B7E4S40 Search Results
B7E4S40 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DD13337Contextual Info: 5ÖE D • b 7 5 4 2 4 0 G G 1 3 3 3 b BbO « O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM27C256HZB -r-^/s-as" 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory. |
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MSM27C256HZB 768-Word MSM27C256HZB MSM27G256HZB 28-pin 32-lead MAX525 MAX184 DD13337 | |
Contextual Info: O K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX DODbST? T-S2 -13.-0 °I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays w ith up to 8 grids w ith 35 anodes dots plus 5 annunciators. The |
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24E40 MSC7125-XX MSC7125-XX 16-bit T--52--13-09 | |
18-PIN
Abstract: 26-PIN ZIP20-P-400 MSM OKI
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MSM511001B 576-Word MSM511001B b724S40 L724240 18-PIN 26-PIN ZIP20-P-400 MSM OKI | |
Contextual Info: K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX OODbST? T-SZ-13>-0°I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays with up to 8 grids with 35 anodes dots plus 5 annunciators. The |
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24E40 MSC7125-XX MSC7125-XX 16-bit b724240 T-52-13-09 | |
Contextual Info: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology. |
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MSM514280 144-Word 18-Bit MSM514280/SL 18-bit cycles/128ms | |
Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology. |
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MSM5141OOB/BL 304-Word MSM514100B/BL cycles/16ms, cycles/128ms MSM514100B/BL | |
MAX184
Abstract: MAX525 MSM27C256HZB
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242M0 001333b MSM27C256HZB 768-Word MSM27C256HZB 28-pin 32-tead MAX184 MAX525 | |
DIN 32 676Contextual Info: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 154 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT CM O S ELECTRICALLY ERASABLE & PROGRAMABLE ROM GENERAL DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and program m able read only m emory |
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MSM28C64A MSM28C64ARS 312ps/byte. b72424Q MSM28C64A T-46-13-27 b7E4S40 DIN 32 676 | |
TSCC 1100
Abstract: SI03
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b75424o 001347b MSM514252 144-Word MSM514252 TSCC 1100 SI03 | |
65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
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b72424D 13TB7 MSM65524/65P524 MSM65524 nX-8/50 10MHz MSM65P524, E424D 65P524 SFT 352 0040H MSM65P524 TI OAE | |
Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible. |
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MSM56 V16160 288-Word 16-Bit MSM56V16160 cles/64 | |
6724
Abstract: B754 87424
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7242MD 0DDB73M MSC2310YS9/KS9_ MSC2310YS9/KS9 MSM411000JS) MSM411000JS; 6724 B754 87424 | |
DG240-2
Abstract: NCMOS MSM6577 MSM6577-XX
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MSM6577-XX_ MSM6577 MSM6577-XX DG240-2 NCMOS MSM6577-XX | |
diode 6b3Contextual Info: O K I electronic components QL392N-03, QL3492N-03 1.3 |im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-03 and OL3492N-Ü3 are 1.3 |iin, MQW InGaAsP/InP laser-diode coaxial modules with single-mode fiber pigtails. These modules are optimal light sources for optical subscriber loops and |
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QL392N-03, QL3492N-03 OL392N-03 OL3492N-Ã OL391N-03, OL3492N-Q3 OL392N-03 L72M2MG OL391N-Q3, diode 6b3 | |
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