000210B Search Results

25 HMR 120

Abstract: 40 hmr 120 ST Low Forward Voltage Schottky Diode KCQ120A03LE diode120a
Contextual Info: SCHOTTKY BARRIER DIODE 120A/ 30 V KCQ120A03LE FEA TU RES o Similar to TO-247AC x 2 Case ODual Diodes—Cathode Common o Low Forward Voltage Drop OLow Power Loss, High Efficiency oH igh Surge Capability Dimesnions in mm Inches Approx. Net Weight : 30 Grams

F5KF20B

Abstract: F5KF20 5KF20 DIODE F5KF20 5KF10 5KF20B 5KF10B fskf20 T.C 236 F5KF10
Contextual Info: FAST RECOVERY DIODE «; i a / i n n 5.5A/100 9n m //t r r • 5KF10 F5KF10 5KF20 F5KF20 2 0 0 V /tr r. 35nsec 5KF10B F5KF10B 5KF20B F5KF20B FEATURES ° Similar to T0-220AC and TO—220AB Case ° Fully Molded Isolation Case F- Type « Ultra - Fast Recovery

ADM 3053

Abstract: voice transcever circuit diagram 41516 MT8980 PM4341A PM6341 PM6341E1XC PM7345 PSB 2165 H rohm "marking" T32
Contextual Info: PMC-Sierra, Inc. S tandard P roduct I I / 1 ^ ^ P M 6341E 1X C £7 FRAMER/TRANSCEIVER ISSUE 7 FEATURES • Integrates a full-featured E1 transceiver in a single device with analog circuitry fo r receiving and transm itting G.703 2048 kbit/s com patible signals and digital

Contextual Info: THYRISTOR MODULE AK25QB40/80 UL;E76102 M Power Thyristor Module A K 2 5G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 800 V are available, and electrically isolated mounting base make your

501B 8 P

Contextual Info: S-2929CR/I C M O S 2 K - b it se ria l E 2P R O M E a s y in te rfa c e with s e r ia l port W ith m e m o r y p ro te ctio n T h e S -2 9 2 9 C R /I is a high s p e e d , low p o w e r 2 K -b it E 2 P R 0 M th a t u s e s th e C M O S flo a tin g -g a te p ro c e s s .

HYM532200AM

Abstract: gaa 816
Contextual Info: HYUNDAI SEMICONDUCTOR HYM532200A Series 2M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532200A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.