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    SOT143RMOD Search Results

    SOT143RMOD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1SV70

    Abstract: BIC703M
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    1sv70bic703m PDF

    572B

    Abstract: BB302M
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    572bbb302m PDF

    BB301M

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    bb301m PDF

    BB502M

    Abstract: DSA003644
    Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz


    Original
    bb502made-208-809c200pfot-143rmod+1dsa003644 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    BB501M

    Abstract: REJ03G0831-0600
    Contextual Info: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;


    Original
    bb501mrej03g0831-0600ade-208-700d200pf+2ot-143rmodplsp0004za-a PDF

    BB501M

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    bb501m PDF

    BIC702M

    Abstract: 1SV70 MARKING CODE l3 monolithic amplifier
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    bic702m1sv70marking code l3 monolithic amplifier PDF

    Contextual Info: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original
    bb504mr07ds0286ej0800rej03g0837-0700ot-143rmod+1plsp0004za-a PDF

    BB502M

    Abstract: K3024
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    bb502mk3024 PDF

    Renesas variable capacitance diode marking code A2

    Abstract: k1510 BB101M sot143rmod
    Contextual Info: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)


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    bb101mrej03g0822-0300ade-208-504a200pf+5ot-143rmodplsp0004za-arenesas variable capacitance diode marking code a2k1510sot143rmod PDF

    1SV70

    Abstract: BB305M
    Contextual Info: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.


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    bb305mrej03g0829-0600ade-208-607d200pf+3ot-143rmodplsp0004za-a1sv70 PDF

    BB301M

    Contextual Info: BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 Previous ADE-208-506A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)


    Original
    bb301mrej03g0824-0300ade-208-506a200pf+2ot-143rmodplsp0004za-a PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    1SV70

    Abstract: BIC702M
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    1sv70bic702m PDF

    Contextual Info: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


    Original
    bb502mr07ds0284ej0600rej03g0833-0500200pf+2ot-143rmodplsp0004za-a PDF

    BB102M

    Abstract: BB302M DSA003642
    Contextual Info: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;


    Original
    bb102made-208-587a200pfot-143rmod+2bb302mdsa003642 PDF

    BB301M

    Abstract: DSA003642
    Contextual Info: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;


    Original
    bb301made-208-506a200pfot-143rmod+1dsa003642 PDF

    diode MARKING CODE 917

    Abstract: 1SV70 BIC703M L1103 21l4 sot143rmod DSA003645
    Contextual Info: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)


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    bic703made-208-984d200pfot-143rmod+6diode marking code 9171sv70l110321l4sot143rmoddsa003645 PDF

    BB503M

    Abstract: ADE-208-811C DSA003644
    Contextual Info: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz


    Original
    bb503made-208-811c200pfot-143rmod+1dsa003644 PDF

    572B

    Abstract: BB302M
    Contextual Info: BB302M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0825-0400 Previous ADE-208-572B Rev.4.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)


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    bb302mrej03g0825-0400ade-208-572b200pf+3ot-143rmodplsp0004za-a572b PDF

    1SV70

    Abstract: BB304M
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    1sv70bb304m PDF

    BB502M

    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    bb502m PDF