B75 DIODE Search Results

F 407 Diode

Abstract: BBY31 BBY31 philips semiconductor SOT23 N1 "Variable Capacitance Diode"
Contextual Info: Philips Semiconductors_ • b b 5 3^31 □D5bl4l4D b75 W A P X Product specification Variable capacitance diode BBY31 b^E T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a m icrom iniature SOT23 envelope. It

abb contactor b9 30 10

Abstract: IEC 158-1 VDE 0660 ABB EH550 contactors B75 contactor ABB ABB contactor B50 ABB EH300 Contactors abb EH700 B40 contactor ABB abb b12 contactor ABB EH175 Contactors
Contextual Info: Across the line contactors Type A, B & EH 1 B9 – B75, A95 – A110 • • • • • • • • • • • • • • • • • • • • AC 1000 – 2/97 • CONTACTORS: Selection: 1.4 - 1.7 EH145 – EH800 Maximum UL/CSA horsepower ratings • Maximum UL/CSA horsepower ratings

NDL5003D

Abstract: NDL5003D1
Contextual Info: - 30 E D • b4 B75 S5 QQ^ERE 7 ■ N E C ELECTRONICS INC T'HI-O1? LASER DIODE J_NDL5003D 1 300 nm OPTICAL FIBER COM MUNICATIONS InGaAsP DC-PBH LASER DIODE D E SC R IPT IO N N D L 5 0 0 3 D is a 1 3 0 0 nm laser d io d e especially desig n ed fo r lo n g d ista n c e high c a p a c ity tra n sm issio n sy stem s. T h e DC-PBH

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7^4142 IRF840/841/842/843 IRFP440/441 /442/443 D017323 b75 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R ds <on Im p ro ve d in du ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te cell stru ctu re

Contextual Info: LA-601 BL Series F / Light Emitting Diodes LA-601 BL Series High-Efficiency Numeric Displays » LA-601 B L v ' J - X ' T ' l i , Dimensions Unit : mm I 'ilp f t T ' LED « fe , H fe , S fe , S e rie s iC iD x . T î i Ü S ® # f e f e f L A -6 0 1 BL

54B65

Abstract: 596B5
Contextual Info: MLX90121 13.56MHz RFID Transceiver Features and Benefits 1 1 1 1 Applications 1 Conforms with ISO14443B Conforms with ISO15693 Programmable encoder and decoder Low external component count (1) RATP / Innovatron 1 1 1 1 Portable data terminals Access control readers

Contextual Info: SK50GH065F $ - ./ 01        Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- .  % IGBT Module

Contextual Info: SK50GH065F $ - ./ 01        Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:;  455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- .  % , - =55 ,> ,&2 ? .5 ,>

SK50GH065F

Contextual Info: SK50GH065F $ - ./ 01        Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- .  %  , - =55 ,> ,&2 ? .5 ,>

SK50GH065F

Contextual Info: SK50GH065F $ - ./ 01        Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:;  455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- .  % , - =55 ,> ,&2 ? .5 ,>

nec 501 t

Abstract: NDL7800P iei-1209
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NDL7800P, NDL7801P 1 310 nm InGaAsP STRAINED MQW LASER DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL7800P and NDL7801P are 1 310 nm strained Multiple-Quantum Well MQW laser modules with single mode fiber (SMF) pigtail. NDL7800P is packaged in ceramic and NDL7801P is packaged in plastic.

Contextual Info: MITSUBISHI -CDGTL L O GI C! b S l4ciñ27 0 D 1 S 2 5 7 b MITSUBISHI ASTTLs & M74AS832BP 7 -V 3 -ÏS HEX 2-IN PU T OR DRIVER 6249827 MITSUBISHI CD G T L LOGIC DESCRIPTION Th e M 74A S 832B P is a sem iconductor integrated circuit 91D D PIN CONFIGURATION TOP VIEW)

CD3045

Abstract: 5 volts ZENER DIODE 10 -50mA cd3016b CD3029B CD3017B CD3018B CD3019B CD3020B CD3021B CD3022B
Contextual Info: CD3016B 1 WATT ZENER DIODE CHIPS thru ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD3045B 1 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS O perating Tem perature: -65°C to +175DC

Contextual Info: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

S-808b

Abstract: S808B
Contextual Info: M ITSUBISHI ASTTLs M 74A S808B P HEX 2-IN PUT AND DRIVER DESCRIPTION The M 74A S 808B P is a sem iconductor integrated circuit PIN CONFIGURATION TOP VIEW — w — consisting of six 2-input positive-logic A N D buffer gates, usable as n egative-log ic OR buffer gates.

54527p

Abstract: M54527
Contextual Info: M I T S U B I S H I B IP O L A R D IG I T A L ICs M54527P 6 -U N IT 150mA DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran­ sistors connected to form high current gain driver pairs.

ym 238

Abstract: IC P 621
Contextual Info: LA-621 AK Series ' C ' t — F / Light Emitting Diodes LA-621 A K S e rie s Two color High Luminance LED Numeric Displays • W f i N f & E I / D im e n s io n s U n i t : m m LA-621 IC x -tf-f > i n t 2 6 S 3 t *s, m om Series LA-621AK represent 2-color,

LC125A

Abstract: 54661P
Contextual Info: M IT S U B IS H I BIPOLAR DIGITAL ICs M 54661P 4 -U N IT HIGH VO LTAG E 1.5A DA RLIN G TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54661P, 4-channel sink driver, consists of 4 PNP and 3 NPN transistors to from four high current gain driver pairs.

Transistor TT 2140

Abstract: npn transistor w27 b24jf 251C M54526P bipolar power transistor driver circuit bipolar dc clamp
Contextual Info: b 2 4 clflB 7 b3E D 0M 11D M IT S U B IS H I DGTL 51? H n iT 3 M ITSUBISHI BIPOLAR DIGITAL ICS M54526P LOGIC 7-U N IT 500m A DARLINGTON TR A N S IS TO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54526P, 7 -ch an n e l sink driver, consists of 14 N PN tran ­

m54561

Contextual Info: M ITS U B IS H I B IP O L A R D IG IT A L ICs M54561P 7 -U N IT 300m A SOURCE T Y P E DA RLIN G TO N T R A N S IS T O R ARRAY W ITH C L A M P DIODE DESCRIPTION The M54561P, 7-channel source driver, consists of 7 PNP and PIN CONFIGURATION TOP VIEW TJ- 14 NPN transistors connected to form high current gain driv­

M54527P

Abstract: transistor bipolar driver schematic
Contextual Info: t>3E • MITSUBISHI BIPOLAR DIGITAL ICs b24Tfl2? 0 0 1 4 ^ 3 22b ■ M I T 3 M 54527P MITSUBISHI DGTL LOGIC 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran­ PIN CONFIGURATION (TOP VIEW)

ZENER B18

Abstract: b18 zener
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

Contextual Info: • b3E bSMTôS? DGlSlMb MITSUBISHI D6 TL D4 T ■ M I T 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M54594P LOGIC 4 -U N IT HIGH VO LTAGE 1.5A D ARLINGTON T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54594P 4-channel sink diver, consists of 8 NPN tran­

BZX55

Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.