B21 DIODE Search Results
B21 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
B21 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
S1 DIODE
Abstract: Marking B23 Q62702-B20-S1 Q62702-B21-S1 Q62702-B22-S1 Q62702-B23-S2 marking 27 diode top marking S1
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24-s1q62702-b20-s125-s1q62702-b22-s1+9 | |
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Contextual Info: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope |
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bav23s | |
diode marking 226
Abstract: DIODE B21 625 diode BY 225 diode philips bav23s L31 diode MBB057 marking RAV j353 diode BY 226
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bav23s100hadiode marking 226diode b21+8 | |
siemens 27 s1 diode
Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
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24-s1q62702-b20-s125-s1q62702-b21+11 | |
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Contextual Info: S QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot SwaP Applications HotSwitch ductor Inc q s 34xvh 245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to Vcc - No DC path to Vcc or GND - 5V tolerant in OFF state |
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32-bit34xvh50mhz80-pin+3 | |
Power DIODE A30
Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
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qs34xr24532-bitqs34xr245q3qs3r245+5 | |
diode b29
Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
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qs34xvh24532-bit150mhz80-pin+9 | |
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Contextual Info: 1DI2OOK-O55 200a " £±' <* 7— )l : Outline D rawings - M.O-w 18.0 _ 2 ÌO . 20.0 . 27.0 POWER TRAN SISTO R MODULE ’ Features • High Voltage • 7 'J — V 's p y - f # — Kfài • A S O ^ /a I ' • Including Free W heeling Diode |
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1di2ook-o55b22hite82988i95t/r89+1 | |
diode A23
Abstract: QS3245 QS34X2245 QS34X245
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qs34x245qs34x224532-bitqs3245+2 | |
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Contextual Info: IDTQS34X2245 HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32-BIT MULTIWIDTH BUS SWITCHES FEATURES: • • • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc |
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idtqs34x224532-bit80-pinl0201-02 | |
DSAIH0002559Contextual Info: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic. |
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do-351n51941n5196do-213aa+4 | |
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Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions |
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idtqs34xvh24532-bit500mhz80-pin+1 | |
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Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions |
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idtqs34xvh224532-bit80-pin34xvh2245 | |
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Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions |
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idtqs34xvh224532-bit80-pin34xvh2245 | |
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Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated |
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qca75aa100e76102100msec00v-----ib | |
RM3 transistors
Abstract: B13 transistors
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b21oe2b1oe20oe2rm3 transistorsb13 transistors | |
CA3049T
Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
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ca3049ca3102500mhz200mhz+8 | |
BU7988KVT
Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
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56bitbu7988kvt150mhz112mhz+12 | |
LED photo darlington transistor IC PACKAGE
Abstract: PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 OC701
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qc701_oc701e868312424d+5 | |
MG75G2YL1A
Abstract: 1-B215
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mg75g2yl1a1-b215 | |
LED photo darlington transistor IC PACKAGE
Abstract: OC70 PHOTO TRANSISTOR QC701 OC701 QC701-1 led 6pin LED PHOTO TRANSISTOR
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qc701_oc701e868312424d+8 | |
Diode Mark ON B14
Abstract: Diode Mark B14 schottky barrier diode b22 BU7985KVT schottky B22 diode b27 BU7988 BU7988KVT TQFP100V TQFP100V Package
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56bitbu7985kvt150mhz112mhz+12 | |
diode td15
Abstract: diode td13 DIODE B12 51 B12 68 diode
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56bitbu7988kvt150mhz112mhz+6 | |
schottky barrier diode b22
Abstract: g17g diode td15
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56bitbu7988kvt150mhz112mhz+6 | |