D02S3 Search Results

ADC7802

Contextual Info: For I m e M e M i m e , M a d M Local Salesperson Autocalibrating, 4-Channel, 12-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • LOW POWER: 10mW plus Power Down • SIGNAL-TO- NOISE + DISTORTION RATIO OVER TEMPERATURE: 69dB min with fM = 1kHz 66dB min with fM = 50kHz

Contextual Info: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR • Collector-Emltter Voltage: V cto= 40V • Collector Dissipation: Pc m ax =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO -6 0 -4 0 -5 -600 625

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

M37204M8

Abstract: EPROM 2532A M37204MC-XXXSP M37204MC M37204EC-XXXSP M37204ECSP 10B716 m37204mcxxxsp M37204M8XXXSP M37204
Contextual Info: MITSUBISHI MICROCOMPUTERS M37204MC-XXXSP M37204EC-XXXSP, M37204ECSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER _ and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION PIN CONFIÖURATION TOP VIEW The M37204MC-XXXSP is a single-chip microcomputer designed with

Contextual Info: MITSUBISHI LS Is M 5 M 4 V 4 2 6 0 J ,T P ,R T -6 ,-7 ,-8 ,-6 S ,-7 S ,-8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily of 2 6 2 1 4 4 -w o rd by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

Contextual Info: CMOS STATIC RAM 256K 32 K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.) — Commercial: 20/25/35/45ns (max.) Low Power only. • Low-power operation

Contextual Info: MITSUBISHI LS Is M 5 M 4 V 4 1 6 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

Contextual Info: TOSHIBA UC/UP 54E » • 'ìOTTEH'ì 00223^7 353 « T O S S TOSHIBA TMPZ84C112A TMPZ84C112AN-6 / AF-6 1. OUTLINE AND FEATURES T h e T M PZ 84C 112A is a h ig h -p e rfo rm a n ce , low p o w er c o n su m p tio n 8 -b it m icrocomputer created w ith Toshiba CMOS silicon technology.

Contextual Info: HN62438 Series P re lim in ary 8M 512K x 16-bit and (1M x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62438 Series is an 8-Megabit CMOS Mask Programmable Read Only Memory organized either as 524,288 x 16-bit or as 1,048,576 x 8-bit. The high density and high speed access provide enough capacity

Contextual Info: ASSP SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switch­

Contextual Info: TO 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE TC514400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

M37267M6-XXXSP

Abstract: M37207EFXXXSP
Contextual Info: MITSUBISHI MICROCOMPUTERS M37207MF-XXXSP/FP M37207EF-XXXSP/FP, M37207EFSP/FP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION • Multi-master l2C-BUS inte rface.1 3 systems

Contextual Info: w GEC PLESSEY S E M I C O N D U C T O R S MV1821 VIDEO CASSETTE RECORDER PDC AND VPS INTERFACE CIRCUIT Supersedes version in April 1994 Consumer 1C Handbook, HB3120-2.0 The MV1821 is a member of the Enhanced Video Automation (EVA) family for receiving Programme Delivery

tc 97101

Contextual Info: ADVANCE MICRON I rtCHNCLOG * INC M714LD T 164 B(N), MT8LD264 B(N), MT16LD464 B(N) 1 , 2 , 4 MEG X 64 BURST EDO DRAM MODULES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES • 168-pin, dual-in-line m em ory m od u e (DIM M )