1SV52
Abstract: PN Junction Diode varactor GaAs varactor diode pn junction diode structure barrier varactor ND3101-5M noise diode power varactor varactor nec nec epitaxial varactor
Contextual Info: N E C/ CALIFORNIA 1SE D NEC b427M14 OOOnGM 2 G aA s VARACTO R DIO DE ND3101-5M FEATURES DESCRIPTION AND APPLICATIONS • H IG H C U T O F F F R E Q U E N C Y The ND3101-5M Is a GaAs epitaxial Schottky barrier varactor diode especially designed for low noise parametric amplifiers.
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b427m14gd011gmnd3101-5m1sv52+8pn junction diode varactorgaas varactor diodepn junction diode structurebarrier varactornoise diodepower varactorvaractor necnec epitaxial varactor
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2SC1253
Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for
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ms7414ne74000ne74014ne74020+7ne740e901152sc125792sc1253e74020vhf power transistor pnp to-39transistor 2sc 733
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2SA1224
Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de
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00gs512ne90100ne90115ne74014+4ne9012sa1224nec japan 31671s955
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18-12 049 transistor
Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Contextual Info: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:
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b427mmne9443218-12 049 transistork 1094 transistor+20dd25sis 1124
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