AVAGO MOUNTED AMPLIFIERS Search Results

Contextual Info: Avago HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 µm (117.3 x 30.3 mils) Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75µm (2.95 x 2.95 mils), or larger

color filter photodiode

Abstract: Photodiode as light sensor tray 12X12 green light photodiode sensor
Contextual Info: HDJD-S831-QT000 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

U1 78L05

Abstract: HPCL-7820 schematic induction heating circuit HCPL-7820 1.5 hp DC motor speed control using pwm hcpl-78 series hp 7820 schematic diagram of induction heating inverter 1 HP SINGLE PHASE induction motor wiring diagram shunt resistor current motor
Contextual Info: Designing with Avago Technologies Isolation Amplifiers Application Note 1078 Introduction One of the more difficult problems that designers may face is trying to isolate precision analog signals in an extremely noisy environment. A good example is monitoring the motor phase current in a high- performance

diagram ic A 7800A

Abstract: Resistors iwaki iwaki resistor A 7800A HCPL-7510 7800a avago hcpl so16 power transistor Gate Drive iwaki "Isolation Amplifiers"
Contextual Info: Isolation Amplifiers and Hall-Effect Device For Motor Control Current Sensing Applications Application Note 5121 Introduction A current sensor is an essential component in a motor control system. Recent progress in sensor technology has improved the accuracy and reliability of current sensors,

ckt of band reject filter

Abstract: AVANTEK AN-S003 AN-S005 Lumped Resonator Oscillator w17 transistor RLC bandstop filter design Avantek rf OSCILLATORS dielectric resonator avantek waveguide Avantek mixer
Contextual Info: Using Avago Technologies MSA Series MMIC Amplifiers as Frequency Converters Application Note S005 Introduction Vcc The monolithic microwave integrated circuit MMIC used in the frequency converter consists of a silicon bipolar Darlington pair with associated bias resistors. It is

Traveling Wave Amplifier

Contextual Info: HMMC-5021 2–22 GHz , HMMC-5026 (2–26.5 GHz) GaAs MMIC Traveling Wave Amplifiers Data Sheet Chip Size: 2980 x 770 m (117.3 x 30.3 mils) Chip Size Tolerance: ±10 m (±0.4 mils) Chip Thickness: 127 ± 15 m (5.0 ± 0.6 mils) Pad Dimensions: 75 x 75m (2.95 x 2.95 mils), or larger

HDJD-S833-QT333

Abstract: PHOTODIODE 4 CHANNEL ARRAY Photodiode-Array QFN-16 resistor table lp622 Capacitor Selection Guide Photodiode as color light sensor with color filters color filter photodiode
Contextual Info: HDJD-S833-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

Contextual Info: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

630-819

Abstract: ATF-511P8 0402CG189C9B200 0402CG100J9B200 BCV62B LL1005-FH1N0S MGA-53543 ML200D 630802 AN1327
Contextual Info: ATF-511P8 1900 MHz High Linearity Amplifier Application Note 1327 Introduction Avago Technologies ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41.3 dBm and a 1 dB compression point of 26 dBm, the ATF-511P8 is well suited as a base station

HDJD-S831-QT333

Abstract: 90 nm CMOS Photodiode-Array QFN-16 Photodiode as light sensor
Contextual Info: HDJD-S831-QT333 Color Sensor Module Data Sheet Description Avago Color Sensor is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three trans-impedance amplifiers in a single monolithic

AV02-0626EN

Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Contextual Info: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based

VMMK-2303

Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Contextual Info: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and

transistor c815

Abstract: ATF-511P8 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm
Contextual Info: ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago’s ATF-511P8 is an ­ enhancement mode PHEMT ­designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well suited as a base

CHB capacitor Series

Abstract: ATF-521P8 BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D ATF-511P8
Contextual Info: ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Avago’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is

ATF-501P8

Abstract: R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM
Contextual Info: ATF-501P8 1900MHz High Linearity Amplifier Application Note 5021 Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited as a base station transmit

acmd-7605

Abstract: AFEM 7813 ACPM-7381 ACMD-7612 Tower Mounted Amplifiers Dual Band wifi 5 watt amplifier circuit ACFM-7104 ALM-1412 ALM-2812 MGA-61563
Contextual Info: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in

LL1608-FS47NJ

Abstract: GSM450 ATF-501P8 ATF-54143 application notes 250R07C120JV4 BCV62B CDMA450 ML200D LL1005-FH18NJ 350LFM
Contextual Info: ATF-501P8 450 MHz High Linearity Amplifier Application Note 5058 ATF-501P8 Applications Information Description Avago Technologies ATF- 501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. This application note covers

circuit diagram of hearing aid using transistors

Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
Contextual Info: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a

wifi 5 watt amplifier circuit

Abstract: MGA-30489 MGA-30689 30689 ALM-1812 VMMK-1225 ACPM 5040 ACMD-7402 mga-62563 ALM-80110
Contextual Info: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in

RO4350

Abstract: MGA-30316 edge mount sma connector ALM-32120 WiMAX RF Transceiver ALM-31322 ALM-32220 ALM-32320 MGA-30116 MGA-30216
Contextual Info: ALM-31322 1Watt, 3.3GHz to 3.9GHz Driver Amplifier Design for WiMax Base Transceiver Station Using Avago Technologies ALM-31322 Application Note 5403 Introduction Avago Technologies ALM-31322 is a 1W Power Amplifier PA with good OIP3 and PAE at 1dB Gain-Compression

fet amplifier schematic

Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Contextual Info: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application

LL1608-FSR15J

Abstract: MCR01J000 IIP31 ATF-531P8 Tower Mounted Amplifiers Schematic 0805ZC105KATZA 0402CG189C9B200 ATF-521P8 BCV62B 630-007
Contextual Info: ATF-531P8 1900 MHz High Linearity Amplifier Application Note 1320 Introduction Avago Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8

66MILS

Contextual Info: HMMC-5027 2–26.5 GHz Medium Power Amplifier Data Sheet Features • Wide-frequency range: 2 – 26.5 GHz • Moderate gain: 7 dB • Gain flatness: ± 1 dB Chip Size: 2980 x 770 µm 117.3 x 30.3 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness:

Contextual Info: Avago HMMC-5025 2 – 50 GHz Distributed Amplifier Data Sheet Features • Frequency range: 2 – 50 GHz • Small signal gain: 8.5 dB • P-1dB @ 40 GHz: 12 dBm Chip Size: 1720 x 920 µm 67.7 x 36.2 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: