AX84 Search Results

MAX843

Contextual Info: 19-0388; Rev 0; 4/95 V M y J X IV M Low-Noise, Regulated, -2V GaAsFET Bias The AX840 offers both a -2V preset output and a -0.5V to -9.4V a d ju stab le output. The M AX843/M AX844 use an external positive control voltage to set the negative output voltage. Input voltage range for all the devices is

LCD inverter 94v 0

Abstract: transistor 1pv MAX843
Contextual Info: 19-0388; Rev 1;3/96 AMXIAI L o w -Noi se, R e g u l a t e d , -2V G a A s F E T B i a s The M AX840/M AX843/M AX844 low-noise, inverting charge-pum p power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V.

Contextual Info: 19- 1121; R e v 0 ; 9 /96 y id > j x iy M C o s t-S av in g M u ltic h e m is try B a tte ry -C h a rg e r S y s te m In its s im p le s t a p p lic a tio n , the M AX846A is a s ta n d ­ alone, current-lim ited float voltage source that charges L i-Io n ce lls. It can also be p a ire d up w ith a low -cost

pcmcia to usb

Abstract: 67dp AX84110 GP 841 Diode MC68K MCS-51
Contextual Info: AX84110 L Preliminary USB2.0 to Local CPU Bus controller Document No.: AX84110 / V0.0 / Dec. 16 ’02 Features: n n n n n n n Compliant with USB specification 1.0, 1.1 and 2.0 Support both 8 bit and 16 bit local CPU Interfaces include MCS-51 series, 80186 series, MC68K series

Contextual Info: PATENTED CONSTRUCTION # 5 ,6 5 6 ,9 8 5 - 0.300 n a x - 1 t n n fH 0 .0 2 5 0.015 PART HALO T G M -0 4 0 P 3 • 0.280 nax 0.37E D.C. — I : TG M -040P3 8PIN SMD TRANSFORMER FOR PCMCIA APPLICATIONS DESIGNED FOR MAXIM M AX845 y y y y 0,0 18 —-| |—

Contextual Info: 19-1095; Rev 2; 12/97 V k l v l X I V M 1-Cell to 3-Cell, H i g h - P o we r , L o w - N o i s e , St e p - U p DC-DC C o n v e r t e r s The AX848/AX849 boost converters set a new stan­ dard of high efficiency and high integration for noisesensitive power-supply applications, such as portable

Contextual Info: 19-1182; Rev 2; 12/98 jy\J Y X A J V \ Switch-Mode Lithium-Ion Battery-Charger Description T h e M A X 7 4 5 p r o v id e s a ll fu n c tio n s n e c e s s a ry fo r ch a rg in g lithium -ion b a tte ry pa cks. It p ro v id e s a re g u ­ lated c h a rg in g curre n t of up to 4 A w ith o u t g e ttin g hot,

EM1C

Abstract: IL63S j004
Contextual Info: 19-1349; R ev 1a; 10/98 J V Ji 1 X I V M 1-Cell, St ep - Up T wo- Way P a g e r S y s t e m 1C The AX847 is a complete power-supply and monitor­ ing system for two-way pagers or other low-power digi­ tal communications devices. It requires few external

DLN10

Abstract: DLN10C DLN10E jkoe
Contextual Info: KNo. N4729 SANYO -^ N O . 4729 1 21894 : VRM= 200-400V : Io = 1.0A 16 Jl 3e!t& Absol ute Maximum Ratings / Ta = 25°C Vrm Io Ifsm « JD 0 M [DLN10CI Ta = 25°C [DLNIOE] Ta = 25°C T€=137°C 50H ziE ?i^ IM fe'Jj& L r’M ^ A,sS-fS Tj Tstg DLN10C DLN10E 200

XB5AS8444

Abstract: Schneider electric XB5 AT8643M Schneider electric xb5 as8444 SCHNEIDER zb5 AZ102 XB5 AT42 AS8445 zb5 at4 AS142
Contextual Info: References 1 Control and signalling units Ø 22 1 Harmony XB5, plastic Assembly of other products using: Emergency stop devices body/contact assemblies: see page 36168-EN_ Conforming to EN/IEC 60204-1 and Ver4.1/2 EN/ISO 13850: 2006 and Machinery Directive 98/37/EC

MAX843

Contextual Info: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.

Contextual Info: 1 9-1095; R e v 1; 10/96 Æ i l X I A I f.Cell to 3-Cell, High-Power, Low-Noise , Step-Up DC-DC C onverters Synchronous rectifica tion provides a 5% efficie ncy improvement over similar nonsynchronous boost regu­ lators. In standby mode, pulse-skipping PFM operation

MAX1703EVKIT

Contextual Info: >M>JXiyki 19-1336; Rev 0; 1/98 1-Cell to 3-Cell, H i g h - P o w e r 1,5A , L o w - N o i s e , St e p - U p DC-DC C o n v e r t e r The MAX1703 is a high-efficiency, low-noise, step-up DC-DC converter intended for use in battery-powered wireless applications. It uses a synchronous-rectified

spw -049 transformer

Abstract: spw 049 transformer transfo Q1/spw 049 transformer MAX845
Contextual Info: 1 9 -03 72 : R ev 3 :8 / 9 6 y k i y j x i y i/ i I s o l a t e d T r a n s f o r m er D r i v e r for P C M C I A A p p l i c a t i o n s The AX845 consists of an oscillator followed by a to g ­ gle flip-flop. The flip-flop generates two 50% duty-cycle

a101 npn

Abstract: A101 C101 RA101S RC101S A101 PNP
Contextual Info: Ordering number:EN4776 PNP/NPN Epitaxial Planar Silicon Transistors RA101S/RC101S Switching Applications with Bias Resistances Features Package Dimensions • On-chip bias resistances (R1=47kΩ, R2=47kΩ). · Compact package (SPA). unit:mm 2033A [RA101S/RC101S]

Contextual Info: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264

Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 8/95 1 to 3-Cell', High-Power, Low-Noise, Step-Up DC-DC Converters _ G e n e ra l D escrip tio n The AX848/AX849 boost converters set a new stan­ dard of high efficiency and high integration for noisesensitive power-supply applications, such as portable

Contextual Info: * 70-7095/ Rev 1; 10/96 J V X J IX A J V Y 1-C ell to 3-C ell, High-Pow er, Low -N oise, Step-U p DC-DC C onverters The AX848/AX849 boost converters set a new stan­ dard o f high efficiency and high integration for noisesensitive pow er-supply applications, such as portable

sm74hc595

Abstract: SM 74hc04 74hc040 Design -5V dc power supply using center-tapped transformer 78l05 sot23 IC 78L05 measure current toroid MAX845ESA MAX845
Contextual Info: 19-0372; Rev 4; 10/97 > k l> J X I > k l e v a lu a tio n s a v a ila b le _ Description The AX845 provides an isolated power supply small enough to fit in thin PCMCIA cards and space-sensitive applications. It drives a low-profile center-tapped trans­ form er prim ary from a 5V or 3.3V DC power supply. The

DLN10

Abstract: DLN10C DLN10E
Contextual Info: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264

DLN10

Abstract: DLN10C DLN10E AX-8450 EN4729 AX84
Contextual Info: Ordering number: EN 47 2 9 Features •Fast reverse recovery time,small switching loss. • Peak reverse voltage : Vrm —200 to 400V. • Average rectified current : Io = 1.0A DLN10C DLN10E A bsolute Maximum Ratings at Ta =:25°C 200 400 Peak Reverse Voltage

SK100 transistor

Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
Contextual Info: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14