BA24 Search Results

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

ba244

Contextual Info: BA244 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100n V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100

DIODE BA244

Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Contextual Info: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline

BA244A

Abstract: BA243A
Contextual Info: BA243A, BA244A SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is

Contextual Info: BA243 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

Contextual Info: BA248 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage350 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition)2.0

Contextual Info: BA243S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

BA244A

Abstract: BA243A
Contextual Info: BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic band-switching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also

BA243A

Abstract: BA244A
Contextual Info: BA243A, BA244A SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is

Contextual Info: BA243A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

Contextual Info: BA244A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

BA244A

Abstract: ITT Intermetall BA243A
Contextual Info: ITT SEMICOND/ INTERMETALL SÜE D 4bûE711 DDGafiaT STI IISI T-cfM$ BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of

Contextual Info: BA245 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage350 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)100m

Contextual Info: BA244S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

S25FL256

Abstract: S25FL256SA S25FL256SAGMFI00 S25FL256SAG FL256SA fl256saif00 S25FL256S FL128S S25FL256* spansion S25FL256SAGMF
Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

FL256S

Abstract: SDR-80
Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet (Preliminary)

Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet (Advance Information)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet (Preliminary)

Contextual Info: S25FL128S and S25FL256S S25FL128S 128 Mbit 16 Mbyte S25FL256S 256 Mbit (32 Mbyte) MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O S25FL128S and S25FL256S Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

Contextual Info: S25FL127S 128 Mbit 16 Mbyte MirrorBit Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O Data Sheet (Preliminary) S25FL127S Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion®

BA-1212S1

Abstract: BA-0505S1 BA-0505S BA-0512S BA-0512S1 BA-053R3S BA-053R3S1 BA-1205S BA-1205S1 BA-1212S
Contextual Info: BA - 0.5 to 1 Watt Isolated DC-DC Converter SIL Series Single Output 1. Features : n 4 Pin SIL Package n Low Ripple and Noise n Input / Output Isolation 1000 Vdc n 100 % Burn-In n Input Filter with Internal Capacitor n Custom Design Available 2. Absolute maximum ratings:

RTV 105

Abstract: R5S72060W200FPV SH7206 AN7110 Nippon capacitors 8 905 958 460
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid