T172A Search Results

74153 mux

Abstract: 82c822 Opti chipset 82C465 pin diagram of 74153 81 pin out diagram of 74138 ic 82C465MV ic 74138 Cyrix 486 dx2 IC 3-8 decoder 74138 pin diagram
Contextual Info: OPTi 82C465MV/MVA/MVB Single-Chip Mixed Voltage Notebook Solution Data Book Revision 2.0 912-3000-016 April, 1995 Copyright Copyright 1995, 1996, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed,

BLV91

Abstract: philips capacitor 021 IEC134 sot172 TRIMMER
Contextual Info: bSE D • 711Dû5b 0Qb3G21 715 H P H I N BLV91 PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N sil icon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M H z band. Features: • multi-base structure and diffused emitter-ballasting resistors fo r an optim um tem perature profile

BLV91

Contextual Info: N AMER P H IL IPS/DISCRETE bTE » □ 02*1124 4S I BLV91 1 ^ 5 3 ^ 3 IAPX I U.H.F. POWER TRANSISTOR N-P-N s ilico n planar e p ita xia l tran sisto r designed fo r use in m ob ile radio tra n sm itte rs in th e 900 M Hz band. Features: • m ulti-base stru ctu re and diffu sed em itte r-b a lla stin g resistors fo r an o p tim u m te m p e ra tu re p ro file

BLV91

Contextual Info: bSE D m 7110ÛSb OObaDSl PHILIPS 715 H I P H I N BLV91 INTERN A T I O N A L U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 9 0 0 M H z band. Features: • multi-base structure and diffused emitter-ballasting resistors for an optim um temperature profile

Contextual Info: Prelim inary specification P h ilip s S e m icon du ctors -3 3 -S 7 PNP HDTV video transistor PHILIPS INTERNATIONAL SbE » 711DflSh D D M S b7 3 ST7 « P H I N PINNING FE A T U R E S DESCRIPTION PIN • High breakdown voltages 1 collector • High gain bandwidth product

Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and