B3 HO TRANSISTOR Search Results

Contextual Info: 3QE D • 7^537 GQE'HIS 3 m ^ - 2 P \ - ö 7 SGS-TfiOMSON IILliOTMt» 5 1 s6 s - SGSP201 thomson N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss SGSP201 100 V ^DS on 1.4 0 *D 2.0 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1224 2 S D 1 224 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 4000 (Min.)

ir2101 datasheet

Abstract: IR2101 IR2101 AN IR2101S MP150 B3 ho transistor
Contextual Info: Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout

A1402

Abstract: 25CC 2SA1402 T0126
Contextual Info: [~Ordering num ber: EN 1761B 2SA1402/2SC3596 PNP/NPN Epitaxial Planar Silicon Transistors U ltrahigh-D efinition CRT D isplay Video Output A pplications A p p licatio n s •Ultrahigh-definition CRT display. • Video output. • Color TV chroma output. • Wide-band amp.

BLW40

Abstract: MCD205 TLO 721
Contextual Info: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

DIODE ku 1490

Abstract: k 246 transistor 1.4901 bd135 equivalent
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM

ALU IC 74181 circuit diagram

Abstract: TTL 74189
Contextual Info: ]>î| G5S7S5b DOEIOOB 1 ADV MICRO P LA /P LE/A RR AY S 7h 0 2 5 7 5 2 6 ADV MICRO PLA/PLE/ARRAYS 76C 21003 T-42-11-09 A m 7 2 2 a Q 2200 Gate HCMOS Evaluation Macrocell Array & ¡ it PRELIMINARY > 3 •Vj DISTINCTIVE CHARACTERISTICS Delay measurement block:

BFS98

Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0

Contextual Info: International I R Rectifier Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

Contextual Info: www.fairchildsemi.com AN-9077 Motion SPM 7 Series User’s Guide Table of Contents 1 2 3 4 Introduction. 2 Application Example . 14 1.1. Design Concept .2

TB1220F

Abstract: BSH5
Contextual Info: TOSHIBA TENTATIVE TB1232F/FN TOSHIBA Bi-CMOS INTEGRATED CIRCUIT TR1733F • mmr m mm m g SILICON MONOLITHIC TR1333FN m mmr m v ■ ■ v 1.3GHZ 3-WIRE BUS CONTROL FREQUENCY SYNTHESIZER FOR T V /C A B LE TV The TB1232F and TB1232FN are single-chip frequency

Contextual Info: Panasonic CCD Area Image Sensor MN3762MAE 8mm 1/2 inch 71 OH CCD Area Image Sensor •Overview iPin Assignments The M N3762M AE is a 8mm (1/2 inch) frame interline Transfer CCD (FIT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion

Contextual Info: /T 7 7 £ S C S -T H O M S O N EintgisoiiLimtsiüintgs STV2162 2H - VIDEO SCANNING PROCESSOR PRO DU CT PREVIEW VIDEO PART • USER CONTROL FUNCTIONS : CONTRAST BRIGHTNESS, SATURATION, COLOR EQUALIZER ■ RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY/ TELETEXT

Contextual Info: International Iö R Rectifier Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 12 to 18V

4093 BP

Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
Contextual Info: i iriilk if^ B c lG l-c te n a n il-i Übersicht CMOS-Schaltkreise CMOS-IC’s Übersicht CMOS-Schaltkreise - CMOS-IC’s V4001 D V 4007 D V4011 D V 4012 D V 4013 D V4015D V4017D V4019D V 4023 D V 4027 D V 4028 D V 4029 D V 4030 D V 4034 D V 4035 D V 4042

20 pin IC AL 6001 audio ic

Abstract: IC AL 6001 audio ic 20 pin audio IC AL 6001 IC AL 6001 PAA 038 AL 6001 audio ic
Contextual Info: H A R R IS X HA-5147/883 Semiconductor 100MHz, Ultra Low Noise, Precision, High Slew Rate Operational Amplifier June 1998 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Contextual Info: S HA-2839/883 HARRIS SEMI C ON DU C T OR Very High S lew Rate, W ideband O perational Am plifier September 1993 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

IC AL 6001 audio ic

Abstract: 20 pin IC AL 6001 audio ic 20 pin audio IC AL 6001 AL 6001 audio ic
Contextual Info: 100MHz, Ultra Low Noise, Precision, High Slew Rate Operational Amplifier Ju n e 1 9 9 8 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. T h e H A -5 1 4 7 /8 8 3 monolithic operation al am plifier features

IC AL 6001 audio ic

Abstract: 20 pin IC AL 6001 audio ic IC AL 6001 transistor 5137 30554
Contextual Info: 60MHz, Ultra Low Noise, Precision Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The H A -513 7/88 3 monolithic operational amplifier features

Contextual Info: ff HA-2548/883 H A R R IS S E M I C O N D U C T O R Precision, High Slew Rate, Wideband Operational Amplifier Features Description • This Circuit Is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2548/883 is a monolithic op amp that offers a unique

information applikation

Abstract: information applikation mikroelektronik "Mikroelektronik" Heft mikroelektronik Heft 12 Mikroelektronik Information Applikation mikroelektronik heft applikation heft mikroelektronik applikation DL374D VEB mikroelektronik
Contextual Info: LnnJQ[]=<3r D ö]ElE 3l"<t3r ,LJI lilK Information Applikation in r # ^ o s J e k t 3r» ariik Information Applikation Heft Saue * 35 I S aus dem K i O 1 9 8 6 i I I 1 I . . \mb Halhi^iterw r k frankfurt/odai» imvebkombin mücroatektrontoc wt KAMMER DER TECHNIK

Contextual Info: r Z Z ^ 7# L 7 8 m oo S E R IE S S G S -T H O M S O N HO@lfS lHICT!®!D<Bi POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT TO 0.5A • OUTPUT VOLTAGES OF 5; 6 ; 8 ; 9; 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTOR SOA PROTECTION