
8-04W 8-06W VSO05561 8-05W EHA07005 EHA07006 EHA07004 A2 diode BBY 10 DIODE MARKING B4 VSO05561 | |
|
Contextual Info: SIEMENS BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Pin Configuration BBY 52-02W K 1 =C Q62702-B0860 |
OCR Scan |
2-02W Q62702-B0860 SCD-80 | |
diode marking 14Contextual Info: BBY 52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY 52-02W K 1=C |
Original |
2-02W VES05991 SCD-80 Sep-30-1999 diode marking 14 | |
|
Contextual Info: SIEMENS BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements |
OCR Scan |
8-04W 8-06W 8-05W EHA07006 EHA07004 EHA07005 Q62702- | |
|
Contextual Info: BBY 51-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY 51-02W I 1=C |
Original |
1-02W VES05991 SCD-80 Oct-05-1999 EHD07128 EHD07129 | |
VPS05161
Abstract: diode marking 53 53 diode
|
Original |
VPS05161 OT-23 Oct-05-1999 VPS05161 diode marking 53 53 diode | |
|
Contextual Info: BBY 52-05W Infineon Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment R Pin Configuration BBY 52-05W S2s upon request 1 = A1 CM II Ordering Code |
OCR Scan |
2-05W OT-323 | |
|
Contextual Info: BBY 53-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage VPS05176 Type Marking Pin Configuration Package BBY 53-03W |
Original |
3-03W VPS05176 OD-323 Oct-05-1999 | |
VPS05178Contextual Info: BBY 51-07 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation 4 • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51-07 HHs Pin Configuration 1 = C1 2 = C2 3 = A2 VPS05178 Package |
Original |
VPS05178 OT-143 Oct-05-1999 EHD07128 EHD07129 VPS05178 | |
|
Contextual Info: BBY 51 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23 |
Original |
VPS05161 OT-23 Oct-05-1999 EHD07128 | |
VSO05561Contextual Info: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W |
Original |
3-05W VSO05561 EHA07179 OT-323 Oct-05-1999 VSO05561 | |
BBY 52Contextual Info: BBY 52 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 52 S5s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23 |
Original |
VPS05161 OT-23 Oct-05-1999 BBY 52 | |
|
|
|||
marking 34 diodeContextual Info: BBY 51-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation • For VCO's in mobile communications equipment VPS05176 Type Marking Pin Configuration Package BBY 51-03W H 1=C SOD-323 2=A Maximum Ratings |
Original |
1-03W VPS05176 OD-323 Oct-05-1999 EHD07128 EHD07129 marking 34 diode | |
b631 transistor
Abstract: S3 marking DIODE b631 Q62702-B631
|
Original |
Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631 | |
VSO05561Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2 |
Original |
2-05W VSO05561 EHA07179 OT-323 May-20-1999 VSO05561 | |
k 518Contextual Info: Silizium -Planar-Kapazitätsdiode B B Y 30 BBY 30 ist eine planare Silizium-Kapazitätsdiode im Gehäuse 51 A2 DIN 41880 D O -7 , welche besonders für Anwendungen im unteren VHF-Bereich geeignet ist. Kathode Typ B este lln u m m e r BBY 30 Q 62702-B 44 |
OCR Scan |
Q62702-B44 /CD30V k 518 | |
DIODE B44
Abstract: BBY30
|
OCR Scan |
BBY30 Q62702-B ambg60Â DIODE B44 BBY30 | |
MARKING 02W
Abstract: CT10
|
Original |
5-02W VES05991 SCD-80 Apr-30-1998 mipr-30-1998 MARKING 02W CT10 | |
CT10
Abstract: VSO05561
|
Original |
5-05W VSO05561 EHA07179 OT-323 Oct-21-1999 otct-21-1999 CT10 VSO05561 | |
Q62702B
Abstract: marking 34 diode
|
OCR Scan |
1-02W Q62702-B0858 SCD-80 Q62702B marking 34 diode | |
|
Contextual Info: BBY 58-03W Silicon Tuning Diode 2 • Excellent linearity 1 • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements VPS05176 |
Original |
8-03W VPS05176 OD-323 Oct-05-1999 25MHz | |
|
Contextual Info: SIEMENS BBY 56-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread |
OCR Scan |
6-02W Q62702- SCD-80 56-02ectrical | |