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STMicroelectronics


STMicroelectronics STB50NE10L Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	STB50NE10L		40		1	1 $4.56 10 $2.96 100 $2.28 1000 $2.28 10000 $2.28	Buy Now
STMicroelectronics STB50NE10T4 Power Field-Effect Transistor, 50A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	STB50NE10T4		11,146			1 - 10 - 100 - 1000 - 10000 -	Get Quote

B50NE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: B50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC	Original	stb50ne08 b50ne08 o-263	PDF
b50ne10 Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10 Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization	Original	stb50ne10 b50ne10 b50ne1 stb50ne10t4 +2b50n jesd97	PDF
B50NE10 Abstract: STB50NE10T4 JESD97 STB50NE10 47S25 Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization	Original	stb50ne10 b50ne10 stb50ne10t4 jesd97 +147s25	PDF
B50NE1 Abstract: b50ne Contextual Info: B50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID B50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t	Original	stb50ne10 b50ne1 b50ne	PDF