B50N Search Results

IS-B50LN-C2

Abstract: IS-B50NX-C2 IS-50NX-C2-MA dsxl IS-50NX-C2 IS-50NX-C2-ME IS-B50LN-C2-MA IS-B50LN-C2-ME DSXLMA LP-BTR50NFF
Contextual Info: Times Protect versus POLYPHASER COMPETITIVE CROSS – REFERENCE POLYPHASER Times-Protect™ IS-B50LN-C2 IS-B50NX-C2 IS-NEMP-C2 LP-BTR50NFF “ “ IS-B50LN-C2-MA IS-50NX-C2-MA IS-NEMP-C2-MA LP-BTR50NMS “ “ IS-B50LN-C2-ME IS-50NX-C2-ME IS-NEMP-C2-ME

Contextual Info: B50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

871F-N65BP80-H2

Abstract: 871F-D70NP50-D4 871F-D70NN50-D4 871F-N65BP80-N4 871F-P50BN80-T4
Contextual Info: Inductive Proximity Sensors Bulletin 871F Flat Pack and Block Styles Description Features Styles Bulletin 871F inductive flat pack and block style proximity sensors are self-contained, solid state devices. These devices are designed for most applications where it is required to

Contextual Info: CUSTOMER TERMINAL RoHS L E A D P b -F R E E S n 96% , Ag4% Yes Yes more than you expect WE IVidcam TERM. NO. s FOR REF. ONLY W U RTH ELEKT R O N IK ELECTRICAL SPECIFICATIONS 25°C u n le ss oth erw ise n oted: .600 MAX. [1 5 .2 4 ] .450 MAX. [1 1 .4 3 ]

precision Absolute Value Circuit

Abstract: AD708 Absolute Value Circuit AD707 AD708J AD708S
Contextual Info: ANALOG D EV IC ES_ FEATURES Very High dc Precision 30 iV max Offset Voltage 0.3[iV/°C max Offset Voltage Drift 0.35nV p-p max Voltage Noise (0.1 to 10Hz 5 Million V/V min Open Loop Gain 130dB min CMRR 120dB min PSRR Matching Characteristics

PCH200EG

Abstract: pch200ER PC200TWRG1 PC200TR5
Contextual Info: a?E j> LEDTRONICS üeiTiimn LEDTRONICS,Inc 5453705 0000320 7 • -"P 4 /-Z 2 » RIGHT ANGLE MOUNT- DIFFUSED £ CLEAR T O 5mm PC BOARD LEDs Model PC19Q/200 HI-EFF/ULTRA/BIC0L0R5/RESIS FEATURES: X RIGHT ANGLE MOUNT AT 0.25" CEN TERS. S ID E STACKABLE X CHOICE OF LED S: STD RED, H I-E F F IC , ULTRA TO 3000MCD,

b50ne10

Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

B50NE10

Abstract: STB50NE10T4 JESD97 STB50NE10 47S25
Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

40XA

Abstract: NE521
Contextual Info: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products DESCRIPTION FEATURES The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic

Contextual Info: T H I S COPY I S PROVIDED ON A RESTRICTED B A S I S AND I S NOT TO BE USED NOTES: D IA M E T E R D I M E N S IO N SHOWN FOR REFERENCE ONLY. 2, D IM E N S IO N S IN BRAC KETS I I ARE E N G L I S H . 2 , FOR PART NUMBERS AND LENGTHS OTHER THAN THOSE SHOWN, CONTACT YOUR P A N D U IT S A L E S

STB50NH02LT4

Abstract: STB50NH02L B50N
Contextual Info: B50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE B50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

SUB50N06-18

Abstract: B50N SM48a SUB50N06 sm48
Contextual Info: T e m ic SUP/B50N06-18 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (Q ) Id (A) 60 0.018 48 D Q TO-220A B o T O -263 I— 1 o D R A IN c o n n ected to TAB G D S Top View Ô s

STB50NH02L

Abstract: STB50NH02LT4
Contextual Info: B50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE B50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: 20 Watt NT Series F e a tu re s • Fully Self Contained, No External Parts Required for Operation iip?%7 •, I L iT '/r * - TP- !, ■ High Power Density, Up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85%

MOTOROLA p6ke

Abstract: B50NT 24D15.700NT 1700N Calex ld317 220 volt ac to 12 volt dc CONVERTER DIAGRAM
Contextual Info: 20 Watt NT Series F e a tu re s • F ully S elf C ontained, No E xternal Parts R equired fo r O peration ■ H igh P ow er D ensity, Up to 11 W atts p e r C ubic Inch ■ Low and S pecified Input/O utput C apacitance ■ E fficiencies to 85% ■ O ve rcu rre n t P rotected and T herm al S hutdow n

FSCR506Y

Abstract: FSCL912Y F0CRX06Y F0CRX12Y
Contextual Info: T H IS COPY IS PROVIDED ON A RESTR IC TED B A S IS AND WATER-BLOCK I N G 5TRENGTH MEMBERS IS NOT TO BE USED INTERESTS OF PA N D U IT CORP. NOTES: 1. DIAMETER D IM E N S IO N , SHOWN FOR REFERENCE ONLY. 2 . D IM E N S IO N S IN BRACKETS I I ARE E N G L IS H .

B50NE1

Abstract: b50ne
Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t