B50 DIODE Search Results

b50 diode

Abstract: DIODE B50
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES HL-PT-1608H181W-B50-04 WHITE Features •1.6mmX0.8mm SMT LED, 0.4mm THICKNESS. Description •LOW POWER CONSUMPTION. The White source color devices are made with DH InGaN

Contextual Info: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

1mb50-090a

Abstract: ERD65-090 H150 1mb60-090
Contextual Info: ERD65-090 30A * ± 'J K rHi FAST RECOVERY DIODE : Features • ¡ftMJ± High Voltage • Low forward Voltage drop. #/jvgu/\°.y4-—v Small Package Connection Diagram : Applications • W /ifc&tg ®® Voltage Resonance Power Supply Induction Heater • 1M B50-090A, 1 M B 6 0 -0 9 0 £ *fc f# ffl

Contextual Info: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: STB10NB50 N - CHANNEL 500V - 0.55Î2 - 1 0.6A - D2PAK PowerMESH MOSFET TYPE STB 10N B50 • . . . . . V dss R d S o ii 500 V < 0.60 Q. Id 1 0.6 A TYPICAL R D S (on) = 0.55 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

sc06140

Abstract: powermesh mosfet STD3NB50
Contextual Info: Zjï SGS-THOMSON STD3NB50 ¡ILIOTI^OKinei N - CHANNEL 500V - 2.5 ÌÌ - 3A - IPAK/DPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STD 3N B50 500 V < 2.8 a 3 A • . . . . TYPICAL R D S ( o n ) = 2 . 5 EXTREMELY HIGH dv/dt CAPABILITY

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11 - 34 A - Max247 PowerMESH MOSFET TYP E V S TY34N B50 dss 500 V R d S o ii Id < 0 .1 3 Q. 34 A . . TYPICAL RDs(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING . 100% AVALANCHE TESTED

Contextual Info: • b 1353131 0024433 b50 « A P X N A HER PHILIPS/DISCRETE BBY42 b?E » J V V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 4 2 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended for use in v.h.f. T V tuners and C A T V applications using S M D technology.

3NB50

Contextual Info: SGS-THOMSON M TO »« STD3NB50 N - CHANNEL 500V - 2.5Q - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE STD 3N B50 • . . . . V dss RDS on Id 500 V < 2.8 Q 3 A TYPICAL RDS(on) = 2.5 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD1NB50 N - CHANNEL 500V - 7.5Î2 - 1 ,4A - IPAK PowerMESH MOSFET TYPE STD1N B50 V dss 500V Id R D S (o n ) < 9 Q. 1 .4 A . • TYPICAL RDS(on) = 7.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: STP10NB50 STP10NB50FP N - CHANNEL 500V - 0.55Î2 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S on Id S TP10N B50 S TP10N B50FP 500 V 500 V < 0.6 0 Q. < 0.6 0 Q. 1 0.6 A 1 0.6 A • . . . . TYPICAL RDS(on) = 0.55 £1 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5

15NB50

Abstract: 15N 50 mosfet SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: s = 7 SGS-THOMSON ^ 7# K l « iL iM ( s iO ( g S S T W 15N B 50 N - CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STW 15N B50 . m . . . . . V dss RDS(on) Id 500 V < 0 .3 6 Î2 14.6 A TYPICAL F tD S ( o n ) =0.33 £1 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: S G S -1H 0M S 0N M0 gfô l[L[i(3ra®«S STP9NB50 STP9NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V STP9N B50 STP9N B50FP dss 500 V 500 V R D S (o n Id < 0.8 5 Q. < 0.8 5 Q. 8 .6 A 4 .9 A . • TYPICAL R D S (on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SCHOTTKY BARRIER DIODE 151MQ30 151MQ40 166A/30— 40V FEATURES o Hermetically Sealed Case • High Reliability Device 0 Low Power Loss, High Efficiency # High Surge Capability MAXIMUM RATIN GS \ type Voltage Rating ♦ 151MQ40 + 151MQ30 Unit Symbol\ Repetitive Peak

50VF30

Abstract: 50VF30F 50VF40 50VF40F
Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~400V/trr : 40nsec FEATURES 2.38M AX .094 ° T0-251AA Case n TO-252AA Case, Surface Mount Device • Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss » High Surge Capability

Contextual Info: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode

dd 76 N powerblock

Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
Contextual Info: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

SS2221

Abstract: e31a
Contextual Info: SILICON SW ITCHING DIODES 1SS222,1 SS223 HIGH SPEED SW ITCHING SILICON EPITAXIAL DIODES M IN I MOLD FE A T U R E S P A C K A G E D IM E N S IO N S in millimeters • L o w capacitance: Ct = 4 .0 pF M A X . • High speed sw itch ing: t rr = 3.0 ns M A X .

1N2046-1

Abstract: 1N1364 1N2048-1 1N1819 1N1826 1n260 1N1368 1N1604 1N1815 1N2041-1
Contextual Info: SEHICON COMPONENTS INC 2ÖE D • Ö135157 0000023 2 ■ ZENER DIODES 10.0 WATT RATING DO-4 TYPE NUMBER NOMINAL ZENER VOLTAGE <V2) VOLTS 1N1351 1N1352 1N1353 1N1354 1N1355 NOMINAL ZENER VOLTAGE MAX. ZENER IMPED­ ANCE MAX, ZENER CURRENT *ZT MAX. ZENER IMPED­

calculator chip

Abstract: DS8973N C1995 DS8973 N22A I-B0336
Contextual Info: DS8973 9-Digit LED Driver General Description The DS8973 is a 9-digit driver designed to operate from 3-cell battery supplies Each driver will sink 100 mA to less than 0 7V when driven by only 0 1 mA Each input is blocked by diodes so that the input can be driven below ground with

74LVX00

Abstract: 74LVX00M 74LVX00MTC 74LVX00MTCX 74LVX00MX 74LVX00SJ 74LVX00SJX LVX00 M14A M14D
Contextual Info: 74LVX00 Low Voltage Quad 2-Input NAND Gate General Description Features The LVX00 contains four 2-input NAND gates The inputs tolerate voltages up to 7V allowing the interface of 5V systems to 3V systems Y Y Y Y Logic Symbol Input voltage level translation from 5V to 3V

Contextual Info: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging