BAI 57 Search Results

pcf5073h

Abstract: "GSM baseband" A1FK
Contextual Info: Philips Semiconductors Short-form preliminary specification GSM Baseband and Audio Interface BAI PCF5073 FEATURES 2. • Low power device in 0.5 micron CMOS technology for 3.0 V typical power supply The transmit path, which transforms a bitstream to analog quadrature signals for the RF devices.

Contextual Info: VMM-2D Series_ VECTOR l&Q MODULATOR 2.5 to 6.5 GHz / High Rate Analog OPSK for MSK Systems / Excellent Phase & Ampli. Bai. / SMA INPUT I 270 ° RF INPUT CARRIER 9 °° 180° OUTPUT PHASE STATES PRINCIPAL SPECIFICATIONS Model Number RF/LO Center Freq.,

128Gb Nand flash toshiba

Abstract: THNAT640MBAI 13AH backup file block signal flash ata 16 mb pcmcia THNAT1G53BAI toshiba nand flash 640MB THNAT016MBAI toshiba 128gb nand flash
Contextual Info: Preliminary version THNATxxxxBAI Series THNATxxxx THNATxxxxB ATxxxxBAI Series Flash Memory Card ATA OUTLINE The THNAT*BAI series Flash Memory Card ATA is a flash technology based with ATA interface memory card. It is constructed with flash disk controller chip and Toshiba NAND flash memory device. The Flash Memory Card

dn404

Abstract: D53LC DFLS230L LT3506AEDHD LT3506EDHD NSR0230M2T5G
Contextual Info: advertisement Dual Monolithic Step-Down Switching Regulator Provides 1.6A Outputs with Reduced EMI and VOUT as Low as 0.8V Design Note 404 Hua Walker Bai Introduction Electronic devices are becoming smaller while the power requirements are increasing to satisfy ever more functionality. To preserve power and manage heat, switching

DIN 16901

Abstract: cuni18zn20 ETD44 bobbin ETD44 ETD44-P kaschke 18 kaschke rev.1 P-4403 sp 4403 ETD-44
Contextual Info: ETD44_Pin Shine_P-4403.pdf -50.0- od -32.0-29.6- ô K z I'D ò -H LD •sj- -S Q 0 .8 @ REV. REVISIONS 1 REC. REV. REVISIONS REC. PIN TENSION LOAD 1 .5 K G -> 2.0KG; UPDATE DRAWING. DRAWN & LIU YOU SEN DRAFTED BY CHECKED & APPROVED BY TIAN BAI SEN ±0.1

Contextual Info: 1 2 ' 9 3 4 f t f t f t ft" * f t f t f t f t f t f t f t f t iiiiiil in n n i § 17.20 .677 CM 5 .2 0 (. 2 0 0 ) CONNECTOR MATING SIDE O B 1 2 3 4 5 6 REV 7 8 DESCRIPTION Z D N E LTR DATE REVISER APPD ORDERING INFORMATION: BAI * S (1 ) (2 ) (3 ) - 3 _î_

Contextual Info: CXD2422R 1/3 IL08 C-MOS TIMING GENERATOR FOR CCD CAMERA NC NC GND VDD NC VDD GND GND NC 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 48 47 46 45 44 43 42 41 40

EIA/CCIR

Abstract: TPD11 pin 11375 CXD2422R CXD8302Q
Contextual Info: CXD2422R CCD Camera Timing Generator Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480,000 pixels EIA, effective pixels and CCDs with 570,000 pixels (CCIR, effective pixels). 64 pin LQFP (Plastic)

Contextual Info: SONY CXD2422R CCD Camera Timing Generator Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480.000 pixels EIA, effective pixels and CCDs with 570.000 pixels (CCIR, effective pixels). Features • EIA and CCIR compatible

063AL

Abstract: HCLP2
Contextual Info: SONY CXD2422R CCD Camera Timing Generator Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480.000 pixels EIA, effective pixels and CCDs with 570.000 pixels (CCIR, effective pixels). Features • EIA and CCIR compatible

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

EV10AQ190

Abstract: transistor b9n EVX10AQ190TPY EV10AQ190TPY-EB dioda C5N A7N transistor H1 dioda a2n dioda ncc7 DIODE A7N
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

EV10AQ190

Abstract: Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

ka 2843

Contextual Info: KM44S16030B CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S16030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­

BAI 59

Abstract: bai 57 BAI58 FF1506 1P640 FF1003 BAi59 FF1004 1P646
Contextual Info: FAGOR 3 Fast recovery silico n diodes. 1 Amp. to 1.5 Am ps. Repetitive Peak Forward Current Surge Forward Current Ma_x. Forward Volteige Drop at Ta = 25°C Max. Reverse Recovery Time !» *„ g a' Max. Reverse Current at Ta = 25°C s The plastic material carnes U L recognition 94V-0.

48S160

Abstract: 48S1603
Contextual Info: Preliminary KM48S16030 CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,

44s32

Contextual Info: Preliminary KM44S32030 CMOS SDRAM 8M X 4Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM44S32Q30 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

Contextual Info: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

a9333

Contextual Info: Preliminary KM416S8030 CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation The KM416S8030 is 134,217,728 bits synchronous high data

KMM366S424BT-GL

Contextual Info: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

s160-30

Abstract: XC5L
Contextual Info: Preliminary CAAOS SDRAM KM44S16030C 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs CAS latency 2 & 3

Contextual Info: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS