B0A10 Search Results

b1a12

Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Contextual Info: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit

M390S3320DT1-C7A

Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range

M377S2953MT3

Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Contextual Info: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit

M390S3320DT1

Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous

PC133 registered reference design

Contextual Info: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

b1a12

Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
Contextual Info: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004

CDC2509

Abstract: Kingmax 256mb Kingmax Semiconductor MPIB63S-68KX3 PC133 registered reference design
Contextual Info: MPIB63S-68KX3 PC-133 256MB 168pin Registered SDRAM DIMM DESCRIPTION The MPIB63S-68KX3 is 32M bit x 72 Synchronous Dynamic RAM high density memory module. The MPIB63S-68KX3 consists of eighteen CMOS 16M x 8 bit with 4 banks Synchronous DRAMs in TinyBGA package, three 18-bits Drive

MA2180

Contextual Info: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The

SMT160

Contextual Info: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,

tc 97101

Abstract: D472
Contextual Info: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out

MT16C

Contextual Info: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

Contextual Info: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)

Contextual Info: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD

PC133 registered reference design

Contextual Info: M390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 PC133 Registered DIMM M390S3320BT1 M390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD

PC133 registered reference design

Contextual Info: PC133 Registered DIMM M390S3320ET1 M390S3320ET1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs FEATURE GENERAL DESCRIPTION The Samsung M390S3320ET1 is a 32M bit x 72 Synchronous •Performance range

2097152-BIT

Contextual Info: Preliminary Spec. MITSUBISHI LSIs MH2V72CZJ-6,-7 Some of contents are subject to change without notice. FAST PAGE MODE 150994944-BIT 2097152-BIT BY 72-BIT DINAMIC RAM PIN CONFIGURATION DESCRIPTION The MH2V72CZJ is 2097152-word x 72-bit dynamic ram module.

IC 7476 function

Contextual Info: ADVANCE I^ IIC R O N 4 MEG MT16D T 464 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-perform ance CM O S silicon-gate process

WT16LD

Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
Contextual Info: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,

Contextual Info: ADVANCE |U |IC R O N 4 MEG X MT24D T 472 72 DRAM MODULE 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-perform ance CM O S silicon-gate process

resistor 472g

Abstract: t18d mt180 MTT80 UT18D
Contextual Info: PRELIMINARY M IC R O N 1 M T18D T 172(S), M T18D(T)472 1 MEG, 4 MEG X 72 DRAM M ODULES DRAM 1 MEG, 4 MEG x 72 R J i n n i l l C 8, 32 MEGABYTE, ECC, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH IVIK J U U L. Cl FEATURES OPTIONS 168-Pin DIMM (DE-13) SOJ version

Contextual Info: PRELIMINARY MICRON 4 MEG DRAM MODULE X MT16LD464(X 64 DRAM MODULE 4 MEG x 64 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (DIMM) • H igh-perform ance CM OS silicon-gate process

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

B0411

Abstract: b0401
Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion