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    028N06LS Search Results

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    028N06LS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC028N06LS3GATMA1

    MOSFET N-CH 60V 23A/100A TDSON
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    DigiKey BSC028N06LS3GATMA1 Reel 10,000 5,000
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    Avnet Americas () BSC028N06LS3GATMA1 Reel 10,000 26 Weeks 5,000
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    BSC028N06LS3GATMA1 Ammo Pack 1
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    Mouser Electronics BSC028N06LS3GATMA1 3,291
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    Newark () BSC028N06LS3GATMA1 Cut Tape 1,911 1
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    BSC028N06LS3GATMA1 Reel 5,000
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    Bristol Electronics () BSC028N06LS3GATMA1 3,356 3
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    BSC028N06LS3GATMA1 90 3
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    Rutronik BSC028N06LS3GATMA1 Reel 5,000 5,000
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    Chip 1 Exchange BSC028N06LS3GATMA1 434
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    Chip One Stop BSC028N06LS3GATMA1 Cut Tape 13,868 0 Weeks, 1 Days 1
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    EBV Elektronik BSC028N06LS3GATMA1 27 Weeks 5,000
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    IBS Electronics BSC028N06LS3GATMA1 5,000 5,000
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    Win Source Electronics BSC028N06LS3GATMA1 41,610
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    Infineon Technologies AG BSC028N06LS3 G

    MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC028N06LS3 G 44,700
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    Infineon Technologies AG BSC028N06LS3GATMA1.

    Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:139W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC028N06LS3GATMA1.
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    Newark BSC028N06LS3GATMA1. Reel 10,000 5,000
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    Infineon Technologies AG BSC028N06LS3G

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    Bristol Electronics () BSC028N06LS3G 2,895 3
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    BSC028N06LS3G 47 3
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    Win Source Electronics BSC028N06LS3G 45,000
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    Infineon Technologies AG BSC028N06LS3

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    Bristol Electronics BSC028N06LS3 307
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    028N06LS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    028n06ls

    Abstract: BSC028N06LS3 BSC028N06LS3 G JESD22
    Contextual Info: 028N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max 2.8 mΩ ID 100


    Original     		BSC028N06LS3 028N06LS 028n06ls BSC028N06LS3 G JESD22 PDF

    BSC028N06LS3

    Abstract: BSC028N06 028n06ls PG-TDSON-8 IEC61249-2-21 JESD22
    Contextual Info: 028N06LS3 G OptiMOS 3 Power-Transistor TM Product Summary Features • Ideal for high frequency switching and sync. rec. V DS 60 V • Optimized technology for DC/DC converters R DS on ,max 2.8 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC028N06LS3 IEC61249-2-21 028N06LS BSC028N06 028n06ls PG-TDSON-8 IEC61249-2-21 JESD22 PDF