B052009 Search Results

siemens fet to92

Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Contextual Info: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

B052009

Contextual Info: Package Outline 3-Lead TO-39 Package Outline N2 ΦD ΦD1 Φa A β β Seating Plane 2 1 3 h 2 1 3 Φb α L j k Bottom View Symbol Dimension (inches) MIN NOM MAX α β 45O NOM 90O NOM Side View A Φa Φb ΦD ΦD1 h j k L .240 .190 .016 .350 .315 .009 .028

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure

2N6661

Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

125OC

Abstract: 2N6661
Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability

sivn

Abstract: VN2210 VN2210N2 VN2210N3-G jedec Package TO-39
Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

125OC

Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

DSPD-3TO39N2

Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

2206N2

Abstract: 125OC VP2206 VP2206N2
Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain

2206n2

Abstract: SIVP VP2206 VP2206N2 B06030
Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

DN5m

Contextual Info: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage These depletion-mode normally-on transistors utilize

2206N2

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain

125OC

Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Contextual Info: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

SIVN2210

Abstract: sivn 125OC VN2210 VN2210N2 VN2210N3-G
Contextual Info: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing