BB10 Search Results

ADE-208-505A

Abstract: BB101C DSA003642
Contextual Info: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;

Contextual Info: BOARD-to-BOARD Connectors 1.00mm MALE & FEMALE SET BBA SERIES BB10-PO-XXX-G-X.XX-PP-T/R A D C 1.00mm MALE .157 [4.00] .039 [1.00] .012 [0.30] .039 [1.00] .283 [7.20] .020 [0.50] .283 [7.20] .059 [1.50] BB10-PO-020-G-X.XX-PP-T/R .230 [5.85] Replace XX in Part No. with No. of Positions

MV109

Abstract: BB105 MV2104 MV104G MV1662 MV1662-2 BB105A MV1404 MV2102 MV2114
Contextual Info: FM Radio Abrupt and TV Hyper-Abrupt Tuning . . . designed fo r use in V H F and U H F tuners and FM radio, providing solid-state reliability in replacement o f mechanical tuning methods. A /" Device Type BB105B BB105G BB105A MV104 MV104G MV109 MV209 MV1401

BB101C

Contextual Info: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

560 K RESISTANCE

Abstract: BB102M BB302M Hitachi DSA00337
Contextual Info: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 Z 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

BB105

Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Contextual Info: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5

BI resistor network

Abstract: BB1020DT UCC561
Contextual Info: MODEL BB1020DT Low Voltage Differential LVD SCSI Termination Network CUSTOM POWER MODULES DESCRIPTION The BB1020DT is an LVD termination network designed to terminate high performance SPI-2 (Ultra2) and SPI-3 (Ultra3) bussed applications. Wide SCSI bus applications

100-Ball

Abstract: 288-ball
Contextual Info: Package Diagrams Thin Ball Grid Array Packages 100-Ball Thin Ball Grid Array 11 x 11 x 1.4 mm BB100 51-85107 1 Package Diagrams 165-Ball FBGA (13 x 15 x 1.35 mm) BB165 51-85122 2 Package Diagrams 172-Ball FBGA BB172 51-85114 3 Package Diagrams 256-Ball Thin Ball Grid Array (17 x 17 mm) BB256

Contextual Info: BB101C Build in Biasing Circuit MOS F E T IC UHF RF A m plifier HITACHI ADE-208-505 1st. Edition Features • Build in Biasing C ircuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF - 2.0 dB typ. at f = 900 M H z • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,

Renesas variable capacitance diode marking code A2

Abstract: k1510 BB101M sot143rmod
Contextual Info: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

BGA OUTLINE DRAWING

Abstract: BB1020DT BB1020DT13 BB1020DT7 BB1020DTLF7
Contextual Info: MODEL BB1020DT SCSI Termination Resistor network Low Voltage Differential LVD DISCRIPTION Model BB1020DT is a SCSI LVD termination network designed to terminate high performance SPI-2 (Ultra2) and SPI-3 (Ultra3) bused applications. Wide SCSI bus applications can be terminated with three BB1020DT

Contextual Info: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

Hitachi DSA002759

Contextual Info: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 Z 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

Contextual Info: MODEL BB1020DT PRELIMINARY DATA Low Voltage Differential LVD SCSI Termination Network CUSTOM POWER MODULES DESCRIPTION The BB1020DT is an LVD termination network designed to terminate high performance SPI-2 (Ultra2) and SPI-3 (Ultra3) bussed applications. Wide SCSI bus applications

BB102C

Abstract: BB302C SC-82AB SOT-343mod ADE-208-588 Hitachi DSA00336
Contextual Info: BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 Z 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

BB101C

Abstract: SC-82AB Hitachi DSA00335
Contextual Info: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 2.0 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,

BB109G

Abstract: BB105B BB109 BB105G BB112 BBY40 T092
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics B apM Kanbi Kofl: Ddm» [n ] Cdm» [n®] V r » [B] If [mA] BB105G BB109G BBY40 BB105B 1,8 4,3 6,0 2,0 18 32 30 18 30 30 30 35 0,2 0,2 0,02 0,2 BB112 17,0 560 12 0,05 Kopnyc

BB102M

Abstract: BB302M DSA003642
Contextual Info: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

Contextual Info: MODEL BB1020DT PRELIMINARY DATA Low Voltage Differential LVD SCSI Termination Network CUSTOM POWER MODULES DESCRIPTION The BB1020DT is an LVD termination network designed to terminate high performance SPI-2 (Ultra2) and SPI-3 (Ultra3) bussed applications. Wide SCSI bus applications

BB102C

Abstract: BB302C DS 1287 SOT-343mod DSA003642
Contextual Info: BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 Z 1st. Edition Nov. 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

Contextual Info: Extract from the online catalog HC-BB 10-ESTC Order No.: 1687448 HEAVYCON male insert, BB10 series, 10-pos., crimp connection Product notes WEEE/RoHS-compliant since: 08/29/2006

BB106

Abstract: BB105B diode blue stripe BB1056 BU105 BB106G BB105A bb105 BB105A/B BB105G
Contextual Info: BB105A silicon BB105B BB105G vvc -WfVOLTAGE VARIABLE CAPACITANCE DIODES S IL IC O N E P IC A P D IO D E S . . . designed in the new low-inductance volume requirem ents of U H F and V H F T V frequency control and tuning applications; ability in replacement of m echanical tuning

sot343mod

Abstract: Hitachi DSA002759
Contextual Info: BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 Z 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

BB105

Abstract: BB105 siemens
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV4100 Series Features • ■ ■ ■ Direct Replacement for Motorola, Siemens, and ITT BB105 and M V 1 09 Types Highest Q Possible Reproducible C vs. V Characteristics Available in All Standard Packages Types ■ ■ Description