P011R Search Results

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU6NA100

Contextual Info: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

STU6NA90

Contextual Info: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

STU11NB60

Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A Max220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STU11NB60 600V < 0.6Ω 11 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STU10NB80

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU7NA90

Abstract: sd 50 diode
Contextual Info: STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA90 900 V < 1.3 Ω 7A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

0413A

Abstract: STU13NC50
Contextual Info: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU16NC50

Contextual Info: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: STU7NB100 N - CHANNEL 1000V - 1.2 ft - 7.3A - Max220 _ PowerMESH MOSFET PRELIM IN ARY DATA TYPE S T U 7N B 1 00 . . . . . . . V dss RDS on Id 1000 v < 1.5 a 7.3 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

u16nb50

Abstract: STU16NB50
Contextual Info: STU16NB50 N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Max220

Abstract: STU7NB90 STU7NB90I
Contextual Info: STU7NB90 STU7NB90I N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STU7NB90 900 V < 1.45 Ω 7.3 A STU7NB90I 900 V < 1.45 Ω 7.3 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STU26NM50 STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STU26NM50 STU26NM50I n n n n n VDSS RDS on ID 500V 500V < 0.120Ω < 0.120Ω 26 A 26 A TYPICAL RDS(on) = 0.01Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STU11NB60

Contextual Info: STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU11NB60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.6 Ω 11 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

china schematic diagram

Abstract: STU7NB90
Contextual Info: STU7NB90  N - CHANNEL 900V - 1.2Ω - 7.3A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU7NB90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.45 Ω 7.4 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

U8NA80

Abstract: STU8NA80 8A320
Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U8NA80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.0 Ω 8.3 A TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

U14NA50

Abstract: STU14NA50
Contextual Info: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STU16NB50

Contextual Info: STU16NB50 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU16NB50

Contextual Info: STU16NB50 N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE STU16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU13NC50

Contextual Info: STU13NC50 N-CHANNEL 500V - 0.31Ω - 13A Max220 PowerMesh II MOSFET TYPE STU13NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.4 Ω 13 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STU9NA60

Abstract: sd 50 diode
Contextual Info: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU9NA60 600 V < 0.8 Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STU9NB80

Contextual Info: STU9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS on ID STU9NB80 800 V <1Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

DD 128 D transistor

Abstract: STU8NA80 8a320
Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU8NA80 800 V < 1.0 Ω 8.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STU10NC70Z

Abstract: STU10NC70ZI
Contextual Info: STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU10NC70Z STU10NC70ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY

u16nb50

Abstract: u16nb STU16NB50
Contextual Info: STU16NB50  N-CHANNEL 500V - 0.28Ω - 15.6A-Max220 PowerMESH MOSFET TYPE ST U16NB50 • ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.33 Ω 15.6 A TYPICAL RDS(on) = 0.28 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES