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    KMM366S424BT Search Results

    KMM366S424BT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.


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    kmm366s424btpc10054max4mx16+1km416s4030bt PDF

    KMM366S424BT-GL

    Contextual Info: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    kmm366s424btpc1004mx644mx16+3400mil168-pinkmm366s424bt-gl PDF

    KMM366S424BT-GL

    Abstract: CADD-30
    Contextual Info: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.


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    kmm366s424btpc100100mhzkmm366s424bt-gl+1cadd-30 PDF

    KM416S4030BT-G10

    Abstract: KMM366S424BTL-G0 KMM366S424BTL
    Contextual Info: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.


    Original
    kmm366s424btl200mv66mhzkm416s4030bt-g10+1kmm366s424btl-g0 PDF

    Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM


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    kmm366s424btl_kmm366s424btl366s424btl400mil+3168-pin54max416s4030bt PDF

    KMM366S424BTL-G0

    Abstract: KMM366S424BTL
    Contextual Info: KMM366S424BTL PC66 SDRAM MODULE KMM366S424BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    kmm366s424btl4mx644mx16400mil+2168-pinkmm366s424btl-g0 PDF

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


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    km44s4020ctkm48s2020ctkm416s1020ctkm416s1021ct+121mx16km44s16020btkm48s8020btkm416s4020bt------------------------------------16mx44mx64kmm366s424btl-g0kmm466s824bt2f0kmm466s424bt-f0kmm466s824bt2-f04mx1616mx8 PDF