KMM366S424BT Search Results
KMM366S424BT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV. |
OCR Scan |
KMM366S424BT PC100 54Max) 4Mx16 KM416S4030BT | |
KMM366S424BT-GLContextual Info: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM366S424BT KMM366S424BT PC100 4Mx64 4Mx16, 400mil 168-pin KMM366S424BT-GL | |
KMM366S424BT-GL
Abstract: CADD-30
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Original |
KMM366S424BT PC100 100MHz 100MHz KMM366S424BT-GL CADD-30 | |
KM416S4030BT-G10
Abstract: KMM366S424BTL-G0 KMM366S424BTL
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Original |
KMM366S424BTL 200mV. 66MHz KM416S4030BT-G10 KMM366S424BTL-G0 KMM366S424BTL | |
Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM |
OCR Scan |
KMM366S424BTL_ KMM366S424BTL KMM366S424BTL 366S424BTL 400mil 168-pin 54Max) 416S4030BT | |
KMM366S424BTL-G0
Abstract: KMM366S424BTL
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OCR Scan |
KMM366S424BTL KMM366S424BTL 4Mx64 4Mx16, 400mil 168-pin KMM366S424BTL-G0 | |
KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
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OCR Scan |
KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT |