B34 TRANSISTOR Search Results

DIODE MOTOROLA B34

Abstract: MTD3055EL B34 ZENER DIODE DIODE B34 B34 motorola 369A-10 AN569 MTD3055EL1 Mq-7
Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA h SEMICONDUCTOR TECHNICAL DATA _ Designer's Data Sheet MTD3055EL TM OS IV Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate

DIODE MOTOROLA B34

Abstract: MTD3055EL B34 motorola 369A-10 AN569 MTD3055EL1
Contextual Info: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA m SEMICONDUCTOR _ TECHNICAL DATA MTD3055EL Designer's Data Sheet T M O S IV Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-Mode Silicon Gate

Contextual Info: MICRO LI NE AR 51E » • h Q T 3 4 1 ô □ Q G E 7 Ô 1 b34 ■ MLN Micro Linear ^ "uSICs FB3610, FB3620, FB3630 General Purpose Tile Arrays GENERAL DESCRIPTION FEATURES The FB3610, FB3620, and FB3630 are general purpose analog tile arrays capable of implementing a wide

Contextual Info: KENNEDY fl S CORP M ^K M.S. KENNEDY CORP. b 3E D 5134300 00001Ö2 HIGH POWER AMPLIFIER b34 • HSK 161 8170 Thompson Road • Cicero, N.Y. 13039 (315) 699-9201 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class “C” Output Stage

TCPA12

Abstract: 12.5W bypass transistor
Contextual Info: TELEDYNE C0I1P0NENTS i> m 3hE ôcil?bQ a 00Ü?b34 5 MfeTSC WTELEDYNE COMPONENTS 1468 TCPA12 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE, VERY-HIGH-POWER FEATURES GENERAL DESCRIPTION • ■ ■ The 1468 is a high-voltage, very-high-power opera­ tional amplifier. It can operate over a wide range of supply

b34 DIODE 412

Abstract: CM400HA-12E diode b34 BP107
Contextual Info: b4E D • 7 2 ^ 4 ^2 1 OODbbTfi b34 * P R X CM400HA-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ .14 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.1 P O W E R E X INC OUTLINE ORAWING

Contextual Info: bOE D • fl23Sb05 0D5G4bS b34 U S I E G EMENS SIEMENS AKTIEN6ESELLSCHAF TLE 4202 DC Motor Driver Bipolar 1C Features • Max. output current 3.0 A • Open-loop gain 80 dB typ. • PNP input stages • Large common-mode input-voltage range VPT0 5 1 0 8 • Wide control range

IF3601

Abstract: B34 transistor NJ3600L
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-34 B-34 01/99 IF3601 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 4 -JU N E 1996 FMMT589 _O _ I • FEATURES * Low equivalent on-resistance; RcE Mt 2 5 0 m ii a t 1A PARTMARKING DETAILS - 589 COMPLEMENTARY TYPE- FMMT489

B34 transistor

Abstract: t25E S03 pnp KSB811 KSD1021
Contextual Info: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current lc= -1 A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

8086 hex bcd assembler conversion

Abstract: 03F8-03FF 4-pin Mini DIN 80286 mouse bios call IBM THINKPAD 600 trident vga 80386 microprocessor interface keyboard mwave
Contextual Info: 05L1739 S05L-1739-00 Note Before using this information and the product it supports, be sure to read the general information under Appendix C, “Notices” on page C-1. First Edition December 1997 The following paragraph does not apply to the United Kingdom or any country

C3502

Abstract: C3502 e 2SC3502 n142 2SA1380 aatl
Contextual Info: O rdering num ber: EN1425C N0.1425C SAMYO ; 2SA1380/2SC3502 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications Features • High breakdown voltage : V qeo = 200V. • Small reverse transfer capacitance and excellent high-frequency characteristics :

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

Contextual Info: SIEMENS NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 • High breakdown voltage • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 SXTA 42 SXTA 43 1D 1E Q68000-A8394 Q68000-A8650 B E C Package1)

B34 transistor

Abstract: MPSH10 MPSH81 GHz PNP transistor transistor 911 transistor k 911
Contextual Info: Philips Semiconductors Product specification x>y7'& PNP 1 GHz switching transistor PHILIPS INTERNATIONAL FEATURES SbE D € MPSH81 711DfiEb QG4bD75 flbl B P H I N PINNING • Low cost • High transition frequency. PIN DESCRIPTION DESCRIPTION 1 collector 2

TRANSISTOR D 570

Abstract: BSS110 INFINEON BSS110 B34 transistor
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in

j3y transistor

Abstract: marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING 2SC4176 HIGH SPEED SWITCHING NPN N/j3y transistor
Contextual Info: SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURE PACKAGE DIMENSIONS in millim eters 2.1 • High Speed: t on < 12 ns t off < 18 ns + 0.1 1 .25+0.1 ABSOLUTE M AXIM UM RATINGS M axim um Voltages and Current T a = 25 °C

B34 transistor

Abstract: transistor p2a marking code B34 PMST3906
Contextual Info: • P h ilin ^Sem m ir niconductors n r in r t n r « P hilips ^53^31 □□ 2ST37 7 Tfl « A P X N AMER PHILIPS/DISCRETE P roduct specification b?E D PNP switching transistor FEATURES PMST3906 PIN CONFIGURATION • S-mini package • Short switching time.

Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94_ FEATURES * 160 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 W a tt c . f E-Line

b34 diode

Abstract: DIODE B34 B34 transistor DIODE ON SEMICONDUCTOR B34 NDB6030L B34 ZENER DIODE NDP6030L mjj transistor DIODE on B34
Contextual Info: Nationa I Semiconductor" June 1996 NDP6030L/ NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancem ent m ode pow er field effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS

L902

Abstract: 2SC3838K 2SC4083 T106 T107 T146 T147 FC 0137 ic lC 7520
Contextual Info: h "7 >V 7> £ /Transistors 2SC3838K/2SC4083 I t N P N Epitaxial Planar NPN Silicon Transistors ¡SJgj& igliffl/RF Amplifier 2SC3838K 2SC4083 • ^Hfé'íJ'i&EI/Dimensions Unit : mm 1) fT=3.2GHz (Typ.) 2SC3838K 2) Cc-fbb ¡F'M < ¡SflJiSo 2SC4083 2 .9 ± 0 .2

2SC3735

Abstract: hFE CLASSIFICATION Marking B35 2SA1462 b35 sc-59
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3735 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR <R> FEATURES PACKAGE DRAWING Unit: mm • High-speed switching 2.8±0.2 +0.1 0.4 –0.05 • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance

mx25l800

Abstract: K4X56163PN-FGC6 bt.656 to RGB888 DLP3000 H5MS2562 rgb888 656 H5MS2562JFR-J3M BT565 bt.656 parallel to serial conversion for vga camera samsung led monitor internal circuit diagram
Contextual Info: DLPC300 www.ti.com DLPS023A – JANUARY 2012 – REVISED JULY 2012 DLP Digital Controller for the DLP3000 DMD Check for Samples: DLPC300 FEATURES 1 • 23 • • • • • • Supports Reliable Operation of the DLP3000 DMD Multi-Mode, 24-Bit Input Port:

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to