AVAILABLE111 Search Results

Contextual Info: WO* H EW L E T T WFKÆ PA CK ARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Tape-and-Reel Packaging Option Available111 The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f M A X , silicon bipolar MMIC process

MSA-050

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Q. Gain Block • High Output Power: 18.0 dBm Typical Pi ^ at 1.0 GHz • Low Distortion: 29.0 dBm Typical IP3at 1.0 GHz

ATF-21186

Abstract: ATF21186 at 21186
Contextual Info: What H E W L E T T mi!KM P A C K A R D 0.5 to 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 85 m il P lastic Surface Mount Package Features • Low Noise Figure: 0.6 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. PldB @2 GHz • High MSG:

A03 MMIC

Abstract: MMIC marking code S2 MMIC Amplifier A03 MMIC marking CODE 06
Contextual Info: What mLliM HEWLETT* PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical Px dI! at -1.0 GHz • Unconditionally Stable

Contextual Info: That EC W ER TD T m LïiMH PA KLA Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0311 Features Description • Cascadable 50 Q Gain Block The MSA-0311 is a low co st silicon bipolar M onolithic M icrowave Integrated Circuit MMIC housed in the surface m ount plastic

Contextual Info: m HEWLETT PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features Description • High Dynamic Range Cascadable 50 £2 or 75 Q Gain Block • 3 IB Bandwidth: The MSA-1105 is a high perfor­ mance silicon bipolar Monolithic

Contextual Info: What H E W LE T T « mifíM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 F eatu res D escription • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features D escription • Usable Gain to 5.5 GHz • High Gain: The MSA-0886 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

MMIC A06

Abstract: a06 mmic MSA-0611-BLK
Contextual Info: What HEW LETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.7 GHz • High Gain: 18.0 dB Typical at 0.5 GHz • Low Noise Figure: 3. OdB Typical at 0.5 GHz

STR 6458

Contextual Info: What H E W L E T T mLUM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features • High Dynamic Range Cascadable 50 £2 or 75 il Gain Block • 3 dB Bandwidth: 50 MHz to 1.3 GHz • 17.5 dBm Typical Px ¿a at 0.5 GHz • 3.6 dB Typical Noise Figure

IK-120

Contextual Info: fT Jf HEWLETT •321 PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical P t dB at -1 .0 GHz • Unconditionally Stable

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

Contextual Info: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

Contextual Info: What mL'flMPHEWLETT ACKARD Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-2111 F eatures Description • Cascadable 50 Q Gain Block The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a surface mount plastic

Contextual Info: Thal H EW LETT mi’nM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features Description • Cascadable 50 Q Gain Block The MSA-0786 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

MSA-0886

Abstract: MSA0886-BLK
Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features Description • Usable Gain to 5.5 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0286 Features D escription • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.5 GHz The MSA-0286 is a high perfor­ mance silicon bipolar Monolithic

Contextual Info: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit

Contextual Info: fX 3 1 HEWLETT* wLUM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0711 Features • Cascadable 50 £2 Gain Block • 3 dB Bandwidth: DC to 1.9 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l • Low Cost Surface Mount

Contextual Info: Thal H EW LETT* mLrJk PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0386 Features Description • Cascadable 50 Q Gain Block The MSA-0386 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

Contextual Info: What HEW LETT* mLliM P A C K A R D 2 -1 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features Description • Low Noise Figure: 1.4 1RTypical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P| dB at

Contextual Info: What H E W L E T T * mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features Cascadable 50 Q. Gain Block 3 dB Bandwidth: DC to 3.2 GHz 8 dB Typical Gain at 1.0 GHz 12.5 dBm Typical PxdI! at 1.0 GHz Unconditionally Stable k > l

ATF13736

Contextual Info: mLliM PACKARD What H E W L E T T * 2 -1 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low Noise Figure: 1.8 dB Typical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dB Typical at 12 GHz