ATF10 Search Results

ANSALDO THYRISTOR

Abstract: ATF1047
Contextual Info: ANSALDO Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori FAST SWITCHING THYRISTOR ATF1047 FINAL SPECIFICATION Repetitive voltage up to

ATF1047

Abstract: ATF1047s
Contextual Info: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF1047 FINAL SPECIFICATION

ANSALDO THYRISTOR

Abstract: ATF1040
Contextual Info: ANSALDO Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori FAST SWITCHING THYRISTOR ATF1040 FINAL SPECIFICATION Repetitive voltage up to

ATF1040

Abstract: TO 48 THYRISTOR FAST SWITCHING
Contextual Info: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF1040 FINAL SPECIFICATION

ATF-10136

Abstract: gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its

gaas fet micro-X Package

Abstract: ATF-10236 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a

GHZ micro-X ceramic Package

Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

ATF-10100

Abstract: ATF-10100-GP3 ATF10100
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise

JEW 5-58

Contextual Info: A T F -10236 w arn H E W L E T T 1 "H M P A C K A R D 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 36 micro-X Package1 Low Noise Figure: 0.8 dB typical at 4 GHz Bias: Vos = 2V, I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz

ATF-10100

Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz

ATF-10136-TR1

Abstract: ATF-10136 ATF-10136-STR 36 Micro-X
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

Contextual Info: What mLliM HEWLETT* PACKARD 0.5-12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features • High Associated Gain: 13.0 dB Typical at 4 GHz • Low Bias: VDS = 2V,IDS=25 mA • High Output Power: 20.0 dBm typical PldB at 4 GHz • Low Noise Figure:

ATF-10736

Abstract: ATF-10736-STR ATF-10736-TR1 ATF10
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

Contextual Info: Low Noise Gallium Arsenide FET Reliability Data ATF-10XXX ATF-13XXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the

25C1815

Contextual Info: WhoI ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET H EW LETT WL'HM PACKARD Features • • • • Chip Outline Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: VDS = 2 V, IDS = 25 mA High Assosiated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical

W1A sot23 transistor

Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
Contextual Info: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.

S parameters for ATF 10136

Abstract: AVANTEK transistor Avantek atf-1323
Contextual Info: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz

AVANTEK transistor

Contextual Info: AVANTEK INC EOE D im iU L . avan tek data sheet OQObâMc? b ATF-10100 0.5-12 GHz Low Noise Gallium Arsenide FET October, 1989 C T31-2S Avantek Chip Outline Features • • • • Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 25 mA

Contextual Info: AVANTEK INC Ot.E D im n b t. OGGSibt. ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET 0AVANTEK Ö | T-31-25 Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

R68560P

Abstract: D718A Rockwell R68560 ats38 R68560 rockwell collins connector 608 AE442 4800Q modem v.32 25BIS
Contextual Info: o RC9696AC-E Modem Designer’s Guide Rockwell Table of Contents 1 2 3 4 S u m m a r y . 1 1.1 F e a tu re s . 1

KY 500 ATX

Abstract: rc144dpg rockwell l39
Contextual Info: RC144ACG Modem Designer’s Guide Preliminary Rockwell International Digital Communications Division 1993 Rockwell International All Rights Reserved Printed in U.S.A. Order No.1008 December 10,1993 RC144ACG Modem Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility