B80 DIODE Search Results

B80 c1500 bridge rectifier

Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
Contextual Info: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247

Contextual Info: STW9NB80 N - CHANNEL 900V - 0.85ft - 9.3A - TO-247 _ PowerMESH MOSFET ADVANCE DATA V dss TYPE STW 9N B80 • . . . . 800 V R D S o n < 1 .1 a Id 9.3 A TYPICAL RDS(on) = 0.85 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STP4NB80

Contextual Info: STP4NB80 STP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB5NB80 N - CHANNEL 800V - 1 ,8H - 5A - D^PAK PowerMESH MOSFET TYPE S TB5N B80 • . . . . . V d ss R d S o ii Id 800 V < 2.2 Q. 5 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6Î2 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE S TP3N B80 STP3N B80FP • . . . . V dss RDS on Id 800 V 800 V < 6.5 Q. < 6.5 Q. 2.6 A 2.6 A(ÙÙ) TYPICAL R D S (on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

mss60

Abstract: Metelics MSS60-841-E45 MSS60,444-E45 B10B b20 diode 448-E45 848-B80
Contextual Info: MSS60,000 Series Extra High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS60,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

29LV016

Contextual Info: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM 29LV 016T-80-90 i 2/M BM 29LV 01 6B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

S14K275

Abstract: S20K680 S20K300 S10K250 S14K300 S14K385 S14K550 S20K550 710 svp 180 16 S20k175
Contextual Info: 1954-2012:QuarkCatalogTempNew 9/11/12 8:50 AM Page 1954 OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Varistors and Surge Voltage Protectors Metal Oxide Varistors Typical Protection Applications: ᭤ Protection of Semiconductors Diodes, Transistors, Thyristors, ICs, Etc.

VTE3175L

Abstract: VTE3176L
Contextual Info: SbE D m 3030bG^ 0DD1EE1 GaAIAs Infrared Emitting Diodes VTE3175L, 3176L Coax Package w/ Cathode Lead — 880 nm 8. E G bb^ H V C T _ G VACTEC T ~ 4 \ “ J3 PACKAGE DIMENSIONS inch mm DESCRIPTION CASES COAX HERMETIC (WITH CASE LEAD) CHIP SIZE: .011 ’ *.011"

Contextual Info: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds

B125

Abstract: B380 B380C1500G B40C1500G C1500G JESD22-B102D J-STD-002B 600-1000V B80 diode
Contextual Info: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds

B80 diode

Contextual Info: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

Contextual Info: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "

B40C800DM

Abstract: B125 B380C800DM JESD22-B102D J-STD-002B B80 diode B80C800DM
Contextual Info: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder Dip 260 °C, 40 seconds ~ • Component in accordance to RoHS 2002/95/EC

B125

Abstract: B380 B380C1000G B40C1000G JESD22-B102D J-STD-002B B80 diode
Contextual Info: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds

Contextual Info: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC

B80 diode

Contextual Info: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

Contextual Info: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

B125

Abstract: B380 B380C800G B40C800G JESD22-B102 J-STD-002 B125 bridge diode b40 diode B40 bridge diode
Contextual Info: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

10SP005

Abstract: bridge B250 C5000 B125 bridge diode "Bridge Rectifiers" b380 b40 bridge rectifier B250 Bridge Rectifiers KBL08 diode bridge B250 bridge diode B80 diode zener diode cross reference
Contextual Info: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SIN G LE PHASE BR ID G E R E CT IFIERS continued 3.0 IMA) PGK TYPE KBPC1 VRRM (volts) f 4.0 6.0 5.0 BC KBU KBPC6 50 KBPC1005 B40 C3700/2200 KBL005 ff KBU4A RKBU4A B40 C5000/3300 KBU 6A# KBPC6005 RKBPC6005

B40C800DM

Abstract: B80C800DM
Contextual Info: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC

VTE1261W

Abstract: VTE1262W
Contextual Info: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )