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B2VR Price and Stock
Microchip Technology Inc APT6011B2VRGMOSFET N-CH 600V 49A T-MAX |
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APT6011B2VRG | Tube | 30 |
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APT6011B2VRG | Bulk | 20 Weeks | 30 |
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APT6011B2VRG | 1 |
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APT6011B2VRG | 30 |
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APT6011B2VRG | 22 Weeks | 1 |
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APT6011B2VRG | 21 Weeks | 1 |
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Microchip Technology Inc APT5010B2VRGMOSFET N-CH 500V 47A T-MAX |
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APT5010B2VRG | Tube | 30 |
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APT5010B2VRG | Bulk | 20 Weeks | 30 |
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APT5010B2VRG | 27 |
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APT5010B2VRG | 1 |
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APT5010B2VRG | 22 Weeks | 1 |
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APT5010B2VRG | 21 Weeks | 1 |
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APT5010B2VRG | 3,919 |
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Microchip Technology Inc APT5014B2VRGMOSFET N-CH 500V T-MAX |
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APT5014B2VRG | Tube |
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Microchip Technology Inc APT20M22B2VRGMOSFET N-CH 200V 100A T-MAX |
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APT20M22B2VRG | Tube | 27 |
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Microchip Technology Inc APT20M18B2VRGMOSFET N-CH 200V 100A T-MAX |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT20M18B2VRG | Tube | 30 |
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APT20M18B2VRG | Bulk | 20 Weeks | 30 |
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APT20M18B2VRG | 1 |
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B2VR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR | |
APT12060LContextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247 APT12060L | |
APT10050B2VFR
Abstract: APT10050LVFR
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APT10050B2VFR APT10050LVFR O-264 O-264 APT10050 O-247 APT10050B2VFR APT10050LVFR | |
diode 132Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 diode 132 | |
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Contextual Info: B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M18B2VR APT20M18LVR O-264 O-264 APT20M18 O-247 | |
APT50M85B2VR
Abstract: APT50M85LVR
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APT50M85B2VR APT50M85LVR O-264 O-264 APT50M85B2VR O-247 APT50M85LVR | |
diode 304
Abstract: 11200-1 B2VR 72 RG
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APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247 diode 304 11200-1 B2VR 72 RG | |
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Contextual Info: B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT50M85B2VR APT50M85LVR O-264 O-264 APT50M85 O-247 | |
APT6011B2VRContextual Info: B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6011B2VR APT6011LVR O-264 O-264 APT6011 O-247 APT6011B2VR | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 | |
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Contextual Info: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247 | |
APT12060B2VR
Abstract: APT12060LVR
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APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247 APT12060B2VR APT12060LVR | |
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Contextual Info: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 | |
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Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 | |
ED 58AContextual Info: B2VR APT50M80LVR 500V 58A 0.080W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT50M80B2VR APT50M80LVR O-264 O-264 APT50M80 O-247 ED 58A | |
050590
Abstract: APT10040B2VR APT10040LVR
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APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 050590 APT10040B2VR APT10040LVR | |
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Contextual Info: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 | |
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Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247 | |
MAX1370
Abstract: APT10M09LVR
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APT10M09B2VR APT10M09LVR O-264 O-264 APT10M09 O-247 MAX1370 APT10M09LVR | |
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Contextual Info: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247 | |
A20M18LVR
Abstract: APT20M18B2VR
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APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247 A20M18LVR | |
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Contextual Info: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 | |
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Contextual Info: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247 | |