BAW62 SURFACE MOUNT Search Results

IR5 20v

Abstract: BAW62 BAW62M LLBAW62
Contextual Info: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M LLBAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics

pm2222a

Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Contextual Info: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT

Philips fr 153 30

Contextual Info: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.

1N4148 LL34

Abstract: DH333 d1703 MBD914
Contextual Info: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Single Junction Diodes Single Junction Diodes Surface Mount SOT-23 & LL34 Part Number Remarks RRM VF m (V ) M MBD1701/ A S in g le M ax so M M B D 1703/A S e rie s 50 M MBD1704/A

Contextual Info: BAS56 _ y \ _ SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists o f tw o separate planar epitaxial ultra-high speed, high conductance diodes in one m icrominiature plastic envelope intended fo r surface mounting.

Contextual Info: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.

Contextual Info: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage

ic TDA7021T

Abstract: TDA7050T BAW62 MS-012AA TDA7021T TDA7040T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7040T Low voltage PLL stereo decoder Product specification File under Integrated Circuits, IC01 September 1986 Philips Semiconductors Product specification Low voltage PLL stereo decoder TDA7040T GENERAL DESCRIPTION The TDA7040T is a monolithic integrated circuit for low cost FM stereo radios with an absolute minimum of peripheral

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

BAS 20 SOT23

Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
Contextual Info: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*

1N4148 SMD PACKAGE

Abstract: BAW62 SMD philips 1n4148 SMD 1N4148 SMD sot23 PACKAGE BAV21 SOT143B BAS21H diode 1N4148 SMD 1PS184 BAW62 SOT23 1PS226
Contextual Info: Semiconductors Date of release: September 2004 Switching diodes portfolio trr max. [ns] VR max. [V] General purpose switching diodes: double, triple and quad diodes Package Size in mm Ptot [mW] SOT346 SC-59 Plastic SMD SOT457 (SC-74) Plastic SMD SOT23 SOT143B

TDA7021T

Abstract: TDA7040 BAW62 MS-012AA TDA7040T TDA7050T
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.

NF-2000

Abstract: BAW62 BSH112 PIP250M HVQFN68
Contextual Info: PIP250M Integrated buck converter An innovative solution for Point of Load POL regulators Philips new PIP250M single-phase DC/DC synchronous buck converter integrates five component functionalities in a single package.This innovative multi-chip module provides

marking code qa surface mount diode

Abstract: theremin
Contextual Info: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current Pulse Width = 10 ms

BAS16DXV6T1

Abstract: BAS16DXV6T5 BAW62
Contextual Info: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA

tda1023 applications

Abstract: TRIAC bt139 heater temperature control TDA1023 philips thermistor 2322 642 proportional controlling heater with triac TRIAC heater temperature control Triac stabilizer application note TDA1023T power triac circuit handbook triac burst control ic
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1023/T Proportional-control triac triggering circuit Product specification Supersedes data of August 1982 File under Integrated Circuits, IC02 May 1991 Philips Semiconductors Product specification Proportional-control triac triggering circuit

Contextual Info: ON Semiconductort Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg

BAS16WT1

Abstract: BAW62 SMD310 baw62 surface mount
Contextual Info: MOTOROLA Order this document by BAS16WT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C 1 Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current

BAS16TT1

Abstract: BAW62 SMD310 baw62 surface mount 555 CIRCUIT WITH FOOTPRINT
Contextual Info: BAS16TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF

BAW62

Abstract: DA121TT1 SMD310
Contextual Info: DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms http://onsemi.com Symbol Max Unit VR 80 V IF 200 mA IFM(surge) 500

TDA1023

Abstract: TRIAC bt139 heater temperature control tda1023 applications TRIAC heater temperature control philips thermistor 2322 642 Triac stabilizer application note triac firing pulse generating circuit controlling heater with triac proportional controlling heater with triac triac triggering ic
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1023/T Proportional-control triac triggering circuit Product specification Supersedes data of August 1982 File under Integrated Circuits, IC02 May 1991 Philips Semiconductors Product specification Proportional-control triac triggering circuit

BAS16TT1

Abstract: BAW62 SMD310 baw62 surface mount
Contextual Info: BAS16TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms http://onsemi.com Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500

BAS16TT1

Abstract: BAW62 SMD310
Contextual Info: BAS16TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF

555 CIRCUIT WITH FOOTPRINT

Abstract: BAW62 DA121TT1 SMD310
Contextual Info: DA121TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 80 V IF