BAI 57 Search Results

Contextual Info: 1 2 ' 9 3 4 f t f t f t ft" * f t f t f t f t f t f t f t f t iiiiiil in n n i § 17.20 .677 CM 5 .2 0 (. 2 0 0 ) CONNECTOR MATING SIDE O B 1 2 3 4 5 6 REV 7 8 DESCRIPTION Z D N E LTR DATE REVISER APPD ORDERING INFORMATION: BAI * S (1 ) (2 ) (3 ) - 3 _î_

Contextual Info: CXD2422R 1/3 IL08 C-MOS TIMING GENERATOR FOR CCD CAMERA NC NC GND VDD NC VDD GND GND NC 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 48 47 46 45 44 43 42 41 40

Contextual Info: SONY CXD2422R CCD Camera Timing Generator Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480.000 pixels EIA, effective pixels and CCDs with 570.000 pixels (CCIR, effective pixels). Features • EIA and CCIR compatible

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

Contextual Info: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

Contextual Info: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM

063AL

Abstract: CXD2422R CXD8302Q HCLP2 BAI 57 VLT2 hd 283
Contextual Info: CXD2422R CCD Camera Timing Generator For the availability of this product, please contact the sales office. Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480,000 pixels EIA, effective pixels and CCDs with

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM KMM466S1723T3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T3 is a 16M bit x 64 Synchro­

Contextual Info: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam­

Yamaha V6388B

Abstract: ba1514 yamaha LSI2163
Contextual Info: YAMAHA L S I VPDC • OUTLINE The versatile panel display controller (VPDC) is a high-level display controller with functions for controlling large-capacity flat panel displays (hereinafter simply “panels”) and for controlling raster-scanning C R T displays. In addition, since application software written for CRTs can

Contextual Info: SDRAM MODULE Preliminary KMM377S1620BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. Revision 6 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16-19 @Functional Block Diagram

Contextual Info: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S3320T3 is a 32M bit x 72 Synchro­

Contextual Info: KMM366S3253AT PC100 SDRAM MODULE KMM366S3253AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM366S3253AT is a 32M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­

Contextual Info: KMM374S3253AT PC100 SDRAM MODULE KMM374S3253AT SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S3253AT is a 32M bit x 72 Synchro­ • Performance range

Contextual Info: Preliminary SDRAM MODULE_ KMM377S1620CT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S1620CT2 SDRAM MODULE KMM377S1620CT2 SDRAM DIMM (Intel 1.1 ver. Base)

Contextual Info: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 August '98 ELECTROMCS

25R9

Abstract: PDM-25R-16G
Contextual Info: 0 POWER DIVIDERS I COMBINERS PDM-25R Series 0.3 to 26.5 GHz / 2-W ay / Extrem ely Wide Instantaneous B W / Uniform Phase & Ampli. Bat. / SMA PRINCIPAL SPECIFICATIONS Freq. Isolation, Insert. Phase Amplitude VS W R Max., C W Input ,W, Outline Model Range, dB,

Contextual Info: KM44S32030B CMOS SDRAM 128Mbit SDRAM 8M X 4Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS KM44S32030B CMOS SDRAM R evision H istory

D 2058

Abstract: RG63B 12-8 BENDIX RG-124 RG-62B
Contextual Info: QWL special arrangements Ever expanding requirements for more complex circuits in ground equipment and elevated altitude applications has prompted Amphenol/Bendix to provide inserts not covered by the MS drawings. Many of these special inserts are also available in alternate keyway positions.

Contextual Info: Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. REV. 2 April '98 aJECTRONCS Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM

Contextual Info: A D A P T E C INC MME D E2 Q S l M M l b D D Q 5 G 3 M S E AAC High-Performance Single-Chip SCSI Mass Storage Controller " r s z - 3 DATA BUFFER SRAM 256K MAX DRAM 1M M AX SCSI BUS AIC-7110 Typical Application