BASE COLLECTOR EMITTER Search Results

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C

Contextual Info: Product specification 2SB1219A Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO

1N916

Abstract: MMBT3906T SC-89
Contextual Info: MMBT3906T General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE P b Lead Pb -Free 1 2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO

2N3749

Abstract: JANTXV 2N2880 equivalent 1000C 2N2880 JANTXV2N3749
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: KST6428 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC

KSC900

Contextual Info: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

LG tv tuner unit

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R J TV TUNER, VHF OSCILLATOR APPLICATIONS. *j U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

2SC2348

Contextual Info: SILICON NPN PLANAR TYPE TRANSISTOR TV VHF RF AM PLIFIER APPLIC A TIO N S. M A X IM U M U n i t in m m RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation

Contextual Info: KSC3120 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR UHF TV TUNER SOT-23 lGCE=17dB TYP GRE=0.6pF (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current (DC)

Contextual Info: Transistors SMD Type Product specification 2SA1576A Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage

MIL-PRF-19500/526

Abstract: 2N3879 transistor 6 MHz
Contextual Info: TECHNICAL DATA 2N3879 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/526 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

2N3791

Abstract: 2N3792 1000C
Contextual Info: TECHNICAL DATA 2N3791 JAN, JTX, JTXV 2N3792 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/379 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N5685

Abstract: 2N5686 1000C 2000C
Contextual Info: TECHNICAL DATA 2N5685 JAN, JTX, JTXV 2N5686 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/464 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST92 : KST93 Collector-Emitter Voltage : KST92 : KST93 Emitter-Base Voltage Collector Current Collector Dissipation

2N7368

Contextual Info: TECHNICAL DATA MIL-PRF 2N7368 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/622 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

2N7369

Contextual Info: TECHNICAL DATA MIL-PRF 2N7369 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/621 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

Contextual Info: Product specification 2PB709AW Features High collector current max. 100 mA . Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45

KSB564A

Abstract: KSD471A
Contextual Info: KSD471A KSD471A Audio Frequency Power Amplifier • • • • Complement to KSB564A Collector Current : IC=1A Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

Contextual Info: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

NTE2314

Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo

KSP2907A

Abstract: inline amplifier specifications KSP2907ABU KSP2907ACBU KSP2907ATA PN2907A KSP2907AC
Contextual Info: KSP2907A tm PNP General Purpose Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW • Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base) TO-92 • Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)

Contextual Info: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base