BA779 HF Search Results

BA779

Contextual Info: BA779–2 Vishay Semiconductors Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code

BA779

Contextual Info: BA779–2 Vishay Telefunken Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code

BA779

Contextual Info: BA779–2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol

8550 sot-23

Abstract: BA779 BA779S
Contextual Info: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

sot-23 diode m9

Contextual Info: BA779-2_ Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: BA779-2 VISHAY Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25° C Parameter Reverse voltage Forward current

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

BA779

Contextual Info: BA779–2 Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg

Contextual Info: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature

Contextual Info: BA779-2 VISHAY Vishay Semiconductors Dual RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg

BA779

Abstract: SOT-23 94
Contextual Info: BA779–2 Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range

BA779-2

Abstract: BA779
Contextual Info: T e m ic BA779-2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current

Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

Contextual Info: v tS H A Y _ BA779-2 ▼ Vishay Telefunken Silicon PIN Diodes Features • W ide freq ue n cy range 10 M Hz to 1 GHz Applications C urrent controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 2 5 °C

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

Contextual Info: BA779.BA779S V ï|P A f Vishay Telefu nken ▼ Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current

Contextual Info: BA779-2-V-GH www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual Series FEATURES • Wide frequency range 10 MHz to 1 GHz 3 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 APPLICATIONS

BA779-V-GH

Contextual Info: BA779-V-GH www.vishay.com Vishay Semiconductors RF PIN Diodes FEATURES • Wide frequency range 10 MHz to 1 GHz 3 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 APPLICATIONS • Current controlled HF resistance in adjustable

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

BA779

Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
Contextual Info: BA779 / BA779S VISHAY Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg

Contextual Info: BA779-2 VISHAY Vishay Semiconductors Dual RF PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz 2 Applications 3 1 Current controlled HF resistance in adjustable attenuators 1 2 3 18256 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.1 mg

T4AS

Contextual Info: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage