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    882N03MS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC882N03MSG

    Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics BSC882N03MSG 23,996 1
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    • 100 $0.61
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    Component Electronics, Inc BSC882N03MSG 40
    • 1 $0.77
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    • 100 $0.58
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    Infineon Technologies AG BSC882N03MSGATMA1

    MOSFET N-Channel 34V 22A (Ta), 100A (Tc) 8-SON T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BSC882N03MSGATMA1 35,000 1
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    • 100 $0.64
    • 1000 $0.53
    • 10000 $0.48
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    882N03MS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    882N03MS

    Abstract: 882N03 BSC882N03MSG bsc882n03
    Contextual Info: 882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID


    Original     		bsc882n03ms882n03ms882n03bsc882n03msg+1bsc882n03 PDF

    882N03MS

    Abstract: 882N03
    Contextual Info: 882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID


    Original     		bsc882n03msiec61249-2-21882n03ms882n03 PDF