B3S3 Search Results

Contextual Info: nOSEL-VITELIC bSE ]> • b3S33Tl G0 Dlfl2ö b?b M M O V I V53C256A FAMILY HIGH PERFORMANCE, LOW POWER 2 5 6 K X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM MOSEL- VITELIC H IG H P E R F O R M A N C E V 5 3 C 2 5 6 A 6 0 /6 0 L 7Q /70L 8 0 /8 0 L 1 0 /1 0 L 60 ns

Contextual Info: SME T> b3S33^1 0001345 140 I MO V I MOSEL MS62256A PRELIMINARY 32K x 8 High Speed CMOS Static RAM M Q S E L -V IT E LIC FEATURES DESCRIPTION • High-speed - 25/30/35/45/55 ns The M OSEL M S62256A is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and

Contextual Info: MOSEL — VITELIC 4flE D MOSEL b3S33Tl Q O Q O i m MOVI 5 MS72215/16 & MS72225/26 ADVANCE INFORMATION 512 x 18 & 1024 x 18 Parallel Synchronous FIFOs FEATURES DESCRIPTION • Full C M O S clocked synchronous FIFO s The MS72215/16 and MS72225/26 are clocked registered FIFOs

Contextual Info: S4E D b3S33Tl DGQlbMB 1Ö4 MOSEL MS318000 ADVANCE INFORMATION 512K x 16,1 MEG x 8 CMOS Mask Mask Programmable ROM f! OSEL - VI T EL IC FEATURES The MS318000 is an 8 Mb CMOS Slgate maskprogrammable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8

Contextual Info: MOSAIC SEMICONDUCTOR INC 4DE D O b3S33?T 0000443 S HMOC T -4 Ù -J 3 -2 7 32K X 8 EEPROM MEM832V/J-85/10/12 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Pin Definitions 32,768 x 8 CMOS EEPROM Features A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Very Fast Access Times of 85,100,120 ns

386dx bios

Abstract: Non VGA Video Controller IC 486DX 486SX
Contextual Info: SME D MOSEL • b3S33Tl DDD171D S55 « M O V I MS400 Ì10SEL-VITELIC p r e lim in a r y 486SX / 486DX Single Chip AT "O S FEATURES DESCRIPTION • Direct Interface to 486SX/487SX or 486DX at speeds from 20-33MHz The MS400 is a highly integrated single chip AT opti­

Contextual Info: MOSEL-VITELIC MOSEL- VITELIC b2E D • b3S33^1 OQDEE'ïE T73 « M O V I V52C8255 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM PRELIMINARY 60 70 80 Max. RAS Access Time, tf^c 60 ns 70 ns 80 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns Max. Column Address Access Time, (tM )

MS628128

Contextual Info: MOSEL-VITELIC fc,2E ]> MOSEL-VITELIC • b3S33Tl QQQ25Q7 OTh ■ UOVI MS628128 1048576 131,072 x 8 CMOS STATIC RAM WITH DATA RETENTION AND LOW POWER ADVANCED INFORMA TION Features Description ■ Available in 8 0 /100/120 ns (Max.) ■ Automatic power-down when chip disabled

DIN 46238

Contextual Info: MOSAIC SEM IC ONDUCTOR INC S3E D b3S337T 0001370 ÔT1 IMOC 7 ^*4 6 -a s -1 \ molate f M e g x 4 M o n o tith ic D R A M Mosaic Semiconductor MDM41000-80/10/12/X0179 Issue 1.0: September 1992 ADVANCE PRODUCT INFORMATION 1,048,576 x 4 CMOS High Speed Dynamic RAM

Contextual Info: XRT83L30 SINGLE-CHANNEL T1/E1/J1 LH/SH TRANSCEIVER WITH CLOCK RECOVERY AND JITTER ATTENUATOR JUNE 2004 REV. 1.0.0 GENERAL DESCRIPTION The XRT83L30 is a fully integrated single-channel long-haul and short-haul line interface unit for T1 1.544Mbps 100Ω, E1(2.048Mbps) 75Ω or 120Ω

AIS-16

Contextual Info: XRT86SH328 VOYAGER - E1 FRAMER + LIU REGISTER DESCRIPTION MAY 2008 REV. 1.0.0 GENERAL DESCRIPTION The XRT86SH328 has a total of 42 independent E1 framers or 56 independent framers for T1 . This Voyager Device maps 21 E1 payloads up to STS-3/ STM-1. The purpose of the 42 framers is to allow

Contextual Info: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These

Contextual Info: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is

Contextual Info: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

220-1pseudo-random

Abstract: NC11 NC12 XRT83L38 XRT83L38IB XRT83L38IV microprocessor users manual
Contextual Info: XRT83L38 OCTAL T1/E1/J1 LH/SH TRANSCEIVER WITH CLOCK RECOVERY AND JITTER ATTENUATOR JUNE 2004 REV. 1.0.0 GENERAL DESCRIPTION The XRT83L38 is a fully integrated Octal eight channel long-haul and short-haul line interface unit for T1 (1.544Mbps) 100Ω, E1 (2.048Mbps) 75Ω or

68HC11

Abstract: NC11 NC12 XRT83L38 XRT83L38IB B8ZS* encoding
Contextual Info: XRT83L38 OCTAL T1/E1/J1 LH/SH TRANSCEIVER WITH CLOCK RECOVERY AND JITTER ATTENUATOR JUNE 2007 REV. 1.0.2 GENERAL DESCRIPTION The XRT83L38 is a fully integrated Octal eight channel long-haul and short-haul line interface unit for T1 (1.544Mbps) 100Ω, E1 (2.048Mbps) 75Ω or

dmo 365 r

Abstract: B4S2 XRT83L30 XRT83L30IV 75E11
Contextual Info: XRT83L30 SINGLE-CHANNEL T1/E1/J1 LH/SH TRANSCEIVER WITH CLOCK RECOVERY AND JITTER ATTENUATOR JUNE 2006 REV. 1.0.1 GENERAL DESCRIPTION The XRT83L30 is a fully integrated single-channel long-haul and short-haul line interface unit for T1 1.544Mbps 100Ω, E1(2.048Mbps) 75Ω or 120Ω

dmo 265

Abstract: T83L34
Contextual Info: XRT83L34 QUAD T1/E1/J1 LH/SH LIU WITH CLOCK RECOVERY AND JITTER ATTENUATOR SEPTEMBER 2007 REV. 1.0.2 GENERAL DESCRIPTION The XRT83L34 is a fully integrated Quad four channel long-haul and short-haul line interface unit for T1 (1.544Mbps) 100Ω, E1 (2.048Mbps) 75Ω or

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

7420 ic details

Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
Contextual Info: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data

Contextual Info: MOSEL-VITELIC bSE J> m M O S E L -V IT E L IC bBSBBTl ÜDD24Db 27e! « M O V I V404J232and V404J236 2M x 32 and 2M x 36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­

7202A

Contextual Info: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags