ATLE Search Results

Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

MST206N

Abstract: at1d-2m3 MST106D H5F3 AT2N MST306D MST206PA AT1D-6M3 8A102 8A2011
Contextual Info: S ATE/ATLE 44 type M T 7 .$ 7 > ^ - K / d BS Standard/Lever-lock Toggle Switches ft • l. 1. High contact reliab ility is assured with the adoption of a clip mechanism. 2. Immersion cleaning is possible.

PKB20010U

Contextual Info: J_L N AtlER PHILIPS/DISCRETE QbE D • bbS3TBl DDlSOfl? 3 ■ “ II PKB 20010U MAINTENANCE TYPE _ /V T -33-01 MICROWAVE POWER TRANSISTOR N-P-N silicon transistor fo r use in space, m ilitary and professional applications. It •

Contextual Info: b b S B ^ l 0024515 51b « A P X N AtlER PHILIPS/DISCRETE b7E BCF81 V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended fo r low level, low noise general purpose applications in thick and thin-film circuits.

ASM161TEUSf

Abstract: ASM161 4-SOT143 431 marking code sot
Contextual Info: ASM161/ASM162 April 2008 rev 1.5 µP Supervisory Circuit General Description Reset Threshold The ASM161 and ASM162 are cost effective, low power Part Suffix Voltage V L 4.63 M 4.38 reset is asserted and remains asserted for atleast 800ms J 4.00 after VCC has risen above the reset threshold. An

ca3089

Abstract: sfg-10.7ma SFG10 capacitor 220 microfarad capacitor NCE fm am 46 74t CA3089 equivalent itt capacitors
Contextual Info: S ig n e tic s Integrated Circuits— Radio Circuits CA3089 Cont. T YPIC A L FM T U N ER With a single-tuned detector coil 1 NOTES Ail resistors values are typical and m ohms 1 Walk ' 4SN3FIC or equivalent 2 Murate SFG 10 7mA or equivalent 3 Rs will atlect stability depending on circuit layout

68c DIODE

Contextual Info: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

Contextual Info: N AtlER P H I L I P S / DI S C R E T E ObE.D • bb53^31 U □□ISIS? □ ■ PZ1418B15U PZ1721B12U P Z2024B 10U l 77- 3 3 ' 0 7 M ICRO W AVE POWER TR AN SISTO RS FOR BR O AD BAN D A M P LIFIE R S N-P-N transistors for use in common-base, class-B, wideband amplifiers under c.w. conditions in

28C020

Abstract: ii777
Contextual Info: J 2 Megabit Module XM28C020 ü s o r 256K x 8 Bit 5 Volt, Byte Atlerable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The XM28C020 is a high density 2 Megabit E2PROM comprised of fourX28C513 LCCs mounted on aco-fired multilayered ceramic substrate. Individual components

Contextual Info: N AtlER P H I L I P S / D I S C R E T E SSE D • b b S B IB l 001^337 1 ■ Surface Mount Devices GENERAL PURPOSE TRANSISTORS, PNP TYPE PACKAGE RATINGS hpe VCEO V VCBO V min/max. at Iq A/c e mA/V mA VCE sat max. atfc/lQ V mA/mA ' H typ mh2 , PINOUT ; SEE 7

BGY45B

Contextual Info: N AtlER PH IL I P S / D I S C R E T E i 860 8 1034 ObFT • bbS3^3l" O O l ^ s " T DT ‘-7 * y ^ o f-C > / BGY45B _/ V V.H.F. BROADBAND POWER MODULE V.H.F. broadband power amplifier module prim arily designed for mobile communications equipment,

M 3872

Abstract: X28C513 XM28C020 XM28C020-20 XM28C020I XM28C020M 3872
Contextual Info: Advance Information 2 Megabit Module XM28C020 256K x 8 Bit 5 Volt, Byte Atlerable E2PROM T Y P IC A L F E A T U R E S D E S C R IP T IO N • • • • The XM28C020 is a high density 2 Megabit E2PROM comprised of four X28C513 64K x 8 LCCs mounted on a co-fired multilayered ceramic substrate. Individual

28C020

Contextual Info: Advance Information 2 Megabit Module XM28C020 256K x 8 Bit 5 Volt, Byte Atlerable E2PROM D E S C R IP T IO N T Y P IC A L F E A T U R E S • • • • • • • • • High Density 2 Megabit 256K x 8 Module Access Time of 200ns at -5 5 °C to +125°C

Contextual Info: BYX99 SERIES - 25E D N AtlER P H I L I P S / D I S C R E T E B bbSBRBI 0055ab5 5 B T-ghiy RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX99-300 to 1200.

smps29

Contextual Info: ii N AtlER PHILIPS/DISCRETE 5SE D • / bb53T31 0017310 1 MPS2907 MPS2907A l T '^ -1 5 S IL IC O N P L A N A R E P IT A X IA L T R A N S IS T O R PNP silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. NPN complement is MPS2222/MPS2222A.

transistor tt 2222

Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Contextual Info: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power

philips hybrid OM976

Abstract: OM976/1 bbS3T31 OM976 philips resistor MSA374
Contextual Info: N AtlER PHILIPS /D IS CR ET E b'lE • J> bhS3^31 00322b5 MIS « A P X Philips Semiconductors Preliminary specification Video output amplifier FEATURES OM976/1 PINNING • DC coupled video amplifier for cathode drive, with a positive-going video input. 1 input

PE10005

Abstract: PE30-24 UL1007 AWG#22
Contextual Info: PE Series • TOKO O V E R V IE W T he PE Series can be operated at line voltages 115 or 230VAC suitable for worldwide usage. Single output power ratings are 30, 50, and 100 watts with seven output voltages available. These units are available in three configurations namely, printed circuit board, open frame or enclosed.

MDT2012-CH1R0AN

Contextual Info: TPS61240, TPS61241 www.ti.com . SLVS806 – APRIL 2009 3.5-MHz High Efficiency Step-Up Converter

Contextual Info: intJ 82078 64 PIN CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER — Selectable Boot Drive — Standard IBM and ISO Format Features — Format with Write Command for High Performance in Mass Floppy Duplication • Small Footprint and Low Height Packages ■ Supports Standard 5.0V as well as Low

bt 135

Contextual Info: rEHEPATOPHblM TETPOfl ry-32B TETRODE TeHepaTopHbiti abo i/iho m n yn eB O M TeTpofl ry -32B npeflHa3HaHeH p,rm reHepMpoBaHMfl KOJie6aHMM m ycn- The ry-32b beam -pow er double tetrode is used as an oscillator and a pow er am plifier in RF equipm ent. JieHMfl MOIHHOCTM B paflM O TeXHKHeCK HX yCTpOMCTBaX.

RBS 6000 pin assignment serial cable

Abstract: sja2510 maxon EC-max SCR GATE DRIVER maxon dc motor 217-R LM 7804 K 9008 maxon modem maxon motor a max
Contextual Info: UM10316 LPC29xx User manual Rev. 01 — 22 May 2009 User manual Document information Info Content Keywords LPC2917/01; LPC2919/01; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; LPC2939 User Manual, ARM9, CAN, LIN, USB Abstract This document extends the LPC29xx data sheets with additional details to

PID code for DC Motor control lpc1768

Abstract: ARM LPC1768 assembly codes LPC1768 21041AA lpc1768 qei encoder language example sch 5127 RBS ericsson software UM10360 LT 5212 lpc23xx
Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 00.07 — 31 July 2009 R R R LPC17xx User manual D D D UM10360 D FT FT A A R R D D D R A FT D R A Document information