BAI 57 Search Results

128Gb Nand flash toshiba

Abstract: THNAT640MBAI 13AH backup file block signal flash ata 16 mb pcmcia THNAT1G53BAI toshiba nand flash 640MB THNAT016MBAI toshiba 128gb nand flash
Contextual Info: Preliminary version THNATxxxxBAI Series THNATxxxx THNATxxxxB ATxxxxBAI Series Flash Memory Card ATA OUTLINE The THNAT*BAI series Flash Memory Card ATA is a flash technology based with ATA interface memory card. It is constructed with flash disk controller chip and Toshiba NAND flash memory device. The Flash Memory Card

Contextual Info: 1 2 ' 9 3 4 f t f t f t ft" * f t f t f t f t f t f t f t f t iiiiiil in n n i § 17.20 .677 CM 5 .2 0 (. 2 0 0 ) CONNECTOR MATING SIDE O B 1 2 3 4 5 6 REV 7 8 DESCRIPTION Z D N E LTR DATE REVISER APPD ORDERING INFORMATION: BAI * S (1 ) (2 ) (3 ) - 3 _î_

Contextual Info: CXD2422R 1/3 IL08 C-MOS TIMING GENERATOR FOR CCD CAMERA NC NC GND VDD NC VDD GND GND NC 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 GND 48 47 46 45 44 43 42 41 40

Contextual Info: SONY CXD2422R CCD Camera Timing Generator Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480.000 pixels EIA, effective pixels and CCDs with 570.000 pixels (CCIR, effective pixels). Features • EIA and CCIR compatible

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

EV10AQ190

Abstract: Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
Contextual Info: EV10AQ190 Low power QUAD 10-bit 1.25 Gsps ADC Datasheet Summary Main Features • Quad ADC with 10-bit Resolution using True e2v Single Core Technology • • • • • • • • • • – 1.25 Gsps Sampling Rate in Four-channel Mode – 2.5 Gsps Sampling Rate in Two-channel Mode

Contextual Info: Preliminary KMM466S823CT3_144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S823CT3_144pin SDRAM SODIMM

Contextual Info: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466S823CT2 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary 144pin SDRAM SODIMM KMM466S823CT2 KMM466S823CT2 SDRAM SODIMM

Contextual Info: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM

063AL

Abstract: CXD2422R CXD8302Q HCLP2 BAI 57 VLT2 hd 283
Contextual Info: CXD2422R CCD Camera Timing Generator For the availability of this product, please contact the sales office. Description The CXD2422R generates the timing pulses required for driving and signal processing CCDs with 480,000 pixels EIA, effective pixels and CCDs with

Contextual Info: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM KMM466S1723T3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T3 is a 16M bit x 64 Synchro­

Contextual Info: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam­

Contextual Info: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 S a m s u n g E le c tro n ic s re s e rv e s th e rig h t to c h a n g e p ro d u c ts o r s p e c ific a tio n w ith o u t n o tice .

Contextual Info: SDRAM MODULE Preliminary KMM377S1620BT1 Revision History Revision 4 May 1998 - CLK Input Cap. is added by PLL Input Cap. (27pF) Revision 5 (July 1998) - "REGE" description is changed. Revision 6 (November 1998) - Corrected DQ# at the input of SDRAM(D5) as DQ16-19 @Functional Block Diagram

Contextual Info: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: KMM366S6453AT PC100 SDRAM MODULE KMM366S6453AT SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S6453AT is a 64M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary KMM466S1723T2_144pin SDRAM SODIMM KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous

Contextual Info: Preliminary KMM466S924T_ 144pin SDRAM SODIMM KMM466S924T SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KM M466S924T is a 8M bit x 64 Synchronous

Contextual Info: Preliminary KMM377S3320T3 SDRAM MODULE KMM377S3320T3 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S3320T3 is a 32M bit x 72 Synchro­

Contextual Info: KMM366S3253AT PC100 SDRAM MODULE KMM366S3253AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM366S3253AT is a 32M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­

Contextual Info: KMM374S3253AT PC100 SDRAM MODULE KMM374S3253AT SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S3253AT is a 32M bit x 72 Synchro­ • Performance range

Contextual Info: Preliminary SDRAM MODULE_ KMM377S1620CT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S1620CT2 SDRAM MODULE KMM377S1620CT2 SDRAM DIMM (Intel 1.1 ver. Base)