ATC0805 Search Results

CL21 105 j

Abstract: samsung CL21 CL31B104KB 1206B104K500NT ECJ3YB1H104K mch315c104kp ATC0805 ATC1206 ATC0402 CL21 B 474
Contextual Info: MULTILAYER CERAMIC CAPACITORS CROSS REFERENCE GUIDE NOVACAP Chi p Siz e - Q uick Re fer ence C hart 0402 0603 0805 1206 1210 1808 1812 1825 ATC ATC0402 ATC0603 ATC0805 ATC1206 ATC1210 AVX 0402 CAL CHIP JOHANSON MURATA NEW NIC 0805 1206 1210 1808 S41 R29 GRM42

mepco capacitor

Abstract: MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher
Contextual Info: Cross Reference - RCD Components Vendor RCD part# Description MIL TYPE ALLEN BRADLEY: 706A CL061 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706B CL062 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706E CL063 Conformal coated SIP networks

VBT1-S5-S12-SMT

Abstract: atc 1117 0-5 v to 4-20 ma converter
Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

MSWSE-040-10

Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

MSWSE-040-1

Abstract: R1751 BSS84LT1 SN74ACT14 20v atc 0603 capacitor 0401 resistor VBT1-S5-S12-SMT atc 1117
Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Description Features A broadband, high linearity, medium power series switch element in a 2.0 X 1.3 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure applications. It is also suited for

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

MSWSE-040-10

Abstract: A1708 VBT1-S5-S12-SMT 20v atc 0603 capacitor KOA Chip Resistors Packaging BSS84LT1 SN74ACT14 atc 1117 MSWSE
Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch

cl21b104kbne

Abstract: 08055C104KAT2A CL31 samsung capacitor CM21X7R104K50AT GMC04 SAMSUNG CL10 cl21b104kbn GMC21 PHYCOMP C1206 0805 X7R 104
Contextual Info: Multilayer Ceramic Chip Capacitor A KYOCERA GROUP COMPANY PART NUMBER CROSS REFERENCE GUIDE MLCC CROSS REFERENCE A KYOCERA GROUP COMPANY Chip Case Size / Style Cross Reference Chart AVX - 08055C104KAT2A 0805 5 C Size Voltage Dielectric AVX 104 K A T 2 Capacitance Tolerance Failure Rate Terminations

CW20C104K

Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Contextual Info: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,

102. 1kv

Abstract: CL31 samsung capacitor A-TC02 HEC capacitor ceramic C0805 102 1kv CL21 105 j 107 10V epcos C0805X474K050T CL21B474 MLCC X8R murata
Contextual Info: HOLYSTONE ENTERPRISE INC Surface mount MLCC Capacitor X-Reference Guide Chip Case Size/Style Cross Reference Chart HEC C0201 C0402 C0603 C0805 C1206 C1210 C1808 C1812 C1825 C2220 C2225 ATC ATC0201 ATC 0402 ATC 0603 ATC 0805 ATC 1206 ATC 1210 ATC 1808 ATC 1812 ATC 1825 ATC 2220 ATC 2225