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    B21 DIODE Search Results

    B21 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    B21 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S1 DIODE

    Abstract: Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1
    Contextual Info: Silicon Tuning Varactors ● Abrupt junction tuning diode ● Tuning range 120 V BBY 24 … BBY 27 Type Marking Ordering Code BBY 24-S1 Q62702-B20-S1 BBY 25-S1 Q62702-B21-S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1 P


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    24-S1 Q62702-B20-S1 25-S1 Q62702-B22-S1 27-S2 Q62702-B21-S1 26-S1 Q62702-B23-S2 CT120 S1 DIODE Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1 PDF

    Contextual Info: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope


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    BAV23S BAV23S PDF

    diode marking 226

    Abstract: DIODE B21 625 diode BY 225 diode philips bav23s L31 diode MBB057 marking RAV j353 diode BY 226
    Contextual Info: ^53^31 0024352 b21 M I A P X P h ilip s S e m ico n d uctors Product spe cification Silicon planar epitaxial high-speed diode N AMER DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope intended for surface mounting. The


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    BAV23S BAV23S 100hA diode marking 226 DIODE B21 625 diode BY 225 diode philips bav23s L31 diode MBB057 marking RAV j353 diode BY 226 PDF

    siemens 27 s1 diode

    Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
    Contextual Info: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1


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    24-S1 Q62702-B20-S1 25-S1 Q62702-B21 EHA07001 26-S1 Q62702-B22-S1 27-S2 Q62702-B23-S2 B235bOS siemens 27 s1 diode Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 3SB05 PDF

    Contextual Info: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state


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    32-Bit 34xvh 50MHz 80-pin QS34XVH245 QS34Xropagation MDSL-00273-03 PDF

    Power DIODE A30

    Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
    Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs


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    QS34XR245 32-Bit QS34XR245Q3 QS3R245 80-pin QS34XR245 MDSL-00253-02 Power DIODE A30 b12 diode DIODE B12 41 QS3R245 PDF

    diode b29

    Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
    Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND


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    QS34XVH245 32-Bit 150MHz 80-pin QS34XVH245 MDSL-00273-03 diode b29 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30 PDF

    Contextual Info: 1DI2OOK-O55 200a " £±' <* 7— )l : Outline D rawings - M.O-w 18.0 _ 2 ÌO . 20.0 . 27.0 POWER TRAN SISTO R MODULE ’ Features • High Voltage • 7 'J — V 's p y - f # — Kfài • A S O ^ /a I ' • Including Free W heeling Diode


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    1DI2OOK-O55 B22Hit E82988 I95T/R89) Shl50 PDF

    diode A23

    Abstract: QS3245 QS34X2245 QS34X245
    Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs


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    QS34X245, QS34X2245 32-Bit QS34X245 QS34X245 QS3245 QS34X2245 80-pin diode A23 QS3245 PDF

    Contextual Info: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc


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    IDTQS34X2245 32-BIT IDTQS34X2245 80-pin L0201-02, PDF

    DSAIH0002559

    Contextual Info: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


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    DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 DSAIH0002559 PDF

    Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions


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    IDTQS34XVH245 32-BIT IDTQS34XVH245 500MHz 80-Pin 34XVH245 PDF

    Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions


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    IDTQS34XVH2245 32-BIT IDTQS34XVH2245 80-Pin 34XVH2245 PDF

    Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions


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    IDTQS34XVH2245 32-BIT 80-Pin 34XVH2245 PDF

    Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA75AA100 E76102 100msec 00V-----IB, PDF

    RM3 transistors

    Abstract: B13 transistors
    Contextual Info: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10


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    B21oE2 B1oE20oE2 RM3 transistors B13 transistors PDF

    CA3049T

    Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
    Contextual Info: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent


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    CA3049, CA3102 500MHz 200MHz CA3049T CA3102 500MHz. ca3049 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8 PDF

    BU7988KVT

    Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
    Contextual Info: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V 500pcs 08T241A BU7988KVT DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15 PDF

    LED photo darlington transistor IC PACKAGE

    Abstract: PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 OC701
    Contextual Info: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic


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    QC701_ OC701 E86831 2424D OC701 2424o LED photo darlington transistor IC PACKAGE PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 PDF

    MG75G2YL1A

    Abstract: 1-B215
    Contextual Info: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)


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    MG75G2YL1A MG75G2YL1A 1-B215 PDF

    LED photo darlington transistor IC PACKAGE

    Abstract: OC70 PHOTO TRANSISTOR QC701 OC701 QC701-1 led 6pin LED PHOTO TRANSISTOR
    Contextual Info: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic


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    QC701_ OC701 E86831 2424D OC701 2424o LED photo darlington transistor IC PACKAGE OC70 PHOTO TRANSISTOR QC701 QC701-1 led 6pin LED PHOTO TRANSISTOR PDF

    Diode Mark ON B14

    Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
    Contextual Info: LVDS Interface ICs 56bit LVDS Receiver 8:56 DeSerializer BU7985KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7985KVT 150MHz 112MHz 180MHz) 20MHz 112MHz. TQFP100V 500pcs Diode Mark ON B14 Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package PDF

    diode td15

    Abstract: diode td13 DIODE B12 51 B12 68 diode
    Contextual Info: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V diode td15 diode td13 DIODE B12 51 B12 68 diode PDF

    schottky barrier diode b22

    Abstract: g17g diode td15
    Contextual Info: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number


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    56bit BU7988KVT 150MHz 112MHz 224MHz) TQFP100V R1010A schottky barrier diode b22 g17g diode td15 PDF