ATC1206 Search Results

CL21 105 j

Abstract: samsung CL21 CL31B104KB 1206B104K500NT ECJ3YB1H104K mch315c104kp ATC0805 ATC1206 ATC0402 CL21 B 474
Contextual Info: MULTILAYER CERAMIC CAPACITORS CROSS REFERENCE GUIDE NOVACAP Chi p Siz e - Q uick Re fer ence C hart 0402 0603 0805 1206 1210 1808 1812 1825 ATC ATC0402 ATC0603 ATC0805 ATC1206 ATC1210 AVX 0402 CAL CHIP JOHANSON MURATA NEW NIC 0805 1206 1210 1808 S41 R29 GRM42

mepco capacitor

Abstract: MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher
Contextual Info: Cross Reference - RCD Components Vendor RCD part# Description MIL TYPE ALLEN BRADLEY: 706A CL061 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706B CL062 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706E CL063 Conformal coated SIP networks

MSWSH-020-30

Abstract: C3156 VBT1-S5-S24-SMT-AFM C1156 20 GHz PIN diode 470 uF, 50V capacitor
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure applications. It is also suited for

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

bzx79c5v6

Abstract: zener diode 1w, 5v 2.1 ghz 4 WATTS 5v
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features A broadband, high linearity, medium power series shunt integrated switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TDSCDMA and other wireless infrastructure applications. It

Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other

Aeroflex ATC 600

Abstract: bzx79-b24 MSWSH-020-30
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other

ATC1206

Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

MSWSH

Abstract: MSWSH-020-30 SRF 3800 Power MOSFET A1708 KOA Chip Resistors Packaging PIN DIODE 10V 10mA SMT ATC1206 part 1 date sheet 2012 2N7002E BSS84LT1
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.25 dB typical up to 2.7 GHz • High Isolation 31 dB typical up to 2.7 GHz A broadband, high linearity, medium power shunt switch

Aeroflex ATC 600

Abstract: resistor rs 2W
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.25 dB typical up to 2.7 GHz • High Isolation 31 dB typical up to 2.7 GHz A broadband, high linearity, medium power shunt switch

A1708

Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

Contextual Info: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

CW20C104K

Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Contextual Info: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,