B7 TRANSISTOR Search Results

P82B715TD

Abstract: 82B715 P82B715PN P82B715 P82B96 PCA9515 PCA9516 10XI2C P4-11
Contextual Info: Philips Semiconductors P82B715 I2C Bus Extender Chip P8 7 2B Description 15 The 82B715 is an analog bipolar integrated circuit intended for application in I2C bus systems. 2 P8 2 P8 B7 B7 While retaining all the operating modes and features of the I2C system it permits extension of the practical separation distance

transistor 2N2222 PHILIPS

Abstract: 2N2222 82B715 P82B715 P82B715PN P82B715TD P82B96 PCA9515 PCA9516
Contextual Info: Philips Semiconductors P82B715 I2C Bus Extender Chip P8 7 2B Description 15 The 82B715 is an analog bipolar integrated circuit intended for application in I2C bus systems. 2 P8 2 P8 B7 B7 15 While retaining all the operating modes and features of the I2C system it permits extension of the practical separation distance

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

Contextual Info: B7 9-9 7 2N3993, 2N3993A P-CHANNEL SILICON JUN CTIO N FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 2 5 'C • CHOPPERS • HIGH SPEED COMMUTATORS Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

Contextual Info: LA-B7 Series 1t.2 09 .40 ~ 10.16 (2.29) L I r Dimensions are for reference use only. Contact IERC tor dimensions with tolerances or standard part drawings LA-B2 Series ~ '{J 100 110 ~ LATO127B2CB - w/TIP-29C ~ 80 60 70 TRANSISTOR DESCRIPTION OF CURVES 1Z

Transistor 8c4

Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345
Contextual Info: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily

Contextual Info: Philips Semiconductors ^ A U E • bbS 3 T 31 0 0 2 b 017 bb^ ■ APX R PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product specification b7 E PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION c High voltage NPN transistor in a

SVT60-5

Abstract: 2N5326 OTC2220 OTC2420 OTC242Q svt80 SVT60
Contextual Info: b7^asaa 4flE D OPTEK TECHNOLOGY INC oaoiBfit, I OTK sst ü g jjU H b K Product Bulletin OTC2420 August 1990 " T Z G - »«1 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits

2SC2116

Abstract: TRANSISTOR S 813
Contextual Info: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323

siemens simatic op17 manual

Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
Contextual Info: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation

BFQ290

Abstract: BFQ291
Contextual Info: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector

Contextual Info: DTD123EK/DTD123ES/DTD123EF DTD123EL/DTD123EA/DTD123EV / T ransistors DTD123EK/DTD123ES/DTD123EF DTD123EL/DTD123EA/DTD123EV JO, Vr • • V: v qi -r 7 sv JS tartiK h 7 > y ^ ^ b7 > y xy ^/T ran sisto r Switch Digital Trasnistors (Includes Resistors) /Dim ensions (Unit : mm)

sem 2106

Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

2SC4672

Contextual Info: h ~ 7 > y 3 > $ / T ransistors 2SC4672 i t ’ ^ y T fr -f Is - j - M NPN y ‘j 3 > Epitaxial Planar NPN Silicon Transistor 2SC 4672 b7> Freq. Power Amp. • ft* • £tfl£\t~j&III/Dimensions Unit : mm 1 ) V c e (sat) V ce (sat)= 0.35V (Max.) l.6±0.l

Contextual Info: P h ilip s S e m icon du ctors • bbSB'lBl DDSM'IST ^b7 H A P X N ANER PHILIPS/DISCRETE b?E D' NPN general purpose transistor FE A T U R E S Product specification BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. S i _ EL DESCRIPTION NPN transistor in a plastic SOT323

mje 3003

Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
Contextual Info: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures

philips HFE 4541

Abstract: BFT25A transistor BF 502 BFS25A B 0934 transistor BF 52 Transistor BF 479 t
Contextual Info: Philips Sem iconductors bbS 3 T 31 N AMER 0 0 2 5 2 7 7 T O fl ^M APX P H IL IP S /D IS C R E T E Product specification b7 E NPN 5 GHz wideband transistor FEATURES BFS25A PIN CONFIGURATION PINNING • Low current consumption PIN • Low noise figure DESCRIPTION

Contextual Info: Prelim inary specification P h ilip s S e m icon du ctors -3 3 -S 7 PNP HDTV video transistor PHILIPS INTERNATIONAL SbE » 711DflSh D D M S b7 3 ST7 « P H I N PINNING FE A T U R E S DESCRIPTION PIN • High breakdown voltages 1 collector • High gain bandwidth product

Contextual Info: UMB9N/IMB9A b ÿ ' s y Z Ç /Transistors UMB9N IMB9A 7 -f V U - T 7 K5 ~ ;i/ K t-V W 7./Isolated Mini-Mold Device V 'J =l>b7>i/7.2 X y ? 4 7 Epitaxai Planar PNP Silicon Transistor Includes Resistors) •f h 7 Kv-f/^/Inverter Driver i+Jfi^Sill/Dim ensions (Unit : mm)

MC100E163

Abstract: MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2
Contextual Info: MC10E163, MC100E163 5VĄECL 2ĆBit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 – A7, B0 – B7) is propagated to the output.

MC100E163

Abstract: MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2
Contextual Info: MC10E163, MC100E163 5VĄECL 2ĆBit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 – A7, B0 – B7) is propagated to the output.

Contextual Info: MC10E163, MC100E163 5V ECL 2-Bit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 − A7, B0 − B7) is propagated to the output.

Contextual Info: MC10E163, MC100E163 5V ECL 2-Bit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 − A7, B0 − B7) is propagated to the output.