AV 2.2 K 100 Search Results

FMUG2Y

Abstract: FMU-21S
Contextual Info: Package I F AV (A) Part Number IFSM (A) Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot –40 to +150 0.9 1.2 10 300 100 0.2 10/10 0.08 10/20 17 0.3 57 30 –40 to +150 0.95 1.5 10 300 100 0.2 10/10 0.08 10/20 15 0.4 58 RU 3YX 2.0 50 –40 to +150

Contextual Info: LT117AHV/LT317AHV _LM117HV/LM317HV KOTURCS • ■ ■ ■ ■ ■ 60V Operation Guaranteed 1% Output Voltage Tolerance Guaranteed max. 0.01%/V Line Regulation Guaranteed max. 0.3% Load Regulation Min. 1.5A Output Current 100% Burn-in in Thermal Overload

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

RN 3Z

Abstract: AP01C EG01C EP01C
Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

FMG-21S

Abstract: fmg22s FMG-22S FMG26S FMLG22 FMG36S FMG32S FML-33S FMG-11S FMG-12S
Contextual Info: SANKEN ELECTRIC CO LTD Bi 7 ^ 0 7 4 1 Ü0DDÔ1S ¡ S A K J ^ o ^ n V rm :100~600V Io: 5.0— 20A Electrical Characteristics Ta = 25”C Others BSE » Ultra Fast Recovery Diodes /FMI Type N a \ ^ FMG-11S, R FMG-12S, R FMG-13S, R FMG-14S, R FMG-21S, R FMG-22S, R

FMQ-G1FS

Abstract: FMP G2FS G2GS RU4DS
Contextual Info: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)

Contextual Info: TLC227xĆQ1, TLC227xAĆQ1 Advanced LinCMOS RAILĆTOĆRAIL OPERATIONAL AMPLIFIERS ąą SGLS007C − FEBRUARY 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D MIL-STD-883, Method 3015; Exceeds 100 V

EE 1605

Abstract: SE 470 UF
Contextual Info: Type AEB SMT Aluminum Electrolytic Capacitors - High Voltage, 105 °C Low Impedance and Long Life for High Voltage, High Ripple Current Applications AV –25 °C to +105 °C 160, 200, 250, 350, 400, 450 Vdc 2.2 µF to 100 µF ±20% @ 120 Hz and +20 °C Rated Voltage

TLC2274D

Abstract: TLC2272 TLC2274 TLC272 TLC274 TS272 TS274
Contextual Info: TLC227xĆQ1, TLC227xAĆQ1 Advanced LinCMOS RAILĆTOĆRAIL OPERATIONAL AMPLIFIERS ąą SGLS007C − FEBRUARY 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D MIL-STD-883, Method 3015; Exceeds 100 V

Contextual Info: I F AV (A) Part Number 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4

Contextual Info: BSC037N03LSC G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V R DS on ,max 3.7 mΩ ID 100 A • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Improved switching behaviour • Qualified according to JEDEC1) for target applications

BSC883N03MS

Abstract: 883N03MS
Contextual Info: BSC883N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 34 V V GS=10 V 3.8 mΩ V GS=4.5 V 4.6 ID

AG01Z

Abstract: AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

882N03MS

Abstract: 882N03
Contextual Info: BSC882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID

028N03L

Abstract: 028N03 BSC028N03LSC
Contextual Info: BSC028N03LSC G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V R DS on ,max 2.8 mΩ ID 100 A • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Improved switching behaviour • Qualified according to JEDEC1) for target applications

LM6181N

Abstract: SC 82011
Contextual Info: LM6181 N a t i o n a l S e m i c o n d u c t o r LM6181 100 mA, 100 MHz Current Feedback Amplifier General Description Features The LM6181 current-feedback amplifier offers an unparal­ leled combination of bandwidth, slew-rate, and output cur­ rent. The amplifier can directly drive up to 100 pF capacitive

884N03MS

Abstract: BSC884N03MS
Contextual Info: BSC884N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 4.5 mΩ V GS=4.5 V 5.4 ID

AYV8

Abstract: LM6181 out pin
Contextual Info: LM6181 National Semiconductor LM6181 100 mA, 100 MHz Current Feedback Amplifier General Description Features Typical unless otherwise noted The LM6181 current-feedback amplifier offers an unparal­ leled combination of bandwidth, slew-rate, and output cur­

Contextual Info: BSZ033N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL • Low FOMSW for High Frequency SMPS • 100% avalanche tested V DS R DS(on),max 30 V V GS=10 V 3.3 mΩ V GS=4.5 V 4.1

057n08ns

Abstract: 057N08N JESD22
Contextual Info: BSC057N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 5.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)

BSC028N06LS3

Abstract: BSC028N06 028n06ls PG-TDSON-8 IEC61249-2-21 JESD22
Contextual Info: BSC028N06LS3 G OptiMOS 3 Power-Transistor TM Product Summary Features • Ideal for high frequency switching and sync. rec. V DS 60 V • Optimized technology for DC/DC converters R DS on ,max 2.8 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)

119N03MS

Abstract: BSC119N03MSC 119n0 119N03
Contextual Info: BSC119N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V GS=10 V 11.9 V GS=4.5 V 13.9 ID • 100% Avalanche tested 39

Contextual Info: BSC049N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 4.9 mΩ V GS=4.5 V 6.4 ID • 100% avalanche tested