AX 3005 Search Results

Contextual Info: LOW-IMOISE/HIGHER POWER AFD AMPLIFIERS G A IN N O IS E VSWR VSWR OUTPUT POWER N O M . DC MODEL RANGE G A IN FLATNESS FIG U R E IN P U T OUTPUT NUMBER GHz Id B . M i n . ) (dB. M a x.) (dB . M ax ) (M ax.) ( Ma x . ) '<? 1 d B C O M P i d B m . Mi n ) ( + 15 V. m A )

BSY84

Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
Contextual Info: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V

toshiba 2sa965 audio power amplifier

Abstract: 2SA965 2SC2235
Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: SAMSUNG ELE CTRONICS INC 42E D MPSA05 • T'ibMlMS GOO'iDSb b ■ SMGK NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto = 60 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Characteristic

609 transistor

Abstract: KSP62 KSP63 KSP64 S-05
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V CEs = KSP62: 20V KSP63/64: 30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit K SP62

Contextual Info: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emltter Voltage: V cto= 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO -6 0 -4 0 -5 -600 625

Andrew RADIAx

Abstract: Andrew RADIAX RXL-4 Andrew RADIATING Andrew Rxl4
Contextual Info: Alpha-Numeric Type Number Identification RCT Radiating Mode Series RADIAX Cables RADIAX® cables are identified by an alpha-numeric type numbering system as described below. Example: RCT 5 LTC • 1. RN Indicates the level of fire retardancy Options: AX

BFY70

Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax

MR3006

Abstract: MR3001 MR3002 MR3003 MR3004 MR3005 MR3007
Contextual Info: Ini HR-3 M R 3001 thru IMR3007 MicrosemiCorp. 3A FAST RECOVERY RECTIFIERS FEATURES • » • • • • Low cost. High current capability. Low leakage. Low forward voltage. High surge capability. J E D E C DO-27 molded plastic case. 0.048 MIN 0 052 M AX

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ces = K S P 6 2 : 2 0 V KSP63/64: 30V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic

Contextual Info: QUADRAPHASE MODULATORS Frequency Range (MHz Insertion Loss (dB) m ax. 1 dB Comp. Pt. (dBm) min. Am plitude Balance (dB) max. Phase Balance (Deg) max. 10.2-11.3 20.3-22.4 7.0 7.0 +4 +4 0.4 0.4 2.0 2.0 1.50:1 1.50:1 100-120 133-147 190-210 220-260 7.0 7.0

3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

LR19980

Abstract: molex 5259
Contextual Info: /T v m o le x 2.5 4m m .1 0 0 " Pitch C-Grid SL Features and Benefits m Sizes 4 to 25 circuits Voltage: 250V • Larger pocket accepts interim clip with end-to-end stacked Current: 3 .0A connectors Contact Resistance: 1 5m£2 m ax. Electrical W ire-to-Board

transistor 2sC2235

Contextual Info: T O SH IB A 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 AUDIO POWER AMPLIFIER APPLICATIONS. U n it in mm 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. C om plem entary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) c h a r a c t e r is t ic

transistor IR 652 P

Contextual Info: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage

Tag 676 800

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •

toshiba P

Abstract: 50Q2YS50
Contextual Info: TOSHIBA M G I 50Q2YS5Q TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT MG 150Q2YS50 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm M O TO R CONTROL APPLICATIONS 4 -FA ST -O N -T A B # 110 • • H igh Input Impedance High Speed : tf=0.3,us M ax. @ Inductive Load

MG100N2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100N2YS1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input I m p e d a n c e . High Speed : tf =1. Olds M a x . } crr = ^* C-ax. . L o w S a t u r at ion V o l t.age : V ^ £ (sat )” ^ • ^ (Max •)

180 ria 120

Contextual Info: Technical Specifications ELCO Technical Data B a s ic g rid 100 2 54 x 1 0 0 (2 ,5 4 ) In s e r tio n F o rc e Series 8251 8352 8275 8281 8381 1 -6 oz per c o n ta c t W ith d r a w a l fo rc e 75 oz mm. per c o n ta c t C o n ta c t re s is ta n c e 12 m illo h m s m ax for gold plating

Contextual Info: B J I 57F -2 C S l B A S I C PART N U M B E R NUMBER OF HOLES— 4. FEM AL E S U B M IN A T U R E C O N C E N T R IC T W I N A X / T R I AX SOL D ER POT 2 & 4 HOLE FLANGE MOUNT B U L K H E A D JACK 3. SOLDER POT A C C E P T S . 0 2 6 D I A CONDUCTOR 2 . MAX PA N EL TH K . 1 8 7

SD-130055-016

Contextual Info: 13 10 12 DRAIN WIRE LO CATION .00 14 U N -2A 1.96 REF 49 .78 23.11 REF 1.29 HEX 3 2 7 7 REF P A N E L CUT OUT P A N E L TH K: .125 N A X. W /G A S K E T .187 M AX. W /O U T G A S K E T .062 MIN. .33 REF 8.32 N O TES: 1 M A T E R IA L: S E E T A B L E 2) FIN ISH ES: S E E T A B L E

Contextual Info: D R A W I N G No.: Customer Information Sheet I I S H E E T 2 OF 2 I M 2 2 - 6 0 I 3005 IF IN D O U B T - ASK NOT T O S C A L E | THIRD ANGLE PROJECTION I. A LL •58.00- T <>-<M M M M M M M M M M M M M > 6.00 _L T' 2.00 4.00 -1 H h*-00 00.90 P IN No. I P IN No.

current to voltage converter using 741

Abstract: ZN425 ZN424 ZN425E8 ZN424P ZN425E-8 ramp generator 555 ZN425E 6 bit r2r ladder 741 as buffer amplifier
Contextual Info: i E C S E M I p l e s s e m - W - y C~~Ò N D U C T O R~~S~| 3005-1.0 ZN425E8 8-BIT D-A/A-D CONVERTER The ZN425 is a monolithic 8-bit D-A converter containing n R-2R ladder network of diffused resistors with precision ipolar switches, and in addition a counter and a 2.5V

OPTO 22 g4idc5

Abstract: idc32 SNAP-AITM-I g4ior G4ad7 ODC5 opto22 B3000 G4IAC5 SNAP-SCM-485-422 G4-DA5
Contextual Info: FM Approved Products Introduction This document is a list of Opto 22 part numbers that have the Factory Mutual FM approval. All parts listed in this document meet the requirements for use in a Class I, Division 2 area without external intrinsic safety barriers.