BBL5123 Search Results

NIHON PULSE

Abstract: Nihon Inter Electronics ME6N10-F nihon GS ME6N10
Contextual Info: - NIHON INTER S7E ELECTRONICS bbl5123 » 0 0 0 1 1 3 b «NIEJ ME6N10 ME6N10-F •d Vq s S RDS on 6A 100V 0 .2 5 0 N-Channel Power MOSFET FEATURES: • Fast Switching Speed • Low On-Resistance • Ease of Paralleling • No Second Breakdown • TO-252 Surface Mount Package

Contextual Info: - • FAST RECOVERY DIODE MODULE bbl5123 000220^ TSG PC50F3 PC50F4 PD50F3 PD50F4 55.5A/300~ 400V/trr : 80nsec FEATURES «Isolated Base ° Dual Diode Arms - Cathode Common and Doubler Circuit c Ultra - Fast Recovery ° High Surge Capability

11DQ03L

Abstract: 251C LL1S123
Contextual Info: SCHOTTKY BARRIER DIODE ia 11D Q 0 3 L /sov FEATURES 2.7 .106 DIA 2.3C-091) o Miniature Size o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability 030 Volts thru 100 Volts Types Available o 52mm Inside Tape Spacing Package Available

Diode 31DQ04

Abstract: 31DQ04 31DQ03 4vua
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX

NSD03B10

Abstract: NSD03B20 NSD03B40 DIODE 3A rectifier diode 3A
Contextual Info: SILICON RECTIFIER DIODE 3a / 1 0 0 ~ 4 0 0 v nsdo 3b io nsd 03B20 nsd 03 B 40 FEATURES o Surface Mounting Device ° High Surge Capability o Low Forward Voltage Drop ° Low Reverse Leakage Current ° Packaged in 16mm Tape and Reel ° Not Rolling During Assembly

E10DS2

Abstract: E10DS4
Contextual Info: SILICON RECTIFIER DIODE ia / io o ~ 4 oov e io d s i FEATURES e io d s 1 8 071, 1.4(.055 OTO-243AB (SOT-89) Case .L 1.2(.047) 0.81.031) ° Low Reverse Leakage Current e io d s 4 1.6I.0631MAX 2.4(,094) I [ 4.251167) ° Surface Mount Device o Low Forward Voltage Drop

21DQ03

Abstract: 21DQ04
Contextual Info: SCHOTTKY BARRIER DIODE 21DQ03 21DQ04 1.9A/30—40V FEATURES Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volts Types Available o 52mm Inside Tape Spacing Package Available Approx. Net Weight: 0.38 Grams

10E2

Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)

F10P20F

Abstract: 10P10 C10P10F C10P10FR C10P20F F10P F10P10FR T40-X C10P-FR F10P20FR
Contextual Info: FAST RECOVERY DIODE U A / 100~ 200V /,rr: 35„ * c « jjfl» C}0P20Fr F 10P 10Fr F 10P20Fr 3.K.122 MAX FEATURES f 10.3C405) 3 .4 U 3 4 )„ •*</3S118I1&#39; ° Similar to T0-220AB Case » Fully Mold Isolation F-Type) 553) • Dual Diodes - Cathode Common and

ik02

Abstract: PC100F6 PD100F6 cf 595
Contextual Info: FAST RECOVERY DIODE MODULE PC100F6 PD100F6 100A / 600V/trr: 110nsec FEATURES .1-M5 SCflEW o Isolated Base ODual Diodes - Cathode Common :PC100F6 Doubler :PD100F6 o Super F ast Recovery o High Surge Capability -97.5 3.84 - ÓL 30 W 710 28) « "T Î N ° i 30

FCQ20A03L

Abstract: GCQ20A03L wines
Contextual Info: SCHOTTKY BARRIER DIODE GCQ20A03L FCQ20A03L 20A/30V 1.40 55) 1.2 047) FEA TU RES KM U09) 3.M.122) MAX 3.7Î.U5] 10.3Î.4ÛS1 o TO-220AB : GCQ20A03L O T0-220AB Fully Molded Isolation : FCQ20A03L oDu'al Diodes - Cathode Common M A Y 5’ 4.K.16DMAX OLow Forw ard V oltage Drop

Diode SMD SJ

Abstract: Diode SMD SJ 95 5C smd C10T03Q C10T04Q C10T04Q-11A Diode SMD SJ 11
Contextual Info: SCHOTTKY BARRIER DIODE C10T03Q 11A/30— 40V C10T04Q C10T04Q-11A °|SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C10T*Q ° Tabless T 0 - 2 2 0 :C10T04Q-11A ° Dual Diodes— Cathode Common ° Low Forward Voltage Drop o High Surge Capability

25 HMR 120

Abstract: 40 hmr 120 ST Low Forward Voltage Schottky Diode KCQ120A03LE diode120a
Contextual Info: SCHOTTKY BARRIER DIODE 120A/ 30 V KCQ120A03LE FEA TU RES o Similar to TO-247AC x 2 Case ODual Diodes—Cathode Common o Low Forward Voltage Drop OLow Power Loss, High Efficiency oH igh Surge Capability Dimesnions in mm Inches Approx. Net Weight : 30 Grams

Contextual Info: FAST RECOVERY DIODE 17.7A/300~ 400V/trr : 45nsec C16T30F C16T40F C16T40F-11A ° |SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C16T««F ° Tabless T0-220:C16T40F-11A ° Dual Diodes — Cathode Common o Ultra - Fast Recovery 0 Low Forward Voltage Drop

U176

Contextual Info: SILICON RECTIFIER DIODE i a /100~600 v “ “ ¡¡f* FEATURES »Miniature Size, Surface Mount Device OÄOTO High Surge Capability n r o.oi.ooo u1.71.067) 1.31.051) o Low Forward Voltage Drop • Low Reverse Leakage Current SOLDERL1NG PAD D 2.0 ° Packaged in 12mm Tape and Reel

C16P06Q

Abstract: C16P05Q DIODE in 5060 QQD2071 TTO5355 22C08
Contextual Info: SCHOTTKY BARRIER DIODE C16P05Q C16P06Q 17.7A/50— 60V FEATUR ES • Similar to TO-247AC TO-3P Case 0 Dual Diodes - Cathode Common » Low Forward Voltage Drop 0 Low Power L o s s , High Efficiency 0 High Surge Capability o 30 Volts through 100 Volts Types Available

4051 SMD

Abstract: FCQ20A04 smd diode g7 ot 112 DIODE G7 C20T04Q C20T04Q-11A GCQ20A04
Contextual Info: C20T04Q C20T04Q-11A 22A/40V SCHOTTKY BARRIER DIODE GCQ20A04 FCQ20A04 FEATURES ° I SOUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C20T04Q o Tabless TO-220: C20T04Q-11A o TO-220AB : GCQ20A04 o T0-220A B Fully Molded Isolation : FCQ20A04 o Dual Diodes - Cathode

F8P04Q

Abstract: C8P04Q C8P04 E F8P C8P03Q F8P03Q
Contextual Info: SCHOTTKY BARRIER DIODE s .9 a / 3 0~40v g jjfjj FEA TUR ES • Similar to T0-220AB Case » Fully Molded Isolation F-Type » Dual Diodes - Cathode Common ° Low Forward Voltage Drop » Low Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 60 Volts Types

9loc

Abstract: PC80Q04N
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PC80Q04N 89a /40v FEATURES ° Dual - Cathode Common to Base Plate Low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability MAXIMUM R A T IN G S "\TYPE Voltage Rating Repetitive Peak Reverse Voltage per Ann

PC60QL02N

Abstract: PC60QL03N 151E3
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PC60QL02N PC60QL03N 66A/2 o ~ sov FEATURES Dual r-Cathode Common to Base Plate ®Extremely Low Forward Voltage Drop ® Low Power L o s s , High Efficiency ° High Surge Capability MAXIMUM RATINGS ^\TYPE ♦ PC60QL02N Voltage Rating

30D1 diode

Abstract: 30D4 diode 30D1 30D2 30D4
Contextual Info: 30 D 1 30D2 30D4 3 A /10 0 ~ 40 0 V SILICON RECTIFIER DIODE FEA TURES 5.8 .23 DIA • Low Forward Voltage Drop - t o Low Reverse Leakage Current 1.5C059) DIA 1.3C051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)

16KQ50

Abstract: 16KQ50B 16KQ60 16KQ60B T0247AC
Contextual Info: SCHOTTKY BARRIER DIODE 16KQ50 16KQ60 16KQ50B 16KQ60B i 6 . 6A / 50 ~ 60 v FEATURES 3 .6 U 4 2 . T T T T T R U iA »Similar to TO-247AC TO-3P) Case » Low Forward Voltage Drop ' Low Power Loss, High Efficiency » High Surge Current Capability »30 Volts and 100 Volts Types Available

10 35L DIODE

Abstract: 50VQ06 50VQ06F 31-012 50VQ05 50VQ05F
Contextual Info: SCHOTTKY BARRIER DIODE 50VQ05 50VQ06 50VQ05F 50VQ06F 5 .5 A / 5 0 ~ 6 0 V FEATURES ° TO-251AA Case • TO-252AA Case Surface Mount Device • Low Forward Voltage Drop ° Low Power Loss 0 High Surge Capability 0 30 Volts thru 100 Volts Types Available ° Packaged in 16mm

S70 SMD

Abstract: Diode SMD SJ 22 A 2761 I smd diode se p5 Diode SMD SJ 15 DIODE 61 BP 7U46 a 2761 to-220 SCHOTTKY 20A 40V C20T04QH
Contextual Info: SCHOTTKY BARRIER DIODE C20T04QH C20T04QH-11A 2 0 A /4 0 V FEA TU RES o | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C20T04QH oTabless T0-220 : C20T04QH-11A oDual Diodes - Cathode Common O Low Forward Voltage Drop o High Surge Capability OTj=150°C operation