BA6 MARKING Search Results

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Contextual Info: Table o f Contents Introduction _ E le c tro n ic s • • Universal Data Transmission

intel nand flash

Abstract: 29f16g08 JS29F08G08CANB2 INTEL FLASH MEMORY 29F intel nand intel date code marking NAND Flash 448MB intel 29F JS29F16G08FANB1 29F08G08
Contextual Info: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Datasheet Product Features „ „ „ „ „ „ „ „ „ „ Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes)

Contextual Info: SpecTek Confidential and Proprietary 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes)

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

MT29F16G08

Abstract: MT29F8G08BAA MT29F4G08AAA mt29f16g MT29F8G08DAA Micron MT29F8G08 16G nand flash 16GB Nand flash 29f4g08 MT29F16G08FAA
Contextual Info: 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features Figure 1: • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes)

SpecTek flash

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

29f16g08

Abstract: intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel
Contextual Info: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks

ch340s

Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks

Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks

BA6A

Abstract: marking code d2c smd
Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks

Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/

WL 431

Abstract: 431 SMD CODE MARKING smd marking AB 6 PIN INFINEON PART MARKING smd transistor d4d RC-5 receiver transistor smd code marking 431 transistor SMD DK SMD CODE N10 smd code marking wl
Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1:

smd transistor marking HT1

Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

BZX84C75

Abstract: BZX84C4V3ET1 marking bb8 marking code bb6
Contextual Info: BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29C4G48MAZBBAKQ-48 IT

Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)

MT29F4G08ABA

Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

BA5 marking

Abstract: BZX84C8V2E plastic BA5 marking code marking code bb6 marking BA7 BA6 marking Zener Diode BA6 BZX84C2V4ET1 BZX84C3V0ET1 BZX84C3V3ET1
Contextual Info: BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

MT29F4G08ABA

Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,

BA7 marking

Abstract: plastic BA5 marking code BA6 marking BA5 marking plastic BA7 marking code BZX84C4V7ET1 BZX84C2V4ET1 BZX84C2V7ET1 BZX84C3V3ET1 BZX84C3V6ET1
Contextual Info: BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

plastic BA5 marking code

Abstract: SZBZX84 BZX84C3V6ET1G marking code bb6 marking code ba5 SOT23 MARKING BB1 marking ba5 SZBZX84CX plastic BA7 marking code BA6 marking
Contextual Info: BZX84CxxxET1G Series, SZBZX84CxxxET1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well