DLN10E Search Results

DLN10

Abstract: DLN10C DLN10E jkoe
Contextual Info: KNo. N4729 SANYO -^ N O . 4729 1 21894 : VRM= 200-400V : Io = 1.0A 16 Jl 3e!t& Absol ute Maximum Ratings / Ta = 25°C Vrm Io Ifsm « JD 0 M [DLN10CI Ta = 25°C [DLNIOE] Ta = 25°C T€=137°C 50H ziE ?i^ IM fe'Jj& L r’M ^ A,sS-fS Tj Tstg DLN10C DLN10E 200

DLN10

Abstract: DLN10C DLN10E AX-8450 EN4729 AX84
Contextual Info: Ordering number: EN 47 2 9 Features •Fast reverse recovery time,small switching loss. • Peak reverse voltage : Vrm —200 to 400V. • Average rectified current : Io = 1.0A DLN10C DLN10E A bsolute Maximum Ratings at Ta =:25°C 200 400 Peak Reverse Voltage

DBB08G

Abstract: D0201AD DFJ106 SS2018 DLC20C sb30 09 SCHOTTKY BARRIER BRIDGE RECTIFIERS
Contextual Info: High-speed Rectifiers Super fast-recovery diodes v a i(v ) 10(A) me . 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C 0FE3ΠDFE30G Package type br(ns) 600 <00 too too too DO-41 SS, 5 mm pitch D 0 -15L DO-201AD Ultrahigh-speed Rectifiers (Low-loss diodes)

Contextual Info: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

DBF60B

Abstract: DBA40C DD50F oba3 DBB10C
Contextual Info: High-speed Rectifiers Super fast recovery diodes Vrm 00 400 »0 10 » . OFJIOC DFJ10G 100 DO-41 SS 5 r m 15 DFD15C DFD15E DFD15G 100 DO-15L 3.0 DFE30C DFE30E DFE30G 100 00-201 AD 1.0 .DFJ1DE. " Package type

DLN10

Abstract: DLN10C DLN10E
Contextual Info: Ordering number:EN4729 DLN10 Silicon Diffused Junction Type Low-loss Rectifier Features Package Dimensions • Fast reverse recovery time, small switching loss. · Peak reverse voltage : VRM=200 to 400V. · Average rectified current : IO=1.0A. unit:mm 1264

DFJ10E

Abstract: DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS
Contextual Info: High-speed Rectifiers Super fast-recovery diodes V rm (V) lo (A) 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C DFE30E DFE30G Package type trr (ns} 600 200 100 y - .il DO-41 SS, 5 mm pitch 100 DO-15L 100 DO-201 AD Very High-speed Rectifiers (Low-loss diodes)